{"paper":{"title":"Gap states controlled transmission through 1D Metal-Nanotube junction","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"B. Karmakar, C.D. Mukherjee, D. Talukdar, K. K. Bardhan, P. Yotprayoonsak","submitted_at":"2014-04-27T09:30:23Z","abstract_excerpt":"Understanding the nature of metal/1D-semiconductor contacts such as metal/carbon nanotubes is a fundamental scientific and technological challenge for realizing high performance transistors\\cite{Francois,Franklin}. A Schottky Barrier(SB) is usually formed at the interface of the $2D$ metal electrode with the $1D$ semiconducting carbon nanotube. As yet, experimental\\cite{Appenzeller,Chen, Heinze, Derycke} and numerical \\cite{Leonard, Jimenez} studies have generally failed\\cite{Svensson} to come up with any functional relationship among the relevant variables affecting carrier transport across t"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1404.6730","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}