{"paper":{"title":"Strain effect in highly-doped n-type 3C-SiC-on-glass substrate for mechanical sensors and mobility enhancement","license":"http://creativecommons.org/licenses/by-nc-sa/4.0/","headline":"","cross_cats":["cond-mat.mtrl-sci"],"primary_cat":"physics.app-ph","authors_text":"Alan Iacopi, Debbie G. Senesky, Dzung Viet Dao, Fengwen Mu, Han-Hao Cheng, Hoan-Phuong Phan, Leonie Hold, Nam-Trung Nguyen, Tadatomo Suga, Toan Dinh, Tuan-Khoa Nguyen","submitted_at":"2018-02-22T08:39:34Z","abstract_excerpt":"This work reports the strain effect on the electrical properties of highly doped n-type single crystalline cubic silicon carbide (3C-SiC) transferred onto a 6-inch glass substrate employing an anodic bonding technique. The experimental data shows high gauge factors of -8.6 in longitudinal direction and 10.5 in transverse direction along the [100] orientation. The piezoresistive effect in the highly doped 3C-SiC film also exhibits an excellent linearity and consistent reproducibility after several bending cycles. The experimental result was in good agreement with the theoretical analysis based "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1802.07941","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}