{"paper":{"title":"Strain engineering of Schottky barriers in single- and few-layer MoS2 vertical devices","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mtrl-sci"],"primary_cat":"cond-mat.mes-hall","authors_text":"Andres Castellanos-Gomez, Gabino Rubio-Bollinger, Jorge Quereda, Juan Jos\\'e Palacios, Nicol\\'as Agr\\\"ait","submitted_at":"2017-01-24T18:07:31Z","abstract_excerpt":"We study the effect of local strain in the electronic transport properties of vertical metal-atomically thin MoS2-metal structures. We use a conductive atomic force microscope tip to apply different load forces to monolayer and few-layer MoS2 crystals deposited onto a conductive indium tin oxide (ITO) substrate while measuring simultaneously the I-V characteristics of the vertical tip/MoS2/ITO structures. The structures show rectifying I-V characteristics, with rectification ratios strongly dependent on the applied load. To understand these results, we compare the experimental I-Vs with a doub"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1701.07000","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}