{"as_of":"2026-08-10T16:47:00Z","caps":{"database_statements":6,"inbound":100,"outbound":100},"context_digest":"sha256:6e7cb353a9035d48fd8d3c7c1ec2f7285c25de8cfc6c81e7241240e7986f4d51","coverage":[{"denominator":0,"lane":"reference_resolution","note":"Typed states for the displayed outbound observations.","records_observed":0,"source":"paper_references, paper_reference_links","source_observed_at":null,"state":"measured"},{"denominator":3,"lane":"standing_notices","note":"One-hop event checks from named stored sources.","records_observed":3,"source":"scholarly_work_events, retraction_status_cache","source_observed_at":"2026-08-10T06:31:04.303077+00:00","state":"measured"},{"denominator":3,"lane":"inbound_itemization","note":"Pith citing papers itemized under the disclosed page cap.","records_observed":3,"source":"paper_references, paper_reference_links","source_observed_at":"2026-07-04T00:48:46.936506Z","state":"measured"},{"denominator":1,"lane":"external_citation_measurements","note":"A source-named dated measurement, never combined with another source.","records_observed":0,"source":"arxiv_reference","source_observed_at":"2026-07-04T00:49:17.270769Z","state":"measured"}],"external_citation_measurements":[],"inbound":[{"citation":{"cited_paper":{"arxiv_id":"2409.19315","last_updated":"2024-11-25T12:14:33Z","snapshot_observed_at":"2026-07-06T19:23:50.186410Z","submitted_at":"2024-09-28T11:00:11Z","title":"Analog In-Memory Computing Attention Mechanism for Fast and Energy-Efficient Large Language Models","version":2},"cited_work":{"arxiv_id":"2409.19315","doi":null,"metadata_source":"arxiv_reference","pith_arxiv_id":"2409.19315","snapshot_observed_at":"2026-07-04T00:49:17.270769Z","title":null,"venue":null,"work_id":"690ca976-41be-401e-8832-c20084aaba94","year":null},"citing_paper":{"arxiv_id":"2605.28208","last_updated":"2026-07-02T13:06:07Z","snapshot_observed_at":"2026-08-07T06:35:35.770352Z","submitted_at":"2026-05-27T09:28:40Z","title":"FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors","version":1},"reference_index":10,"source":"pdf_text","source_observed_at":"2026-06-29T09:46:51.255151Z"},"links":{"cited_paper":"/paper/2409.19315","citing_paper":"/paper/2605.28208"},"observation_digest":"sha256:b54242ed3478291016b9a2fc472368e427c3a77a360f70ae3b640112e56392af","observation_id":"51e51882-3f4c-43bd-983b-44aaa632b00d","resolution":{"observed_at":"2026-06-29T09:53:17.529661Z","resolver_source":"arxiv_id","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":{"arxiv_id":"2409.19315","last_updated":"2024-11-25T12:14:33Z","snapshot_observed_at":"2026-07-06T19:23:50.186410Z","submitted_at":"2024-09-28T11:00:11Z","title":"Analog In-Memory Computing Attention Mechanism for Fast and Energy-Efficient Large Language Models","version":2},"cited_work":{"arxiv_id":"2409.19315","doi":null,"metadata_source":"arxiv_reference","pith_arxiv_id":"2409.19315","snapshot_observed_at":"2026-07-04T00:49:17.270769Z","title":null,"venue":null,"work_id":"690ca976-41be-401e-8832-c20084aaba94","year":null},"citing_paper":{"arxiv_id":"2605.28208","last_updated":"2026-07-02T13:06:07Z","snapshot_observed_at":"2026-08-07T06:35:35.770352Z","submitted_at":"2026-05-27T09:28:40Z","title":"FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors","version":2},"reference_index":10,"source":"pdf_text","source_observed_at":"2026-06-30T11:25:45.532130Z"},"links":{"cited_paper":"/paper/2409.19315","citing_paper":"/paper/2605.28208"},"observation_digest":"sha256:baef400583eb6045147c708514b6b05418c664980d01e752f056a92b1158942f","observation_id":"8f4bf482-4122-4876-8002-d8ca71669e07","resolution":{"observed_at":"2026-06-30T11:34:38.196448Z","resolver_source":"arxiv_id","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":{"arxiv_id":"2409.19315","last_updated":"2024-11-25T12:14:33Z","snapshot_observed_at":"2026-07-06T19:23:50.186410Z","submitted_at":"2024-09-28T11:00:11Z","title":"Analog In-Memory Computing Attention Mechanism for Fast and Energy-Efficient Large Language Models","version":2},"cited_work":{"arxiv_id":"2409.19315","doi":null,"metadata_source":"arxiv_reference","pith_arxiv_id":"2409.19315","snapshot_observed_at":"2026-07-04T00:49:17.270769Z","title":null,"venue":null,"work_id":"690ca976-41be-401e-8832-c20084aaba94","year":null},"citing_paper":{"arxiv_id":"2605.28208","last_updated":"2026-07-02T13:06:07Z","snapshot_observed_at":"2026-08-07T06:35:35.770352Z","submitted_at":"2026-05-27T09:28:40Z","title":"FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors","version":3},"reference_index":10,"source":"pdf_text","source_observed_at":"2026-07-04T00:48:46.936506Z"},"links":{"cited_paper":"/paper/2409.19315","citing_paper":"/paper/2605.28208"},"observation_digest":"sha256:f109f7a1573aa26191c034df97935c71d94b7a023093251f2fd1be187d88a444","observation_id":"0342b16f-683b-472f-9a7c-06d6b0d94eb8","resolution":{"observed_at":"2026-07-04T00:49:17.275069Z","resolver_source":"arxiv_id","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}}],"links":{"evidence":"/evidence","html":"/paper/2409.19315/citation-record","integrity":"/paper/2409.19315/integrity","json":"/paper/2409.19315/citation-record.json","paper":"/paper/2409.19315"},"outbound":[],"paper":{"arxiv_id":"2409.19315","last_updated":"2024-11-25T12:14:33Z","latest_version":2,"primary_category":"cs.NE","snapshot_observed_at":"2026-07-06T19:23:50.186410Z","submitted_at":"2024-09-28T11:00:11Z","title":"Analog In-Memory Computing Attention Mechanism for Fast and Energy-Efficient Large Language Models"},"reference_resolution":{"displayed":0,"state_counts":{"malformed_identifier":0,"metadata_mismatch":0,"parse_uncertain":0,"unresolved":0,"verified_exact":0,"verified_fuzzy":0},"total_outbound_references":0},"refusal":"A citation records a reference. It does not transfer a finding from one paper to another.","schema":"pith.paper-citation-record.v1","standing_sources":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"thesis":"As of 10 August 2026, this Paper Citation Record lists 0 of 0 outbound references and 3 inbound Pith citation observations for arXiv:2409.19315."}