{"paper":{"title":"Room-temperature spin transport in n-Ge probed by four-terminal nonlocal measurements","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mes-hall"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Kentarou Sawano, Kohei Hamaya, Makoto Tsukahara, Michihiro Yamada, Shinya Yamada, Takahiro Naito, Yuichi Fujita","submitted_at":"2017-08-03T01:08:35Z","abstract_excerpt":"We demonsrtate electrical spin injection and detection in $n$-type Ge ($n$-Ge) at room temperature using four-terminal nonlocal spin-valve and Hanle-effect measurements in lateral spin-valve (LSV) devices with Heusler-alloy Schottky tunnel contacts. The spin diffusion length ($\\lambda$$_{\\rm Ge}$) of the Ge layer used ($n \\sim$ 1 $\\times$ 10$^{19}$ cm$^{-3}$) at 296 K is estimated to be $\\sim$ 0.44 $\\pm$ 0.02 $\\mu$m. Room-temperature spin signals can be observed reproducibly at the low bias voltage range ($\\le$ 0.7 V) for LSVs with relatively low resistance-area product ($RA$) values ($\\le$ 1 "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1708.00962","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}