{"as_of":"2026-08-14T00:28:00Z","caps":{"database_statements":6,"inbound":100,"outbound":100},"context_digest":"sha256:60af9dd21b8d6083922925ba528bbc97902db23bcc1ef23d8c5cdbee6494e146","coverage":[{"denominator":37,"lane":"reference_resolution","note":"Typed states for the displayed outbound observations.","records_observed":37,"source":"paper_references, paper_reference_links","source_observed_at":"2026-08-11T16:54:27.848931Z","state":"measured"},{"denominator":37,"lane":"standing_notices","note":"One-hop event checks from named stored sources.","records_observed":37,"source":"scholarly_work_events, retraction_status_cache","source_observed_at":"2026-08-13T06:32:02.005865+00:00","state":"measured"},{"denominator":0,"lane":"inbound_itemization","note":"Pith citing papers itemized under the disclosed page cap.","records_observed":0,"source":"paper_references, paper_reference_links","source_observed_at":null,"state":"measured"},{"denominator":1,"lane":"external_citation_measurements","note":"A source-named dated measurement, never combined with another source.","records_observed":0,"source":"cited_works","source_observed_at":null,"state":"measured"}],"external_citation_measurements":[],"inbound":[],"links":{"evidence":"/evidence","html":"/paper/2412.09693/citation-record","integrity":"/paper/2412.09693/integrity","json":"/paper/2412.09693/citation-record.json","paper":"/paper/2412.09693"},"outbound":[{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T16:54:27.510211Z","title":"Gao , author J","venue":null,"work_id":null,"year":null},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":1,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.510211Z"},"links":{"citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:4a365e49e75430c4cbfa299ad35cc9ebab598b7b30372d79d656652f89da3384","observation_id":"18e1637a-d338-4ca5-ac11-13071c5cdaad","resolution":{"observed_at":"2026-08-11T16:54:27.510211Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1063/1.2937855","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T16:54:28.554579Z","title":"Gao , author M","venue":null,"work_id":"afc107d9-ba28-4846-a2af-b97d4f5ca323","year":null},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":2,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.518613Z"},"links":{"citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:12c9ae61af2e59a56760b3f8cd7ceba38556b84626568895b650087498d08826","observation_id":"d2bb1e77-0dff-4da4-99de-01db717ebb68","resolution":{"observed_at":"2026-08-11T16:54:28.569950Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T16:54:27.539755Z","title":"Gao , author M","venue":null,"work_id":null,"year":null},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":3,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.539755Z"},"links":{"citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:4a8967e254e5a2c1181bf8130816820daee3dca2418bf954045efb76e8bcc51b","observation_id":"2d1f19e0-bce5-4e83-8e94-57fe8ae11a40","resolution":{"observed_at":"2026-08-11T16:54:27.539755Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1088/0034-4885/50/12/003","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T16:54:28.509656Z","title":null,"venue":null,"work_id":"6649aeb1-a912-407f-bfb0-c59dcea17a67","year":1987},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":4,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.549679Z"},"links":{"citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:f8e27ca65f7737a1c77a4ba791f97bb8ae152bfee6d16b4592bacd468613c8f7","observation_id":"606996ef-c6ee-4468-9c68-e8444a56d918","resolution":{"observed_at":"2026-08-11T16:54:28.516451Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T16:54:29.176089Z","title":"Esquinazi ,\\ ed.,\\ title Tunneling systems in amorphous and crystalline solids , \\ \\ ( publisher Springer Berlin Heidelberg ,\\ address Berlin, Heidelberg ,\\ year 1998 ) NoStop","venue":null,"work_id":"2a682cfd-c726-4c48-84eb-01d1c4a582fc","year":1998},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":5,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.559983Z"},"links":{"citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:37c5fe6db9bd961b48555fcf925b94d3f6c847bf44765f19ea11df63514d504a","observation_id":"7240ba72-e025-4e33-a033-c9de2fbe246c","resolution":{"observed_at":"2026-08-11T16:54:29.185264Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T16:54:27.568363Z","title":"M\\\" u ller , author J","venue":null,"work_id":null,"year":null},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":6,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.568363Z"},"links":{"citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:4514eaf8d3419e10d2494ef2f142bcc04f3792536846212deb8435a20aebe930","observation_id":"e00be312-be14-4a6e-8ad9-43ce08a0f7ba","resolution":{"observed_at":"2026-08-11T16:54:27.568363Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T16:54:27.574909Z","title":null,"venue":null,"work_id":null,"year":1951},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":7,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.574909Z"},"links":{"citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:07a2270250837863414a8d68715431e086f1ba02756ab9f7a10e65525f7cc4be","observation_id":"9712a816-9a03-43b1-93de-92537cbc1eb3","resolution":{"observed_at":"2026-08-11T16:54:27.574909Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1063/1.3292302","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T16:54:28.428109Z","title":"Noroozian , author J","venue":null,"work_id":"5387c786-96fe-4d76-ae0a-6557c6ba47ef","year":null},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":8,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.585915Z"},"links":{"citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:c706e21804aa73d704f1d2eb9d28f6c7f42cde2ccaf2e15488b6e9e5a958768d","observation_id":"f3fe843f-b021-405c-a8a5-4e6c8d67b30d","resolution":{"observed_at":"2026-08-11T16:54:28.437472Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T16:54:27.594395Z","title":null,"venue":null,"work_id":null,"year":null},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":9,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.594395Z"},"links":{"citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:68bdadfe55e626ebe37700abe796871d2ead585a554e9841b330806c50db1503","observation_id":"8ef1dd77-9660-403e-ac08-626869969c54","resolution":{"observed_at":"2026-08-11T16:54:27.594395Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1063/1.3292355","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T16:54:28.379682Z","title":null,"venue":null,"work_id":"22b5de64-fe42-452c-a7e5-791eb95a918d","year":null},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":10,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.605490Z"},"links":{"citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:d98ea14cbe49fa1114d44cdea5864427887c0dd7c25cb220ca4c8a3755fde3f7","observation_id":"f93d7f92-968f-4644-aed9-5d0b5649e4b8","resolution":{"observed_at":"2026-08-11T16:54:28.387975Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T16:54:29.147970Z","title":null,"venue":null,"work_id":"cb1e5ee1-8937-4857-8e9a-4312584e2cca","year":2017},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":11,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.610783Z"},"links":{"citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:31f74b0c59117801424de0cd5e35b3349d9c67f5869c79f93184b036dd35d8d3","observation_id":"1b1e31ca-edbb-44a1-88ba-56de345585af","resolution":{"observed_at":"2026-08-11T16:54:29.155837Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1117/12.926055","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T16:54:29.114406Z","title":null,"venue":null,"work_id":"8caffb08-0ad2-4493-93cc-f33e7e649087","year":null},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":12,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.617749Z"},"links":{"citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:f9488b8c91f2b724617385043a05c9239e0cc73091b5ac7bd94a6657f5426a39","observation_id":"bb16cc3a-45f0-4529-9e45-e297b3e9f1ff","resolution":{"observed_at":"2026-08-11T16:54:29.121174Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T16:54:29.082471Z","title":"Gao ,\\ title The Physics of Superconducting Microwave Resonators ,\\ @noop Ph.D","venue":null,"work_id":"103cab60-c95e-479f-b3f5-5877004ef3c5","year":2008},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":13,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.624382Z"},"links":{"citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:b8cc69f45a1b6e9704ddef9d5d1c98f026a0ac89b1d2914f6b248225c2e544bd","observation_id":"03cc98f0-04f0-4411-b10d-4e45196864dd","resolution":{"observed_at":"2026-08-11T16:54:29.093702Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1103/physrevapplied.21.044036","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T16:54:28.358083Z","title":"Kouwenhoven , author G","venue":null,"work_id":"2c2e872d-e1ca-40f8-ba05-b11d431d1cad","year":null},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":14,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.629651Z"},"links":{"citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:0d3c73ca08ea9219404f43565fc9197d87cb1adf9926e6a82b01981087554db0","observation_id":"9781b291-f982-4191-b565-03d61a08ba99","resolution":{"observed_at":"2026-08-11T16:54:28.364312Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":{"arxiv_id":"2409.09301","last_updated":"2024-09-14T04:41:59Z","snapshot_observed_at":"2026-08-12T22:45:05.136512Z","submitted_at":"2024-09-14T04:41:59Z","title":"Cryogenic microwave performance of silicon nitride and amorphous silicon deposited using low-temperature ICPCVD","version":1},"cited_work":{"arxiv_id":"2409.09301","doi":null,"metadata_source":"pith","pith_arxiv_id":"2409.09301","snapshot_observed_at":"2026-08-11T16:54:28.974368Z","title":"Cryogenic microwave performance of silicon nitride and amorphous silicon deposited using low-temperature