{"paper":{"title":"Isolated highly localized bands in $\\mathrm{YbI_2}$ monolayer caused by $4f$ orbitals","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"San-Dong Guo","submitted_at":"2018-03-21T16:06:59Z","abstract_excerpt":"The novel electronic structures can induce unique physical properties in two-dimensional (2D) materials. In this work, we report isolated highly localized bands in $\\mathrm{YbI_2}$ monolayer by the first-principle calculations within generalized gradient approximation (GGA) plus spin-orbit coupling (SOC). It is found that $\\mathrm{YbI_2}$ monolayer is an indirect-gap semiconductor using both GGA and GGA+SOC. The calculations reveal that Yb-$4f$ orbitals constitute isolated highly localized bands below the Fermi level at the absence of SOC, and the bands are split into the $j = 7/2$ and $j = 5/"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1803.07982","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}