{"paper":{"title":"Cathodoluminescence as an Effective Probe of Carrier Transport and Deep Level Defects in Droop-Mitigating InGaN/GaN Quantum Well Heterostructures","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Akshay Singh, Andrew Armstrong, Eric A. Stach, Isaac Wildeson, Jordan Chesin, Kim Kisslinger, Parijat Deb, Rob Armitage, Silvija Grade\\v{c}ak, Zhibo Zhao","submitted_at":"2017-10-03T15:59:05Z","abstract_excerpt":"Commercial InGaN/GaN light emitting diode heterostructures continue to suffer from efficiency droop at high current densities. Droop mitigation strategies target Auger recombination and typically require structural and/or compositional changes within the multi-quantum well active region. However, these modifications are often accompanied by a corresponding degradation in material quality that decreases the expected gains in high-current external quantum efficiency. We study origins of these efficiency losses by correlating chip-level quantum efficiency measurements with structural and optical "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1710.01233","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}