ICPCVD","venue":"physics.ins-det","work_id":"8ff409c3-52f0-4e72-8678-a037e5d722cd","year":2024},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":15,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.643111Z"},"links":{"cited_paper":"/paper/2409.09301","citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:913a58463f5fe86e1dccd1c299589a372bbd8d8b726293bf90d53f108409b659","observation_id":"7345db56-6a1b-4030-8a39-b4f6f5b8ddd0","resolution":{"observed_at":"2026-08-11T16:54:28.994033Z","resolver_source":"local_arxiv","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T16:54:27.655750Z","title":null,"venue":null,"work_id":null,"year":null},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":16,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.655750Z"},"links":{"citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:f6d751cce9541f5fc75c21fc54578463f14088e4456dc697f2e0c9b44aaf6154","observation_id":"3514f658-cd4b-498d-bb82-3775d7d1f683","resolution":{"observed_at":"2026-08-11T16:54:27.655750Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T16:54:27.663126Z","title":null,"venue":null,"work_id":null,"year":null},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":17,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.663126Z"},"links":{"citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:575fd201c249949c230b67bd7692b2d974a0846a449dd15271eeada7629d4f60","observation_id":"5e856e42-038a-4404-9a7a-c0bb2a4b1f1d","resolution":{"observed_at":"2026-08-11T16:54:27.663126Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1063/1.3314281","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T16:54:28.278016Z","title":null,"venue":null,"work_id":"91c8cc7c-cc64-4373-9a4f-a506edbafaed","year":null},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":18,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.668898Z"},"links":{"citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:63e63fbd094fa8d900ce9c8f3403f372ad06f809aa3c8672c87f3c40a030c15d","observation_id":"699ec543-7d35-4b14-8c90-01da616d133f","resolution":{"observed_at":"2026-08-11T16:54:28.285567Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/j.phpro.2012.06.154","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T16:54:28.247000Z","title":"Bruno , author S","venue":null,"work_id":"932b4e8d-b4e5-47c8-b563-8fe825b03284","year":null},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":19,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.677203Z"},"links":{"citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:3d562e0167a6e9531f9cdca7b00f0ef8416a826943fe3044418cf2f9e1740b65","observation_id":"12159fcd-70e6-4d2f-af66-27253116dce1","resolution":{"observed_at":"2026-08-11T16:54:28.256276Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1117/12.2562233","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T16:54:28.209794Z","title":null,"venue":null,"work_id":"22548c95-71c7-4a65-92de-4f6c7d01c964","year":null},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":20,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.685975Z"},"links":{"citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:593c33732e334a6ef3567e6e0ecf3ac2ddd4983cd76fd7ad541a0b45f5cdcd83","observation_id":"eca6b8f3-081c-4211-819d-8f360b4aeff6","resolution":{"observed_at":"2026-08-11T16:54:28.220186Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1103/physrevapplied.16.014019","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T16:54:28.182484Z","title":"H \\\"a hnle , author K","venue":null,"work_id":"6feb3f11-143e-4d58-b1d4-043cb59917f3","year":null},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":21,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.694031Z"},"links":{"citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:5a0de16d940aeb9e7f780237cfad5d49860a9abe90dd296ad0639b81245b1f34","observation_id":"22c04060-541f-4608-bb50-6fa73e4518ea","resolution":{"observed_at":"2026-08-11T16:54:28.190943Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T16:54:27.701523Z","title":null,"venue":null,"work_id":null,"year":null},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":22,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.701523Z"},"links":{"citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:f333cc8dc8403c9c0613aedc71d4f06ca6f5c6ab704491689ef9ce5667d0d711","observation_id":"e567064e-df11-4d36-adb0-5b70202b56e5","resolution":{"observed_at":"2026-08-11T16:54:27.701523Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T16:54:27.708354Z","title":"Defrance , author