{"as_of":"2026-08-11T14:32:00Z","caps":{"database_statements":6,"inbound":100,"outbound":100},"context_digest":"sha256:5f68f6bf1c89abba7c355c38daf58281c5c814e91c4b5a6ff7558d3868b0ad70","coverage":[{"denominator":136,"lane":"reference_resolution","note":"Typed states for the displayed outbound observations.","records_observed":100,"source":"paper_references, paper_reference_links","source_observed_at":"2026-08-09T13:49:19.130683Z","state":"measured"},{"denominator":101,"lane":"standing_notices","note":"One-hop event checks from named stored sources.","records_observed":101,"source":"scholarly_work_events, retraction_status_cache","source_observed_at":"2026-08-11T06:34:44.6726+00:00","state":"measured"},{"denominator":1,"lane":"inbound_itemization","note":"Pith citing papers itemized under the disclosed page cap.","records_observed":1,"source":"paper_references, paper_reference_links","source_observed_at":"2026-08-09T13:49:18.652528Z","state":"measured"},{"denominator":1,"lane":"external_citation_measurements","note":"A source-named dated measurement, never combined with another source.","records_observed":0,"source":"pith","source_observed_at":"2026-08-09T13:49:19.354067Z","state":"measured"}],"external_citation_measurements":[],"inbound":[{"citation":{"cited_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"cited_work":{"arxiv_id":"2502.02057","doi":null,"metadata_source":"pith","pith_arxiv_id":"2502.02057","snapshot_observed_at":"2026-08-09T13:49:19.354067Z","title":"Valley Gapless Semiconductor: Models and Applications","venue":"cond-mat.mes-hall","work_id":"31653c49-ce4f-432a-8fee-8bcdd1985e38","year":2025},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":58,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.652528Z"},"links":{"cited_paper":"/paper/2502.02057","citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:50c5c5c73238e9c9d2c69d440e4980a8c43b20589a71b2323b723c6a40dbdcb6","observation_id":"c2c6ca99-6d13-4dbf-9496-d30e84bb33ad","resolution":{"observed_at":"2026-08-09T13:49:19.361044Z","resolver_source":"local_arxiv","status":"metadata_mismatch"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}}],"links":{"evidence":"/evidence","html":"/paper/2502.02057/citation-record","integrity":"/paper/2502.02057/integrity","json":"/paper/2502.02057/citation-record.json","paper":"/paper/2502.02057"},"outbound":[{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.659574Z","title":"When ∆ 1 ̸= 0, the Dirac points are destroyed and the band structures illustrated in Fig","venue":null,"work_id":null,"year":null},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":1,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.659574Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:635595cf1c23458bf15991c38e83f88493badb9f3889b59aac0b27dad8e9ea10","observation_id":"5e070ac8-ee01-43b5-b08e-8a874d232eda","resolution":{"observed_at":"2026-08-09T13:49:18.659574Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.670909Z","title":null,"venue":null,"work_id":null,"year":2019},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":2,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.670909Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:c2c43de915f9437cb8824f1bbc2181b5165a7dc64ecf2bb418a359e266d9693c","observation_id":"140a219f-74e4-49be-b8c1-ee76a161ca70","resolution":{"observed_at":"2026-08-09T13:49:18.670909Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.665928Z","title":"Zheng, Y.-F","venue":null,"work_id":null,"year":2022},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":3,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.665928Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:534d987bd354c4f0cae7b3d2e9f95ae0b947a2830d30404c834454e0d430e9b6","observation_id":"1dea9b90-552c-473e-8462-21d17589a714","resolution":{"observed_at":"2026-08-09T13:49:18.665928Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.680734Z","title":null,"venue":null,"work_id":null,"year":2015},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":4,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.680734Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:8b99f9463d253ba0f1223d8eee0e41425fa63bf3dd6313c7e880724cd70fabb5","observation_id":"33d6eaf8-23bf-47b2-97a2-b99fd6e4b24e","resolution":{"observed_at":"2026-08-09T13:49:18.680734Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.675921Z","title":null,"venue":null,"work_id":null,"year":2016},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":5,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.675921Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:e56f21c2d28c70bb5de9772a4f745440d618bc4a34ec81780d2cf6354fb6349d","observation_id":"fb0edc3c-1f96-40cc-97f7-58f81c53ac7d","resolution":{"observed_at":"2026-08-09T13:49:18.675921Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.690631Z","title":null,"venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":6,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.690631Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:e0451cb771e6e5c830ec503a46e73f658ef4d837d388ca5fa2a61579dd49ec48","observation_id":"722a6bbf-b525-49ad-84a2-83e034f1e82b","resolution":{"observed_at":"2026-08-09T13:49:18.690631Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.685319Z","title":null,"venue":null,"work_id":null,"year":2014},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":7,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.685319Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:127a627ca4bb67f54d6212ca75f2b4bc98c7279427b6493a9f6f3b2d22158308","observation_id":"eb0240bf-717d-4c41-a629-f55fd6e8ca80","resolution":{"observed_at":"2026-08-09T13:49:18.685319Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.699783Z","title":"Tyulnev, ´A","venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":8,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.699783Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:629864bb2150412e1d04178110e0a263f4f6c247f664b124d0868c3ef5ff8c93","observation_id":"4c454eb7-bd5f-4daa-977e-773298e93544","resolution":{"observed_at":"2026-08-09T13:49:18.699783Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.695152Z","title":null,"venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":9,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.695152Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:eec165d3c4d766e3eb41889fbf901755241f2afa4bfeca55a10e323c2cd30063","observation_id":"897b1729-6d3c-4dfe-bc96-2d4e2c8cefdd","resolution":{"observed_at":"2026-08-09T13:49:18.695152Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.709389Z","title":"Huang, K","venue":null,"work_id":null,"year":2025},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":10,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.709389Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:ece54554d9da0a41bf2505d91fdf7a65b6068eb737820cdece695c80617b642a","observation_id":"d6a0adb7-0c72-4882-9e58-b5599766fb2f","resolution":{"observed_at":"2026-08-09T13:49:18.709389Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.704727Z","title":null,"venue":null,"work_id":null,"year":2025},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":11,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.704727Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:5d0c575a43486ac064197187908f42ae93ce0c8323fd357acfd6d36fb96deab5","observation_id":"3587475a-f55a-44df-8536-7fbf0adc0f3f","resolution":{"observed_at":"2026-08-09T13:49:18.704727Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.718969Z","title":null,"venue":null,"work_id":null,"year":2025},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":12,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.718969Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:d2dd9aa11d7f3db77d259bf9574bdebc470e07be3705e46ffcc93afb311219c6","observation_id":"2658359b-61a4-4860-a562-4a96c8db557f","resolution":{"observed_at":"2026-08-09T13:49:18.718969Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.714394Z","title":"Jiang, Y","venue":null,"work_id":null,"year":2025},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":13,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.714394Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:d8cd87f66fb0c5ccc380f2134306ba693b826ffe03e564cb6ac9284f45658c28","observation_id":"a73c9549-ec99-4d01-add0-48d552208e94","resolution":{"observed_at":"2026-08-09T13:49:18.714394Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.728501Z","title":"Shen, J.-D","venue":null,"work_id":null,"year":2025},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":14,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.728501Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:ed9010fc5693ed6f83619182c1c9f23d6792208b5b20465e93fd51560839d4a3","observation_id":"c3eb3938-b805-4f0e-991b-830ec662762a","resolution":{"observed_at":"2026-08-09T13:49:18.728501Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.723889Z","title":null,"venue":null,"work_id":null,"year":2025},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":15,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.723889Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:e2edb87751bf0a0d6105583c4515b3107fdc0f4cc5f22278e25dc1dba4bffaed","observation_id":"d5f996b6-0b99-4314-9713-41da9bbd56c9","resolution":{"observed_at":"2026-08-09T13:49:18.723889Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.738404Z","title":null,"venue":null,"work_id":null,"year":2025},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":16,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.738404Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:65c59840b3149b353359230061c5684569635b2b8a32a9de253413bfc1153636","observation_id":"1215a206-bf3a-409a-999a-b9d8236a410c","resolution":{"observed_at":"2026-08-09T13:49:18.738404Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.733273Z","title":"Herrmann, S","venue":null,"work_id":null,"year":2025},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":17,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.733273Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:b26ca6b30ca396f7ddbd10a406553482fb064030ab9669770b373247529dfb43","observation_id":"baadc511-01c6-4378-82a5-ec5e1df3d5fd","resolution":{"observed_at":"2026-08-09T13:49:18.733273Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.750247Z","title":"Jiang, L.-Y","venue":null,"work_id":null,"year":2025},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":18,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.750247Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:35276de76bcd4c2c954cc427630d7dbcfa97ef8e1e68cb2eca69ce8fbc34c829","observation_id":"9f25843f-3a0c-427d-a3b8-87cf30256d02","resolution":{"observed_at":"2026-08-09T13:49:18.750247Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.744392Z","title":"Zhang, J","venue":null,"work_id":null,"year":2025},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":19,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.744392Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:fae40d520b92f56de6b0d78dbdfeff44149e113ab2cb6be24a064c52598370fd","observation_id":"017cf1d7-09be-4091-9b9f-bc83a0a115f2","resolution":{"observed_at":"2026-08-09T13:49:18.744392Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.759671Z","title":"Gunawan, Y","venue":null,"work_id":null,"year":2006},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":20,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.759671Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:ad6331f9313a2acd140ad913885458b35eca12e7627b9bee896fb156f11e27db","observation_id":"2ae18d8f-a253-4eb0-a6bd-65cf3239d53e","resolution":{"observed_at":"2026-08-09T13:49:18.759671Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.755084Z","title":"ˇZuti´ c, J","venue":null,"work_id":null,"year":2004},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":21,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.755084Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:8124b1a151fe98d99f43a77173280c350596e4a84afde6e6510cd8fa4e51ee7d","observation_id":"b8459dda-c0ac-4541-b95c-f4a0ef916a02","resolution":{"observed_at":"2026-08-09T13:49:18.755084Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.769381Z","title":null,"venue":null,"work_id":null,"year":2018},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":22,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.769381Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:ba1c86015ffe715ba65a52546078b3a369b4c0e1cf785cf718062d72255309aa","observation_id":"3683f6f2-96a2-41ad-b8be-57cc1d21936e","resolution":{"observed_at":"2026-08-09T13:49:18.769381Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.764349Z","title":"Gokmen, M","venue":null,"work_id":null,"year":2008},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":23,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.764349Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:0120b48d34aa9aa2d3be2f88b54887a4f6b99fe507c3fc995aed126269dcf0f1","observation_id":"8040273a-1882-4fa9-bc0e-5e9c3666eb7b","resolution":{"observed_at":"2026-08-09T13:49:18.764349Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.778812Z","title":"Shen, W.