{"paper":{"title":"Bias Scheme Reducing Transient Currents and Speeding up Read Operations for 3-D Cross Point PCM","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cs.ET","authors_text":"Houpeng Chen, Meng Liu, Qian Wang, Xi Li, Yu Lei, Zhitang Song","submitted_at":"2018-11-12T12:15:20Z","abstract_excerpt":"3-D cross point phase change memory (PCM) is a promising emerging memory. However, dynamic performances of 3-D cross point PCM are limited and the role of bias scheme is unknown. Previous studies on bias schemes for planar memories use static analyses to assess static array performances. Here, a high peak transient read current is found to result in a long read access time. Three factors which contribute to the high peak read current are analyzed.  The proposed 2V/3 bias scheme and a single-reference parasitic-matching sensing circuit are utilized in a 64Mbit 3-D cross point PCM. The sensing t"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1811.04684","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}