{"paper":{"title":"Study of two-subband population in Fe-doped AlxGa1-xN/GaN heterostructures by persistent photoconductivity effect","license":"","headline":"","cross_cats":["cond-mat.mes-hall"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Chun-Nan Chen, Ikai Lo, J.C. Chiang, J.K. Tsai, K.R. Wang, M.H. Gau, T. Aggerstam, W.T. Wang, Y.L. Chen, Z.J. Chang","submitted_at":"2006-09-15T01:52:35Z","abstract_excerpt":"The electronic properties of Fe-doped Al0.31Ga0.69N/GaN heterostructures have been studied by Shubnikov-de Haas measurement. Two subbands of the two-dimensional electron gas in the hetero-interface were populated. After the low temperature illumination, the electron density increases from 11.99 x 1012 cm-2 to 13.40 x 1012 cm-2 for the first subband and from 0.66 x 1012 cm-2 to 0.94 x 1012 cm-2 for the second subband. The persistent photoconductivity effect (~13% increase) is mostly attributed to the Fe-related deep-donor level in GaN layer. The second subband starts to populate when the first "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"cond-mat/0609360","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}