{"paper":{"title":"Significant reduction of critical currents in MRAM designs using dual free layer with perpendicular and in-plane anisotropy","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mes-hall"],"primary_cat":"physics.comp-ph","authors_text":"Christoph Vogler, Claas Abert, Dieter Suess, Florian Bruckner, Hossein Sepehri-Amin","submitted_at":"2017-02-03T13:13:27Z","abstract_excerpt":"One essential feature in MRAM cells is the spin torque efficiency, which describes the ratio of the critical switching current to the energy barrier. Within this paper it is reported that the spin torque efficiency can be improved by a factor of 3.2 by the use a of dual free layer device, which consists of one layer with perpendicular crystalline anisotropy and a second layer with in-plane crystalline anisotropy. Detailed simulations solving the spin transport equations simultaneously with the micromagnetics equation were performed in order to understand the origin of the switching current red"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1702.00996","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}