{"paper":{"title":"On the impact ionization rate in direct gap semiconductors","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"A. A. Greshnov, A. N. Afanasiev, G .G. Zegrya","submitted_at":"2017-04-07T12:19:21Z","abstract_excerpt":"We present quantum-mechanical theory of impact ionization in semiconductors with the direct band gap in \\$\\Gamma\\$-point. It is shown that energy dependence of the impact ionization rate \\$\\mathcal{W}(E)\\$ near a threshold \\$E_{th}\\$ is given by superposition of the two terms, one of which is strongly anisotropic and quadratic in \\$E-E_{th}\\$, while another one is isotropic and cubic in \\$E-E_{th}\\$. Explicit form of the coefficients in such representation is derived in the framework of the 14-band \\${\\bf k\\cdot p}\\$ model, and we claim the room temperature domination of the cubic contribution"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1704.02200","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}