{"paper":{"title":"First Experimental Demonstration of Gate-all-around III-V MOSFET by Top-down Approach","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Jiangjiang Gu, Peide D. Ye, Robert Colby, Roy G. Gordon, Yanqing Wu, Yiqun Liu","submitted_at":"2011-12-15T17:21:27Z","abstract_excerpt":"The first inversion-mode gate-all-around (GAA) III-V MOSFETs are experimentally demonstrated with a high mobility In0.53Ga0.47As channel and atomic-layer-deposited (ALD) Al2O3/WN gate stacks by a top-down approach. A well-controlled InGaAs nanowire release process and a novel ALD high-k/metal gate process has been developed to enable the fabrication of III-V GAA MOSFETs. Well-behaved on-state and off-state performance has been achieved with channel length (Lch) down to 50nm. A detailed scaling metrics study (S.S., DIBL, VT) with Lch of 50nm - 110nm and fin width (WFin) of 30nm - 50nm are carri"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1112.3573","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}