A","venue":null,"work_id":null,"year":null},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":23,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.708354Z"},"links":{"citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:255fc5b87919b1f3489f5ebea97501930225b60df5648ea77070cb7ce5aacc9b","observation_id":"dbd05be3-f4c7-41a6-9aaa-6ae00ed59655","resolution":{"observed_at":"2026-08-11T16:54:27.708354Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T16:54:27.715842Z","title":null,"venue":null,"work_id":null,"year":null},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":24,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.715842Z"},"links":{"citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:37c0f243d30df48c6504bf0e4c124ceadfdc652253aac882bbee96faad7abee0","observation_id":"c86a8db7-9bc1-4319-9964-eb3774dc6210","resolution":{"observed_at":"2026-08-11T16:54:27.715842Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T16:54:27.725229Z","title":"Minutolo , author B","venue":null,"work_id":null,"year":null},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":25,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.725229Z"},"links":{"citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:e0e6c8c47b22324543f6b6f72fd8ae5ac56a1cb263815f1a92ee7785e4910a29","observation_id":"c7b2224e-4d74-4150-9ed1-0e0a11505907","resolution":{"observed_at":"2026-08-11T16:54:27.725229Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T16:54:29.049336Z","title":null,"venue":null,"work_id":"315fd7dd-5dfb-49c5-946b-3579ee0c2d2a","year":null},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":26,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.732569Z"},"links":{"citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:f57dfea8268f78971b22aaebfe01daa7d9dc62b13c48c4b1651d20a2dcc6a901","observation_id":"1323e3da-30c9-48f2-b3c3-de38642c2ad3","resolution":{"observed_at":"2026-08-11T16:54:29.058687Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"2016.26257","doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T16:54:28.828298Z","title":null,"venue":null,"work_id":"5676b4e8-71fe-4857-a99d-035f0090058c","year":null},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":27,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.739056Z"},"links":{"citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:50849d2af1f4109eb2fcd1aedf1de56daf2501ea9ccde07ee3716d96cc066699","observation_id":"26d029de-21b5-4ae5-85f4-a615964d86a6","resolution":{"observed_at":"2026-08-11T16:54:28.845745Z","resolver_source":"raw_fallback","status":"metadata_mismatch"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":{"arxiv_id":"1108.3117","last_updated":"2012-05-16T19:49:39Z","snapshot_observed_at":"2026-08-06T06:02:19.211214Z","submitted_at":"2011-08-15T23:09:41Z","title":"An analysis method for asymmetric resonator transmission applied to superconducting devices","version":3},"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":"1108.3117","snapshot_observed_at":"2026-08-11T16:54:27.757708Z","title":null,"venue":null,"work_id":null,"year":null},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":28,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.757708Z"},"links":{"cited_paper":"/paper/1108.3117","citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:ec6f6787d029bf2e659b9e1d47330f78db1d227bce2b7330f476de61d0724f53","observation_id":"5a09678f-020d-4147-a4c7-885346c05fad","resolution":{"observed_at":"2026-08-11T16:54:27.757708Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T16:54:27.770769Z","title":"Burnett , author T","venue":null,"work_id":null,"year":null},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":29,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.770769Z"},"links":{"citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:329d5e89bdf8f218f9358b07847912cef4bd428a73c28c66384869c9af52a609","observation_id":"a3d9707e-5a3e-41e5-b28c-fb7a798638fa","resolution":{"observed_at":"2026-08-11T16:54:27.770769Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1038/ncomms5119","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T16:54:28.067354Z","title":"Burnett , author L","venue":null,"work_id":"9a1f6e2a-75e9-431c-9ff0-22038b8512de","year":null},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":30,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.777289Z"},"links":{"citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:9ca54dc5e11aaf32b101120788e5278baf9c0757306122150aadfc5ea85ef1a1","observation_id":"aba13c9f-fe54-46e6-86a8-a3d891c04955","resolution":{"observed_at":"2026-08-11T16:54:28.075017Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T16:54:29.023604Z","title":"Barends ,\\ title Photon-detecting superconducting resonators ,\\ @noop Ph.D","venue":null,"work_id":"321b282b-8931-424b-8219-771667dd70c6","year":2009},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":31,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.784066Z"},"links":{"citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:f142ad0a93ded711efc149be5abe87320ce07f9edf66370cd6ca00efb538a9cf","observation_id":"b9da1cfc-c806-4dd4-949e-9ceeeae83b56","resolution":{"observed_at":"2026-08-11T16:54:29.030387Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T16:54:27.794320Z","title":"Kumar , author