-Y","venue":null,"work_id":null,"year":2017},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":24,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.778812Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:42e317c202b3fed030ac933d85beda05d3b2275e7f2f8e8f1bb909fc86030f88","observation_id":"61af6831-52ed-4991-a824-58aa9ccdb070","resolution":{"observed_at":"2026-08-09T13:49:18.778812Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.773932Z","title":"Tong, S.-J","venue":null,"work_id":null,"year":2016},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":25,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.773932Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:75dd5058f9131099a66c7d5dc31655780a3abcffbabb8060e65324de4b3082c1","observation_id":"01452631-bb87-4e7b-abb2-118cc3c8c4f3","resolution":{"observed_at":"2026-08-09T13:49:18.773932Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.788073Z","title":"Hu, W.-Y","venue":null,"work_id":null,"year":2020},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":26,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.788073Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:9ad670fc40e29e351bdc6338562ad72d6074d1c0b2a29819bedeb4758ffa8923","observation_id":"e6c5e23a-2626-4625-a6ce-3c5416432547","resolution":{"observed_at":"2026-08-09T13:49:18.788073Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.783551Z","title":null,"venue":null,"work_id":null,"year":2019},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":27,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.783551Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:d0110251bef4d82926e2d78573d886040d159554b4eccd161220e4a9e6a9b527","observation_id":"97ed3692-6f6c-4ef1-9f60-fa7a9bd716f5","resolution":{"observed_at":"2026-08-09T13:49:18.783551Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.797125Z","title":null,"venue":null,"work_id":null,"year":2012},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":28,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.797125Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:9d23257b71dfc05ababb7ee105a95c989ff1347231d1ce24ad81fa2edb9daf0c","observation_id":"cfb4fc33-dd4d-49d6-8958-cb86628fccb2","resolution":{"observed_at":"2026-08-09T13:49:18.797125Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.792693Z","title":null,"venue":null,"work_id":null,"year":2025},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":29,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.792693Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:364f3ebbb4002446d82d3beca581009322e167bb3cf976a1b74d8e0eb92bce1d","observation_id":"a38ae53a-554c-4248-8d92-8494effc9598","resolution":{"observed_at":"2026-08-09T13:49:18.792693Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.806380Z","title":null,"venue":null,"work_id":null,"year":2013},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":30,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.806380Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:1231a7bc307ccd77255070e1d34d8b985448f5b521acb8c85fa0e61d8aa90547","observation_id":"7a3d766b-6f48-4a23-ad59-b0fdf78c538f","resolution":{"observed_at":"2026-08-09T13:49:18.806380Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.801694Z","title":null,"venue":null,"work_id":null,"year":2012},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":31,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.801694Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:81c3d40c3d30ff3007f042cac80c88b817cfb2a284fcfeaa25cc7d80d705181d","observation_id":"ce7eb09d-9d33-445d-8e98-88aee543d907","resolution":{"observed_at":"2026-08-09T13:49:18.801694Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.816628Z","title":"Aivazian, Z","venue":null,"work_id":null,"year":2015},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":32,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.816628Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:5a5a0ff3eca289a60d80ae7146c0dd7c66bcacc98a9bbaab3147f3eeda20e12c","observation_id":"c73549b5-b4bd-4e47-b80f-26f022bc3a22","resolution":{"observed_at":"2026-08-09T13:49:18.816628Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.811462Z","title":"Suzuki, M","venue":null,"work_id":null,"year":2014},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":33,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.811462Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:c399fc570eb80754d4fd1b2ab7883417725bc2349ddf4111a717746b64f06077","observation_id":"ad5653cf-b3f4-44cf-9f3f-fc4f9d8daa2d","resolution":{"observed_at":"2026-08-09T13:49:18.811462Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.826938Z","title":"Zhong, K","venue":null,"work_id":null,"year":2017},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":34,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.826938Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:4a957ea2e4e3e2bd2753b42d87a4e61c0afb35968b76063e17e1b243481c89da","observation_id":"5ef60ea2-5a49-441f-b7dc-f67fad188a5a","resolution":{"observed_at":"2026-08-09T13:49:18.826938Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.821980Z","title":null,"venue":null,"work_id":null,"year":2017},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":35,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.821980Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:8aa0d856731553bc0a62c32cf0dba136b99e9718fa238d6cfb172860663647e7","observation_id":"58837b4f-2f37-4466-b7df-14995eadf54a","resolution":{"observed_at":"2026-08-09T13:49:18.821980Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.836393Z","title":null,"venue":null,"work_id":null,"year":2019},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":36,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.836393Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:db1723bf8d4ecca3b0f697d24c8b4b540ceff5bb15d250348a5dcbed6e327ab4","observation_id":"eef685c1-927d-41cd-844c-b74900b28e8b","resolution":{"observed_at":"2026-08-09T13:49:18.836393Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.831607Z","title":null,"venue":null,"work_id":null,"year":2017},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":37,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.831607Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:1bdb496093e1b5af1b9a004c901c9c339b14e12912007f2eb0dbf221250e3ab8","observation_id":"193eb419-df26-455c-a7f4-8dfbad82f720","resolution":{"observed_at":"2026-08-09T13:49:18.831607Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.845445Z","title":"Xiao, G.