{"paper":{"title":"Mechanisms for p-type behavior of ZnO, Zn$_{1-x}$Mg$_x$O and related oxide semiconductors","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Christian Els\\\"asser, Daniel F. Urban, Wolfgang K\\\"orner","submitted_at":"2016-02-24T10:05:13Z","abstract_excerpt":"Possibilities of turning intrinsically n-type oxide semiconductors like ZnO and Zn$_{1-x}$Mg$_x$O into p-type materials are investigated. Motivated by recent experiments on Zn$_{1-x}$Mg$_x$O doped with nitrogen we analyze the electronic defect levels of point defects N$_{{\\rm O}}$, v$_{{\\rm Zn}}$, and N$_{{\\rm O}}$-v$_{{\\rm Zn}}$ pairs in ZnO and Zn$_{1-x}$Mg$_x$O by means of self-interaction-corrected density functional theory calculations. We show how the interplay of defects can lead to shallow acceptor defect levels, although the levels of individual point defects N$_{{\\rm O}}$ are too dee"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1602.07451","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}