{"paper":{"title":"Modification and Control of Topological Insulator Surface States Using Surface Disorder","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Koji Kobayashi, Tomi Ohtsuki, Vincent Sacksteder","submitted_at":"2014-10-28T13:51:38Z","abstract_excerpt":"We numerically demonstrate a practical means of systematically controlling topological transport on the surface of a three dimensional topological insulator, by introducing strong disorder in a layer of depth $d$ extending inward from the surface of the topological insulator. The dependence on $d$ of the density of states, conductance, scattering time, scattering length, diffusion constant, and mean Fermi velocity are investigated. The proposed control via disorder depth $d$ requires that the disorder strength be near the large value which is necessary to drive the TI into the non-topological "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1410.7621","kind":"arxiv","version":3},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}