{"paper":{"title":"On the Origins of Near-Surface Stresses in Silicon around Cu-filled and CNT-filled Through Silicon Vias","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Chuan Seng Tan, Guangrui Xia, Hong Yu Li, Kaushik Ghosh, Ye Zhu, Yiheng Lin","submitted_at":"2016-01-16T01:13:13Z","abstract_excerpt":"Micro-Raman spectroscopy was employed to study the near-surface stress distributions and origins in Si around through silicon vias (TSVs) at both room temperature and elevated temperatures for Cu-filled and CNT-filled TSV samples. From the observations, we proved that the stresses near TSVs are mainly from two sources: 1) pre-existing stress before via filling, and 2) coefficients of thermal expansion (CTE) mismatch-induced stress. CTE-mismatch-induced stress is shown to dominate the compressive regime of the near-surface stress distribution around Cu-filled TSV structures, while pre-existing "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1601.04107","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}