{"paper":{"title":"Development of Small-pitch, Ultra-thin 3D Silicon Sensors at USTC","license":"http://creativecommons.org/licenses/by-sa/4.0/","headline":"Ultra-thin 3D silicon sensors with 50-micron active layers and 25-micron pixels are designed for single-pixel position and timing measurements.","cross_cats":[],"primary_cat":"physics.ins-det","authors_text":"Chuan Liao, De Zhang, Han Li, Jinlan Peng, Kuo Ma, Manwen Liu, Shengjia He, Tian-ao Wang, Wenhua Shi, Xiang Li, Xiuxia Wang, Yanwen Liu, Yu Nie, Zebo Tang, Zheng Li, Zheng Liang","submitted_at":"2026-05-13T09:58:48Z","abstract_excerpt":"We report on the development of 3D silicon sensors at the University of Science and Technology of China (USTC). The sensor involves columnar electrodes (5 um in diameter) of both doping types, etched from the same wafer side. The p+ electrodes pass through the epitaxial wafer, whereas the n+ electrodes stop at a short distance from the opposite side of the epitaxial wafer. With respect to previous generations of 3D sensors, they feature an ultra-thin active substrate (50 um) and a small pixel size of 50 um x 50 um or 25 um x 25 um. This R&D project aims to establish a sensor technology to simu"},"claims":{"count":4,"items":[{"kind":"strongest_claim","text":"The sensor involves columnar electrodes (5 um in diameter) of both doping types, etched from the same wafer side. The p+ electrodes pass through the epitaxial wafer, whereas the n+ electrodes stop at a short distance from the opposite side of the epitaxial wafer. With respect to previous generations of 3D sensors, they feature an ultra-thin active substrate (50 um) and a small pixel size of 50 um x 50 um or 25 um x 25 um. This R&D project aims to establish a sensor technology to simultaneously measure position and time information at the single-pixel level.","source":"verdict.strongest_claim","status":"machine_extracted","claim_id":"C1","attestation":"unclaimed"},{"kind":"weakest_assumption","text":"That the fabricated sensors with the described electrode geometry and 50 um thickness will actually achieve simultaneous position and timing resolution at the single-pixel level once characterized, as the abstract states the first run is complete but provides no performance data.","source":"verdict.weakest_assumption","status":"machine_extracted","claim_id":"C2","attestation":"unclaimed"},{"kind":"one_line_summary","text":"USTC produced ultra-thin 3D silicon pixel sensors with small pitches for simultaneous single-pixel position and timing measurements.","source":"verdict.one_line_summary","status":"machine_extracted","claim_id":"C3","attestation":"unclaimed"},{"kind":"headline","text":"Ultra-thin 3D silicon sensors with 50-micron active layers and 25-micron pixels are designed for single-pixel position and timing measurements.","source":"verdict.pith_extraction.headline","status":"machine_extracted","claim_id":"C4","attestation":"unclaimed"}],"snapshot_sha256":"870263a5203b500265a9b328501b8083cd4b42bb903682d666d310536c0e45eb"},"source":{"id":"2605.13281","kind":"arxiv","version":1},"verdict":{"id":"a8ad903c-daa9-46a8-a244-869c1c8025ed","model_set":{"reader":"grok-4.3"},"created_at":"2026-05-14T19:04:01.555884Z","strongest_claim":"The sensor involves columnar electrodes (5 um in diameter) of both doping types, etched from the same wafer side. The p+ electrodes pass through the epitaxial wafer, whereas the n+ electrodes stop at a short distance from the opposite side of the epitaxial wafer. With respect to previous generations of 3D sensors, they feature an ultra-thin active substrate (50 um) and a small pixel size of 50 um x 50 um or 25 um x 25 um. This R&D project aims to establish a sensor technology to simultaneously measure position and time information at the single-pixel level.","one_line_summary":"USTC produced ultra-thin 3D silicon pixel sensors with small pitches for simultaneous single-pixel position and timing measurements.","pipeline_version":"pith-pipeline@v0.9.0","weakest_assumption":"That the fabricated sensors with the described electrode geometry and 50 um thickness will actually achieve simultaneous position and timing resolution at the single-pixel level once characterized, as the abstract states the first run is complete but provides no performance data.","pith_extraction_headline":"Ultra-thin 3D silicon sensors with 50-micron active layers and 25-micron pixels are designed for single-pixel position and timing measurements."},"references":{"count":15,"sample":[{"doi":"10.1016/j.nima.2012.07","year":2012,"title":"Da Via, et al., 3D silicon sensors: Design, large area production and quality assurance for the ATLAS IBL pixel detector upgrade, Nucl","work_id":"4960378a-fda5-4d46-8391-b74a35d84835","ref_index":1,"cited_arxiv_id":"","is_internal_anchor":false},{"doi":"10.3389/fphy","year":2021,"title":"Likelihood methods for CMB experiments","work_id":"4c9bf8c0-8ff7-4f97-9742-2d7b97d663cb","ref_index":2,"cited_arxiv_id":"","is_internal_anchor":false},{"doi":"10.1016/j","year":2019,"title":"Pattern Recognition 127 (2022), 108611","work_id":"238df2e4-a3e5-46f3-860e-3ae2b0094b97","ref_index":3,"cited_arxiv_id":"","is_internal_anchor":false},{"doi":"10.1016/j.nima.2024","year":2024,"title":"Diehl, et al., Evaluation of 3D sensors for fast timing applications, Nucl.Instrum.Meth.A1065(2024)169517.doi:10.1016/j.nima.2024","work_id":"24eb3d24-e05d-451b-a946-40ac9b608dfe","ref_index":4,"cited_arxiv_id":"","is_internal_anchor":false},{"doi":"","year":2011,"title":"Parker, et al., Increased Speed: 3D Silicon Sensors; Fast Current Amplifiers, IEEE Trans","work_id":"21f8a61e-fcba-4dba-b4a3-d58d2489220f","ref_index":5,"cited_arxiv_id":"","is_internal_anchor":false}],"resolved_work":15,"snapshot_sha256":"64ca11c8e9337a58d3f563c7a764743e434cb7689919d3f162c98da486e6f84a","internal_anchors":0},"formal_canon":{"evidence_count":2,"snapshot_sha256":"3d298b8b5187920aa51f48f1a0080484dd0e864c5661356f6da9bc38bb4f2047"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}