-B","venue":null,"work_id":null,"year":2012},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":38,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.845445Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:9a349f37eedd191e6d846757beddf8f56295541bb6afe1e8d9322cf2d7fab4d7","observation_id":"9762976e-40af-4902-bb7c-056c2b13a989","resolution":{"observed_at":"2026-08-09T13:49:18.845445Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.840963Z","title":null,"venue":null,"work_id":null,"year":2020},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":39,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.840963Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:383d1a97caa5d4a0dcae546e60fb0f08685beed77d0cabb0ba332403349962ab","observation_id":"9e1011b1-3954-4d8e-9c95-cdff8f26cd79","resolution":{"observed_at":"2026-08-09T13:49:18.840963Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.855388Z","title":"Gong, G.-B","venue":null,"work_id":null,"year":2013},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":40,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.855388Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:7b9e4555fa3e413dc37846cebd0527cf44408c7d4dba8f3a94f6d991ea96b4ac","observation_id":"aa13ed01-f2ec-4dfa-a514-f315d13ce0e2","resolution":{"observed_at":"2026-08-09T13:49:18.855388Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.850684Z","title":null,"venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":41,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.850684Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:aceb9f0b4e6985f0c0191802b2ddf3d8cd863b36cd4b6cab4e796f7eedfe9fae","observation_id":"a98ea04b-32c0-454f-b2da-34f3bc204cde","resolution":{"observed_at":"2026-08-09T13:49:18.850684Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.864920Z","title":null,"venue":null,"work_id":null,"year":2014},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":42,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.864920Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:24ccc872f48068a4701f7781260bf3dd59c7594b7253443734fb253f39ceefea","observation_id":"9d5aa6c9-9600-4160-9e45-251fc7ddd36d","resolution":{"observed_at":"2026-08-09T13:49:18.864920Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.860282Z","title":null,"venue":null,"work_id":null,"year":2013},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":43,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.860282Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:d08679bdcd14eb248e807b69a4b3f4af0ee4e04cc3b6ad1a09dc3f7c077e277e","observation_id":"d56bbe25-37b8-4496-9006-09fd70a11299","resolution":{"observed_at":"2026-08-09T13:49:18.860282Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.874557Z","title":"Shimazaki, M","venue":null,"work_id":null,"year":2015},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":44,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.874557Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:cac61b346f9c74ffa770fbf681ed7347f4fd943b42f8390d6cb4d2890177ccd0","observation_id":"e8f41368-8675-4da7-9ba1-e2e4a4826d8f","resolution":{"observed_at":"2026-08-09T13:49:18.874557Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.869375Z","title":null,"venue":null,"work_id":null,"year":2015},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":45,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.869375Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:0977c3b72c434018f39b80eaddb5881a2ee183ba28f21936f5afb803c730fb6c","observation_id":"2582f415-d911-404c-bcf8-5f7bfce0fdf2","resolution":{"observed_at":"2026-08-09T13:49:18.869375Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.883345Z","title":"Scuri, T","venue":null,"work_id":null,"year":2020},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":46,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.883345Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:5cb304260436755ca8d5faf03bbbfce23228e49b3eb95f12d9dcc4f60d7d6cf7","observation_id":"79b6183f-8a70-409b-b8c6-825870d74b15","resolution":{"observed_at":"2026-08-09T13:49:18.883345Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.878956Z","title":null,"venue":null,"work_id":null,"year":2016},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":47,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.878956Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:2a9f2d4a850c4d4c790879b8d3b20e96d94ac485737cec7ff3233655ba92cf40","observation_id":"422a4146-25ae-4558-87c8-57c3c3a3624f","resolution":{"observed_at":"2026-08-09T13:49:18.878956Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.892381Z","title":"Zhang, X","venue":null,"work_id":null,"year":2023},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":48,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.892381Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:9ca8f805a26d641523eb3bbbb0d7abaa558ac55de6a4a30b18e65166812aa3f0","observation_id":"f91acd49-a8dd-48d4-980c-e4bec9b1e21c","resolution":{"observed_at":"2026-08-09T13:49:18.892381Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.887637Z","title":null,"venue":null,"work_id":null,"year":2020},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":49,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.887637Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:926d3f15ccdc84b25b461b4cb91120b179e37e1d3512ed9c61d5fadbe65b0532","observation_id":"f47c5d24-3fb4-47cf-91dd-a71ffb0b4cad","resolution":{"observed_at":"2026-08-09T13:49:18.887637Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.901864Z","title":null,"venue":null,"work_id":null,"year":2006},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":50,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.901864Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:26c83e622da7d686cdb2dd1877dd30699c2b75c6d96ad6320c76bf5cd09d65d5","observation_id":"5b740856-ebf3-4f53-ba11-3de7422d5ddc","resolution":{"observed_at":"2026-08-09T13:49:18.901864Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.897165Z","title":"McCann, K","venue":null,"work_id":null,"year":2006},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":51,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.897165Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:fd991fa84ec627f7dc040b662381c6bfa5430733fc57d59e1bdcf9a659c196c7","observation_id":"37f92e6c-a44e-4d89-9d4f-bfd554e92dc2","resolution":{"observed_at":"2026-08-09T13:49:18.897165Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.911416Z","title":null,"venue":null,"work_id":null,"year":2017},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":52,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.911416Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:204fc860f9a36db2f6da676743ee1c4e0d9c5f908d066ff5d817eb191d2b8d52","observation_id":"6196a941-06d1-4da9-9673-a5ccf9abce15","resolution":{"observed_at":"2026-08-09T13:49:18.911416Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.906896Z","title":null,"venue":null,"work_id":null,"year":2006},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":53,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.906896Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:277f451fdf001654ec91f88cc4fedb391dcd52fd221774bd680d188097125006","observation_id":"bfae5e82-a01f-43a2-b52f-da8e790a0b78","resolution":{"observed_at":"2026-08-09T13:49:18.906896Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.920920Z","title":null,"venue":null,"work_id":null,"year":2018},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":54,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.920920Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:b6f8a34038baa7c4ba82c241a7cb06bc87ca3cb85c9f6750ad00b34fa81b5876","observation_id":"46ab0587-8a6f-4b11-8bb2-5d7eeee91c01","resolution":{"observed_at":"2026-08-09T13:49:18.920920Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.916198Z","title":null,"venue":null,"work_id":null,"year":2022},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":55,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.916198Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:47841a2eb21198112472854985b357ceb445eacdfb18e77a14f29ce7d58cb570","observation_id":"18b20d9e-2cf9-4fa8-9894-107618529c25","resolution":{"observed_at":"2026-08-09T13:49:18.916198Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.642027Z","title":null,"venue":null,"work_id":"b9b2e6df-50db-4403-b247-41502d05a96e","year":2018},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":56,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.930208Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:daba0a5bf5ea0822a4c7ead75f6265c0f8a03b71f3fcc581e50d80ff0df26bbe","observation_id":"f887c3a8-ac14-4738-8ef4-67554cbe4827","resolution":{"observed_at":"2026-08-09T13:49:20.646879Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:18.925619Z","title":null,"venue":null,"work_id":null,"year":2023},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":57,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.925619Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:54261fc5782d05d6c1869fa15e7f780f6b4bf7ac05fe30f4e3f47701e1147bef","observation_id":"5628a8e4-3714-4ae8-9fec-7c1044768f00","resolution":{"observed_at":"2026-08-09T13:49:18.925619Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"cited_work":{"arxiv_id":"2502.02057","doi":null,"metadata_source":"pith","pith_arxiv_id":"2502.02057","snapshot_observed_at":"2026-08-09T13:49:19.354067Z","title":"Valley Gapless Semiconductor: Models and Applications","venue":"cond-mat.mes-hall","work_id":"31653c49-ce4f-432a-8fee-8bcdd1985e38","year":2025},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":58,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.652528Z"},"links":{"cited_paper":"/paper/2502.02057","citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:50c5c5c73238e9c9d2c69d440e4980a8c43b20589a71b2323b723c6a40dbdcb6","observation_id":"c2c6ca99-6d13-4dbf-9496-d30e84bb33ad","resolution":{"observed_at":"2026-08-09T13:49:19.361044Z","resolver_source":"local_arxiv","status":"metadata_mismatch"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.625229Z","title":null,"venue":null,"work_id":"7af78887-81d4-40de-b2c2-71677d8dc872","year":2020},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":59,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.935507Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:ea9705cc8f184a46d8d5c7015a11043ef52fde4ea7efae2d03e1b503dac980dc","observation_id":"c900a366-c583-46a9-95f8-1d82f14780cf","resolution":{"observed_at":"2026-08-09T13:49:20.631106Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.609990Z","title":null,"venue":null,"work_id":"55ca0260-5d68-4c47-bf76-7dfc28dcb01f","year":2020},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":60,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.940176Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:e0446fcf58d13a766ed8174fa287f0d3c660bad6750c294582cad081748e5d9f","observation_id":"112968e3-34a3-4840-87c8-76e81ccd8c75","resolution":{"observed_at":"2026-08-09T13:49:20.614792Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.594134Z","title":null,"venue":null,"work_id":"ce30724c-dab4-4a41-8bc4-fc3e6f8d7936","year":2015},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":61,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.944798Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:f5a6e4512f2a152d739e6a89674a9f90104b14c2a975484d3ad41409e1cb6686","observation_id":"aedccc3c-22e6-402a-a097-a08d5ff9bb01","resolution":{"observed_at":"2026-08-09T13:49:20.599553Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.576868Z","title":null,"venue":null,"work_id":"31950c9e-ae17-4615-a406-e9f090dd5970","year":2017},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":62,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.949267Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:641d88c04a0a935871584184629f88d15b4c7bc77f21a0ed38d0c787f13d5ce3","observation_id":"4052eab2-23b9-43b5-8cd9-3ebbfff93271","resolution":{"observed_at":"2026-08-09T13:49:20.582520Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.560970Z","title":null,"venue":null,"work_id":"63ad8fa1-66a1-44c9-844d-06da112caed0","year":2011},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":63,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.953853Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