{"paper":{"title":"Band-offset-induced lateral shift of valley electrons in ferromagnetic MoS$_2$/WS$_2$ planar heterojunctions","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Alireza Saffarzadeh, Hassan Ghadiri","submitted_at":"2018-03-10T14:10:48Z","abstract_excerpt":"Low-energy coherent transport and Goos-H\\\"{a}nchen (GH) lateral shift of valley electrons in planar heterojunctions composed of normal MoS$_2$ and ferromagnetic WS$_2$ monolayers are theoretically investigated. Two types of heterojunctions in the forms of WS$_2$/MoS$_2$/WS$_2$ (type-A) and MoS$_2$/WS$_2$/MoS$_2$ (type-B) with incident electrons in MoS$_2$ region are considered in which the lateral shift of electrons is induced by band alignments of the two constituent semiconductors. It is shown that the type-A heterojunction can act as an electron waveguide due to electron confinement between"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1803.03811","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}