{"paper":{"title":"Heating of Two-Dimensional Holes in SiGe and the B = 0 Metal-Insulator Transition","license":"","headline":"","cross_cats":[],"primary_cat":"cond-mat","authors_text":"(2) Laboratory of Solid State Physics, (3) Laboratoire de Photonique et de Nanostructures, (4) Paul Scherrer Institut, Bagneux, CNRS, D. Gr\\\"utzmacher (4) ((1) CEA/Saclay, D. L'Hote (1), ETH Z\\\"urich, France, G. Dehlinger (4), K. Ensslin (2), R. Leturcq (1), R. Tourbot (1), SPEC, Switzerland, Switzerland), T. Ihn (2), U. Gennser (3), V. Senz (2)","submitted_at":"2001-07-23T08:46:12Z","abstract_excerpt":"We study the resistivity vs. electric field dependence $\\rho(E)$ of a 2D hole system in SiGe close to the B=0 metal-insulator transition. Using $\\rho$ as a ``thermometer'' to obtain the effective temperature of the holes $T_e(E)$, we find that the $\\rho(E)$ dependence can be attributed to hole heating. The hole-phonon coupling involves weakly screened piezoelectric and deformation potentials compatible with previous measurements. The damping of the Shubnikov-de Haas oscillations gives the same $T_e$ values. Thus the $\\rho(E)$ dependence and the $E$-field ``scaling'' do not provide additional e"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"cond-mat/0107457","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}