{"paper":{"title":"Measurement of the variable surface charge concentration in gallium nitride and implications on device modeling and physics","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"B. Osman, D. Ritter, E. Ber","submitted_at":"2018-10-07T08:07:27Z","abstract_excerpt":"We have evaluated the density of interface trap states (Dit) at the surface of a GaN/AlGaN/GaN heterojunction by the previously described gated van der Pauw experiments, as well as by a UV assisted gated van der Pauw method, described in this article. The obtained Dit values are about two orders of magnitude lower than assumed by the surface-donor theory and three orders of magnitude lower than required to compensate the polarization surface charge in GaN. Previous experimental studies using a variety of other techniques reported similarly low Dit values. We hence conclude that variable midgap"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1810.03101","kind":"arxiv","version":3},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}