:8b2274e135fa7fac15190f568d3807c2d1050c681e2cdf41d74291ff71540926","observation_id":"e380e470-3baf-4c27-9a29-a402eda8bcf2","resolution":{"observed_at":"2026-08-09T13:49:20.566447Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.546068Z","title":null,"venue":null,"work_id":"a2ed2c0d-6e93-4311-917b-8559c55dea26","year":2019},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":64,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.958443Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:567fccefa8398c6932f2a023bc20755b11810f6608d7b34c69edc3e2e4282705","observation_id":"838a34d6-adfb-4635-aa23-6e83588c9a7a","resolution":{"observed_at":"2026-08-09T13:49:20.550828Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.530846Z","title":null,"venue":null,"work_id":"dd2f7daf-5bd5-4e8e-a38d-b9bff13028b0","year":2023},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":65,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.963243Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:6df12f727e6f0abf259029f05aa740455a90d37bd82e111d4fc6676202f2aee0","observation_id":"da815ee4-73a1-4c8f-a879-77a9a385d6d0","resolution":{"observed_at":"2026-08-09T13:49:20.535601Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.515206Z","title":null,"venue":null,"work_id":"fee4b7b9-5a9a-49d7-9b5a-11296b7b4f70","year":2023},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":66,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.967854Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:9644efa80f4b757a1ec0ece9b0f973bde7333f435361b6f7ae3a4e6a97a3eb18","observation_id":"9dc97947-90e6-4abe-8d80-ed6e33a1c996","resolution":{"observed_at":"2026-08-09T13:49:20.520039Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.499124Z","title":null,"venue":null,"work_id":"35bfdd44-bf55-46e3-b7ac-5607022b6a1a","year":2024},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":67,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.972576Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:c4c06987b615293c1ba354d276bb0ffe7405165d3e2e2cc614b2ac0036cf4607","observation_id":"f2b76fd8-2cd2-4925-b37a-d10eaead8457","resolution":{"observed_at":"2026-08-09T13:49:20.503871Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.483515Z","title":null,"venue":null,"work_id":"59fbc512-1a2d-4fcf-ba03-42505067608b","year":2007},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":68,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.977077Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:c1f096353d8af0c51499d338e1d7731aa4ebe84a573b8e5dacaf506102235b5d","observation_id":"15362b80-aa0c-4081-b1ab-4b7f87f7ebf4","resolution":{"observed_at":"2026-08-09T13:49:20.488283Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.468127Z","title":null,"venue":null,"work_id":"24ca67c7-53e4-4039-b4c2-154f7fc7fd49","year":2024},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":69,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.981481Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:fc36cbe89de22137a11429a2ab278718b121685727f3366623a76a59521bb4fa","observation_id":"96534ad5-f683-4008-8704-108449060e45","resolution":{"observed_at":"2026-08-09T13:49:20.473089Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.452697Z","title":"Ghadimi, C","venue":null,"work_id":"390877d7-1dee-474e-a252-f35535a4eb93","year":2024},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":70,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.986317Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:7e7cf49916a42ca95e4a4e9f72ded165c0da683e5da8d8b53c8d706832e2ebf7","observation_id":"5bf5115a-581a-4f8b-b9ab-66854541f2f4","resolution":{"observed_at":"2026-08-09T13:49:20.457661Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.437084Z","title":"Zhang, D.-F","venue":null,"work_id":"70d95d21-9965-43fd-95c3-af075fb1ef15","year":2023},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":71,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.991099Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:7b3b86e0ccd9f9f935c1c1db27eec24ca2616d8f9f5aabf24a72d30f56cffe95","observation_id":"ab055e22-c656-451a-875c-847247540dac","resolution":{"observed_at":"2026-08-09T13:49:20.442046Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.421696Z","title":null,"venue":null,"work_id":"8b5934d8-88d8-464a-a982-2e4198deec94","year":2017},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":72,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:18.995891Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:7724226314f2f55d2c0dc079fd8a3f730b100b4b43aadb4f1c8d8ac3f495d746","observation_id":"cf4542c3-e3b5-4379-8816-2a2146ec0a82","resolution":{"observed_at":"2026-08-09T13:49:20.426600Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.403984Z","title":null,"venue":null,"work_id":"f16c6c9c-c72d-483e-97ba-7eca78606a9e","year":2014},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":73,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:19.000654Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:34e1fdf73cbfc89df7c27749a8ec6974304f2d3b6938e3c06252469704e6df0a","observation_id":"b647903f-6267-4cf1-86ba-b53ccce791fc","resolution":{"observed_at":"2026-08-09T13:49:20.409500Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.384824Z","title":null,"venue":null,"work_id":"5cf4d771-e376-4f6f-aee7-121492cd6640","year":2015},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":74,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:19.005178Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:c89e0ea56370dcf102db94f7602402929e9df2830403da28c0e2da97565365a3","observation_id":"65a10d27-fdc0-4ca1-be85-570c4c53c5d7","resolution":{"observed_at":"2026-08-09T13:49:20.391736Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.362605Z","title":null,"venue":null,"work_id":"49c86a90-0bf5-4c55-914d-41dea82ac7e3","year":2015},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":75,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:19.010282Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:ac332addab6e2283f2b0c4827d968979c31214aa074d562dca87e725702543c0","observation_id":"fc55cd57-dd34-42bd-918c-20aa4c73c526","resolution":{"observed_at":"2026-08-09T13:49:20.370122Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.339942Z","title":"Rycerz, J","venue":null,"work_id":"a90a0185-0a4b-4aed-9cb0-7465dbec2d32","year":2007},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":76,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:19.015613Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:f61f39950075e51948419de4d38c06273d99471fb67d5e59dc67a5f79447afef","observation_id":"379e62fe-2ad6-48fd-a5dd-aafd98dcc0dc","resolution":{"observed_at":"2026-08-09T13:49:20.346362Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.321286Z","title":null,"venue":null,"work_id":"00387d17-21d7-402b-8a11-cd9678533b2b","year":2008},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":77,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:19.020310Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:adaeb3b6057d388dccaba47a15544b84b57c50a2cd20bb3270f392ccc20dea8f","observation_id":"4058c25d-ea55-46ee-a8fb-54f7503655fb","resolution":{"observed_at":"2026-08-09T13:49:20.327025Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.303611Z","title":"Guo, Y.