{"paper":{"title":"Negative-U Centers as a Basis of Topological Edge Channels","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.supr-con"],"primary_cat":"cond-mat.mes-hall","authors_text":"Andrey Kudryavtsev, Anna Malyarenko, Eduard Danilovskii, Leonid Klyachkin, Nikolay Bagraev, Vladimir Mashkov, Wolfgang Gehlhoff","submitted_at":"2013-08-23T09:30:30Z","abstract_excerpt":"We present the findings of the studies of the silicon sandwich nanostructure that represents the high mobility ultra - narrow silicon quantum well of the p - type (Si - QW), 2 nm, confined by the delta - barriers, 3 nm, heavily doped with boron on the n - type Si (100) surface. The ESR studies show that nanostructured delta - barriers confining the Si - QW consist predominantly of the dipole negative - U centers of boron, which are caused by the reconstruction of the shallow boron acceptors along the <111> crystallographic axis, 2B(0) = B(+) + B(-). The electrically ordered chains of dipole ne"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1308.5078","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}