{"paper":{"title":"Stark-tunable O-band single-photon sources based on deterministically fabricated quantum dot--circular Bragg gratings on silicon","license":"http://creativecommons.org/licenses/by/4.0/","headline":"Quantum dots grown directly on silicon and embedded in electrically contacted circular Bragg gratings achieve a 16 nm Stark shift at telecom O-band wavelengths while preserving high single-photon purity up to 77 K.","cross_cats":["cond-mat.mes-hall"],"primary_cat":"physics.optics","authors_text":"Alexander Kosarev, Imad Limame, Kartik Gaur, Kerstin Volz, Peter Ludewig, Priyabrata Mudi, Sarthak Tripathi, Stephan Reitzenstein","submitted_at":"2026-04-25T19:33:07Z","abstract_excerpt":"Semiconductor quantum dots (QDs) offer outstanding quantum-optical properties, making them highly attractive for quantum information technologies. However, combining wide-range electrical tunability, efficient photon extraction, elevated-temperature operation, monolithic silicon integration, and telecom-wavelength compatibility remains a major challenge. Here, we demonstrate electrically contacted circular Bragg grating (eCBG) resonators incorporating InGaAs QDs directly grown on silicon, enabling bright single-photon emission in the telecom O-band. Deterministic electron-beam lithography and "},"claims":{"count":4,"items":[{"kind":"strongest_claim","text":"The QD–eCBGs exhibit a quantum-confined Stark shift of approximately 16 nm (11 meV) at 4 K, representing a record for QDs embedded in nanophotonic structures at telecom wavelengths. This is achieved alongside a photon extraction efficiency of (21.7 ± 3.0)% into the first lens, while maintaining excellent radiative properties and high single-photon purity, with g^(2)(0)=0.0078 ± 0.0012 below saturation and g^(2)(0)=0.0183 ± 0.0021 at saturation under pulsed excitation. Robust antibunching persists up to 77 K.","source":"verdict.strongest_claim","status":"machine_extracted","claim_id":"C1","attestation":"unclaimed"},{"kind":"weakest_assumption","text":"That the deterministic electron-beam lithography, ridge-based vertical p-i-n diode architecture, and direct InGaAs QD growth on silicon do not introduce defects, non-radiative paths, or fabrication-induced strain that would degrade the reported extraction efficiency, single-photon purity, or Stark shift beyond the stated values.","source":"verdict.weakest_assumption","status":"machine_extracted","claim_id":"C2","attestation":"unclaimed"},{"kind":"one_line_summary","text":"Silicon-integrated InGaAs quantum dot single-photon sources in electrically contacted circular Bragg gratings demonstrate a record 16 nm quantum-confined Stark shift at O-band with high purity and operation up to 77 K.","source":"verdict.one_line_summary","status":"machine_extracted","claim_id":"C3","attestation":"unclaimed"},{"kind":"headline","text":"Quantum dots grown directly on silicon and embedded in electrically contacted circular Bragg gratings achieve a 16 nm Stark shift at telecom O-band wavelengths while preserving high single-photon purity up to 77 K.","source":"verdict.pith_extraction.headline","status":"machine_extracted","claim_id":"C4","attestation":"unclaimed"}],"snapshot_sha256":"9307bcf6db9a28be1a4da52cbaae198c857a60f600346ecb04b5aad4aaef2718"},"source":{"id":"2604.23422","kind":"arxiv","version":2},"verdict":{"id":"c86f0457-a322-4a27-828c-b11e3ba41be9","model_set":{"reader":"grok-4.3"},"created_at":"2026-05-08T07:32:29.774373Z","strongest_claim":"The QD–eCBGs exhibit a quantum-confined Stark shift of approximately 16 nm (11 meV) at 4 K, representing a record for QDs embedded in nanophotonic structures at telecom wavelengths. This is achieved alongside a photon extraction efficiency of (21.7 ± 3.0)% into the first lens, while maintaining excellent radiative properties and high single-photon purity, with g^(2)(0)=0.0078 ± 0.0012 below saturation and g^(2)(0)=0.0183 ± 0.0021 at saturation under pulsed excitation. Robust antibunching persists up to 77 K.","one_line_summary":"Silicon-integrated InGaAs quantum dot single-photon sources in electrically contacted circular Bragg gratings demonstrate a record 16 nm quantum-confined Stark shift at O-band with high purity and operation up to 77 K.","pipeline_version":"pith-pipeline@v0.9.0","weakest_assumption":"That the deterministic electron-beam lithography, ridge-based vertical p-i-n diode architecture, and direct InGaAs QD growth on silicon do not introduce defects, non-radiative paths, or fabrication-induced strain that would degrade the reported extraction efficiency, single-photon purity, or Stark shift beyond the stated values.","pith_extraction_headline":"Quantum dots grown directly on silicon and embedded in electrically contacted circular Bragg gratings achieve a 16 nm Stark shift at telecom O-band wavelengths while preserving high single-photon purity up to 77 K."},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/2604.23422/integrity.json","findings":[],"available":true,"detectors_run":[{"name":"ai_meta_artifact","ran_at":"2026-05-21T08:41:06.345580Z","status":"completed","version":"1.0.0","findings_count":0},{"name":"doi_compliance","ran_at":"2026-05-19T23:06:03.856217Z","status":"completed","version":"1.0.0","findings_count":0}],"snapshot_sha256":"4ccec1a85c6cfc6c7b009bdefb7f9d2b1cdff91197c5db13843922729aca52b4"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}