{"paper":{"title":"Integrated Silicon Nitride Devices via Inverse Design","license":"http://creativecommons.org/licenses/by/4.0/","headline":"","cross_cats":["physics.app-ph"],"primary_cat":"physics.optics","authors_text":"Julian L. Pita Ruiz, Micha\\\"el M\\'enard, Narges Dalvand","submitted_at":"2025-05-05T14:08:32Z","abstract_excerpt":"Integrated photonic devices made of silicon nitride (SiN), which can be integrated with silicon-on-insulator and III-V platforms, are expected to drive the expansion of silicon photonics technology. However, the relatively low refractive index contrast of SiN is often considered a limitation for creating compact and efficient devices. Here, we present three freeform SiN devices-a coarse wavelength-division multiplexer, a five-mode mode-division multiplexer, and a polarization beam splitter-while systematically benchmarking both the design capability and the fabrication repeatability and robust"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"2505.02662","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/2505.02662/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}