-L","venue":null,"work_id":"1b4abb7d-6958-49ec-9cd5-6691b1638b4c","year":2024},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":78,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:19.024794Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:bd9d7edb094f4738e710dc155d0a8e0365f807562297a3f28eed9d6c437ceea2","observation_id":"a329fd61-fc5e-419a-b3eb-42f8128692eb","resolution":{"observed_at":"2026-08-09T13:49:20.309105Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.286277Z","title":"Krizman, J","venue":null,"work_id":"f140b73a-9a20-40bd-a5a2-7ec2b602b0a1","year":2024},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":79,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:19.029278Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:0e13a061695829da8095916a1afc8244289fdbf7e7227a4530d338f537080a60","observation_id":"66feefb0-d2ff-4274-8406-8c0a05f9031d","resolution":{"observed_at":"2026-08-09T13:49:20.291789Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.266575Z","title":null,"venue":null,"work_id":"aa8f149a-a04d-4866-9e28-40942d59a701","year":1988},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":80,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:19.033989Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:d7015e8bc17975d0ec4317e73ad4705ad198006256c394331cdc69c545e4ca21","observation_id":"0a2be00f-6dca-4f12-8196-f23e60cdafa4","resolution":{"observed_at":"2026-08-09T13:49:20.273449Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.249506Z","title":"Colom´ es and M","venue":null,"work_id":"ce7a23ea-9f61-4969-9040-03f5a341b695","year":2018},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":81,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:19.038463Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:0f108cf2383f899c4fa998aa363f2e8ab773c2686ac650ac4608adf189d669d2","observation_id":"9edf4cc2-e1aa-4aa3-b437-4257035e3693","resolution":{"observed_at":"2026-08-09T13:49:20.255023Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:19.043086Z","title":"Qi, Y.-S","venue":null,"work_id":null,"year":2006},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":82,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:19.043086Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:aed0a8b8fa7b786dc22a20c47e04a3ffb61e2a1da9e8da0c66ab6242a35afedf","observation_id":"91cf7c6b-029d-486e-86fe-3714d787eecc","resolution":{"observed_at":"2026-08-09T13:49:19.043086Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.216440Z","title":"Ezawa, Spin valleytronics in silicene: Quantum spin Hall–quantum anomalous Hall insulators and single- valley semimetals, Phys","venue":null,"work_id":"0fa7fd20-1ec8-4f50-a573-bbabdfadb663","year":2013},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":83,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:19.048086Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:f8461a5131dacb3b509f1512b575f680d172fa2e6ce3fb1d3d34936c3c61d7dd","observation_id":"3392b490-0832-4301-b288-d7681a8b6e0a","resolution":{"observed_at":"2026-08-09T13:49:20.222849Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.199034Z","title":"Jotzu, M","venue":null,"work_id":"a6ee8129-3aec-4b18-92b0-449c3d95d5c3","year":2014},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":84,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:19.052829Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:35322c081548d88117acca9b5019c0d5b3fba29e634cefd9598afc0f22a7582f","observation_id":"1693ef9f-d87d-4ebb-b10d-60b05b857676","resolution":{"observed_at":"2026-08-09T13:49:20.204581Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.177100Z","title":null,"venue":null,"work_id":"f23a7988-17f0-485d-a891-fdc73340914b","year":2020},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":85,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:19.057357Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:7c72cf7b495049c277b63144446739412f6aae2fbd6891cb0f96c3261b12726f","observation_id":"38a24857-e817-4f7a-bc39-f74daf2c3469","resolution":{"observed_at":"2026-08-09T13:49:20.182251Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.159649Z","title":null,"venue":null,"work_id":"bb09ae41-4fdd-49a0-8df3-7abb67f0d072","year":2021},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":86,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:19.062105Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:03ed3cd50feb0f5dc06014279cbdd5f0584f71bc1693cb355d276e3857231cfe","observation_id":"7f614ede-7419-4d26-9603-d2ba9605da76","resolution":{"observed_at":"2026-08-09T13:49:20.165333Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.141519Z","title":"Zhou, G.