{"paper":{"title":"Raman signatures of pressure induced electronic topological and structural transitions in Bi2Te3","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.other"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Achintya Bera, A. K. Sood, D. V. S. Muthu, Gopal K. Pradhan, Pradeep Kumar","submitted_at":"2011-11-27T18:06:08Z","abstract_excerpt":"We report Raman signatures of electronic topological transition (ETT) at 3.6 GPa and rhombohedral ({\\alpha}-Bi2Te3) to monoclinic ({\\beta}-Bi2Te3) structural transition at ~ 8 GPa. At the onset of ETT, a new Raman mode appears near 107 cm-1 which is dispersionless with pressure. The structural transition at ~ 8 GPa is marked by a change in pressure derivative of A1g and Eg mode frequencies as well as by appearance of new modes near 115 cm-1and 135 cm-1. The mode Gr\\\"uneisen parameters are determined in both the {\\alpha} and {\\beta}-phases."},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1111.6284","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}