J","venue":null,"work_id":null,"year":null},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":32,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.794320Z"},"links":{"citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:e88a619ecead54d1df50175c692787656d945dc3e0cab0aa8012605c5e889365","observation_id":"f1317165-3786-41f9-9616-639528186a03","resolution":{"observed_at":"2026-08-11T16:54:27.794320Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":{"arxiv_id":"1507.06043","last_updated":"2015-07-22T03:14:27Z","snapshot_observed_at":"2026-07-06T04:24:31.116333Z","submitted_at":"2015-07-22T03:14:27Z","title":"Evidence for universal relationship between the measured 1/f permittivity noise and loss tangent created by tunneling atoms","version":1},"cited_work":{"arxiv_id":"1507.06043","doi":null,"metadata_source":"pith","pith_arxiv_id":"1507.06043","snapshot_observed_at":"2026-08-11T16:54:28.661041Z","title":"Evidence for universal relationship between the measured 1/f permittivity noise and loss tangent created by tunneling atoms","venue":"cond-mat.supr-con","work_id":"f10abf15-dc9b-4d40-ba6e-acd2a3af9d90","year":2015},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":33,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.809093Z"},"links":{"cited_paper":"/paper/1507.06043","citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:aa1a06008ea41c3a38aa42fd66c681177f8a68ca8d1d0bed323d3517596499b6","observation_id":"69b4f8e9-fd9b-4c74-b5f9-4e06b2df3e6f","resolution":{"observed_at":"2026-08-11T16:54:28.674659Z","resolver_source":"local_arxiv","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T16:54:27.819296Z","title":null,"venue":null,"work_id":null,"year":null},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":34,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.819296Z"},"links":{"citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:999bd658560bf142c4d74698fa977cafc3372e805061075b510a17ad1a3f9404","observation_id":"a39b3def-a3a3-40ac-8c1c-fd7f6fb933a2","resolution":{"observed_at":"2026-08-11T16:54:27.819296Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1063/1.3467052","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T16:54:27.948890Z","title":"Barends , author N","venue":null,"work_id":"f903efcf-f48f-48dc-afe8-ecae0f70651a","year":null},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":35,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.826977Z"},"links":{"citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:a7f40a73c5109c3b2a544de2fea5fc7392f8c9ed8d15f5cd34bb2e530cb9ee63","observation_id":"1308a175-c47a-4957-a01c-3102eb515800","resolution":{"observed_at":"2026-08-11T16:54:27.959285Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T16:54:27.835298Z","title":null,"venue":null,"work_id":null,"year":null},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":36,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.835298Z"},"links":{"citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:ebf9ef00380f0a3d39c33d7a564ad937c6d233f0d3c93cf1c60ea6512f723e68","observation_id":"0f6369e6-734f-44ce-b57e-fe0ef839a66a","resolution":{"observed_at":"2026-08-11T16:54:27.835298Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":{"arxiv_id":"1211.0934","last_updated":"2012-11-05T17:18:24Z","snapshot_observed_at":"2026-08-10T05:04:49.275545Z","submitted_at":"2012-11-05T17:18:24Z","title":"SuperSpec: design concept and circuit simulations","version":1},"cited_work":{"arxiv_id":"1211.0934","doi":null,"metadata_source":"pith","pith_arxiv_id":"1211.0934","snapshot_observed_at":"2026-08-11T16:54:28.620137Z","title":"SuperSpec: design concept and circuit simulations","venue":"astro-ph.IM","work_id":"cd478783-7ee6-4654-b58e-d6038b6acb25","year":2012},"citing_paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon","version":1},"reference_index":37,"source":"arxiv_source","source_observed_at":"2026-08-11T16:54:27.848931Z"},"links":{"cited_paper":"/paper/1211.0934","citing_paper":"/paper/2412.09693"},"observation_digest":"sha256:3f75209747720f29e5698f3b0344b70613d8a2a7e9c47ced2cffe64b048ba69c","observation_id":"9c1cbea3-9bb5-4326-b9cd-033a02a61fea","resolution":{"observed_at":"2026-08-11T16:54:28.627508Z","resolver_source":"local_arxiv","status":"metadata_mismatch"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}}],"paper":{"arxiv_id":"2412.09693","last_updated":"2024-12-12T19:15:17Z","latest_version":1,"primary_category":"physics.ins-det","snapshot_observed_at":"2026-08-12T11:53:24.200332Z","submitted_at":"2024-12-12T19:15:17Z","title":"Low two-level-system noise in hydrogenated amorphous silicon"},"reference_resolution":{"displayed":37,"state_counts":{"malformed_identifier":0,"metadata_mismatch":2,"parse_uncertain":0,"unresolved":18,"verified_exact":14,"verified_fuzzy":3},"total_outbound_references":37},"refusal":"A citation records a reference. It does not transfer a finding from one paper to another.","schema":"pith.paper-citation-record.v1","standing_sources":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"thesis":"As of 14 August 2026, this Paper Citation Record lists 37 of 37 outbound references and 0 inbound Pith citation observations for arXiv:2412.09693."}