{"paper":{"title":"Analysis and validation of low-frequency noise reduction in MOSFET circuits using variable duty cycle switched biasing","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.other","authors_text":"Kapil Jainwal, Kushal Shah, Mukul Sarkar","submitted_at":"2017-04-04T05:36:53Z","abstract_excerpt":"Randomization of the trap state of defects present at the gate Si-SiO$_2$ interface of MOSFET is responsible for the low-frequency noise phenomena such as Random Telegraph Signal (RTS), burst, and 1/\\textit{f} noise. In a previous work, theoretical modelling and analysis of the RTS noise in MOS transistor was presented and it was shown that this 1/\\textit{f} noise can be reduced by decreasing the duty cycle ($f_{D}$) of switched biasing signal. In this paper, an extended analysis of this 1/\\textit{f} noise reduction model is presented and it is shown that the RTS noise reduction is accompanied"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1704.00876","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}