{"paper":{"title":"Probing defect states in few-layer MoS$_{2}$ by conductance fluctuation spectroscopy","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mtrl-sci","cond-mat.str-el"],"primary_cat":"cond-mat.mes-hall","authors_text":"Aveek bid, K. Lakshmi Ganapathi, Sangeneni Mohan, Suman Sarkar","submitted_at":"2019-07-03T10:12:19Z","abstract_excerpt":"Despite the concerted effort of several research groups, a detailed experimental account of defect dynamics in high-quality single- and few-layer transition metal dichalcogenides remain elusive. In this paper we report an experimental study of the temperature dependence of conductance and conductance-fluctuations on several few-layer MoS$_{2}$ exfoliated on hexagonal boron nitride and covered by a capping layer of high-$\\kappa$ dielectric HfO$_{2}$. The presence of the high-$\\kappa$ dielectric made the device extremely stable against environmental degradation as well as resistant to changes in"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1907.01830","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}