-G","venue":null,"work_id":"730e1612-6421-47bf-8af6-f5ad1f5cd76f","year":2020},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":87,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:19.070165Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:cdb17c90fc555bc65a7ee970c6332dffd7be5c17b9dea1ac5e944d850ac4ac21","observation_id":"c1ec8bcd-07eb-4486-bc41-2ca28c234262","resolution":{"observed_at":"2026-08-09T13:49:20.147973Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.124193Z","title":null,"venue":null,"work_id":"da29c1f7-d462-4c65-8245-82773a31faf7","year":2021},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":88,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:19.075063Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:b2051a3af61a9739487f55d87fbaddfb4a228388829b0915e9dd9123b3cce9fa","observation_id":"b9d486fc-d6dd-46a4-82a9-783754f08908","resolution":{"observed_at":"2026-08-09T13:49:20.129502Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.107014Z","title":null,"venue":null,"work_id":"88596d4d-800b-4f3a-9ac4-0fa93703ff3b","year":2019},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":89,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:19.079591Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:2167e2f74ca06de1c07a03a6c972e3941444fe5c84f1811719e1a36ec095c2b9","observation_id":"ff67b7c8-462e-467d-a136-c012df493a6f","resolution":{"observed_at":"2026-08-09T13:49:20.112137Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.090482Z","title":"Ezawa, Photoinduced Topological Phase Transition and a Single Dirac-Cone State in Silicene, Phys","venue":null,"work_id":"1776f667-d359-4980-a0ba-0d518c871dc4","year":2013},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":90,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:19.084049Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:51e6642bb655a064b2a1220e4d4a118ca13568bc21096852228bae3c87f16923","observation_id":"fd00f895-6cb9-4458-b102-3ca085617216","resolution":{"observed_at":"2026-08-09T13:49:20.095774Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.072999Z","title":null,"venue":null,"work_id":"0539c5a1-a227-49ae-9ac1-cec84ddd487c","year":2024},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":91,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:19.089268Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:59a8cc2516f0fb3b61c0989cd1fda08e658fca1a5e01bde80e8ad1736894d781","observation_id":"48de1622-a564-4f82-b6dc-924e1c97d02d","resolution":{"observed_at":"2026-08-09T13:49:20.078416Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.056759Z","title":"Mitra, ´A","venue":null,"work_id":"2afeadfe-844b-4f48-a03a-c58e5918c8ff","year":2024},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":92,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:19.094061Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:2b1d90c4df8e3b1550e9bc22db69f17549def3b2ae2621196e2d6bfa4948067a","observation_id":"5ed30755-7ab8-434a-a2e3-54146e05183a","resolution":{"observed_at":"2026-08-09T13:49:20.061896Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:19.098647Z","title":"Oka and H","venue":null,"work_id":null,"year":2009},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":93,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:19.098647Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:265364d76cac68a5a2ebf80691af28cfe7a2d751b2432e9521f12c1ccef35ef1","observation_id":"4802add6-5d25-424a-8ec6-c4aa28395963","resolution":{"observed_at":"2026-08-09T13:49:19.098647Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.029019Z","title":"Hofmann, T","venue":null,"work_id":"3ea9e723-63a3-49bb-81f3-ee5e84b0552c","year":2019},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":94,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:19.103077Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:170b8af050339cc9dde04b5f2ea98623cffe08bee314110eca6c2506d1861053","observation_id":"5cdcba11-8c28-45be-b0ce-346405e8dcd6","resolution":{"observed_at":"2026-08-09T13:49:20.034052Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:20.010273Z","title":"Liu, F.-L","venue":null,"work_id":"5ff052e5-be81-4435-a541-865357f9c1a3","year":2023},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":95,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:19.107460Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:05aef3d34354d28cf785e3eb6587807d4aa94189b1cf07f69bd4d5f8b2262fb6","observation_id":"f8098f98-7919-4f9d-8ca1-8beb9345a1ff","resolution":{"observed_at":"2026-08-09T13:49:20.017491Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:19.993536Z","title":null,"venue":null,"work_id":"3a711616-3168-4591-b0a3-2fc3bc091245","year":2023},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":96,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:19.111793Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:4d7d2334a22b2a7f15372ab7d2d2c82ed47d7d710d461f0342f01b823b9317af","observation_id":"9334259c-4127-48a2-a639-790d889503ee","resolution":{"observed_at":"2026-08-09T13:49:19.998599Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:19.975171Z","title":null,"venue":null,"work_id":"56d6f231-0251-414d-b324-aad8f59e18a9","year":2013},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":97,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:19.116535Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:c325e0bc86eefe5b1332ac63e46cb481876457660553d01e43d2b8b64d1d91f3","observation_id":"b4c34267-dd4a-4579-8225-881fa51b5452","resolution":{"observed_at":"2026-08-09T13:49:19.981612Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:19.956050Z","title":null,"venue":null,"work_id":"43d7fbd5-9628-4032-8f9e-36b00a909c6d","year":2018},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":98,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:19.121084Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:c4e06742286bc4367a0b22f917df16ad673c835fdb8b75aeceba7bfa941168ce","observation_id":"d87e3b7b-2871-4b77-bec5-946b3ad84771","resolution":{"observed_at":"2026-08-09T13:49:19.962335Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:19.939868Z","title":"Cheiwchanchamnangij, W","venue":null,"work_id":"eb562a90-2d91-4589-91da-4490df7c36f7","year":2013},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":99,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:19.126132Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:195154144a8780d0397ce0bbc47608f0d7c95bd901118f3a76d76d2bd313195d","observation_id":"73fa5906-c663-45f2-8895-ec8099512891","resolution":{"observed_at":"2026-08-09T13:49:19.944767Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T13:49:19.924118Z","title":"Fujita, M","venue":null,"work_id":"a4d76ae6-5b76-4dcc-bc26-ac915f0e55bd","year":2010},"citing_paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications","version":3},"reference_index":100,"source":"pdf_text","source_observed_at":"2026-08-09T13:49:19.130683Z"},"links":{"citing_paper":"/paper/2502.02057"},"observation_digest":"sha256:dd1dfd8ea04ad8754ce8c7e513bd69c42a7aadc7b763254acd62011374972669","observation_id":"698a38c9-9cf1-4aa3-86a6-02bf3a4a9f0f","resolution":{"observed_at":"2026-08-09T13:49:19.929612Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"state":"measured"}}],"paper":{"arxiv_id":"2502.02057","last_updated":"2025-05-24T14:12:59Z","latest_version":3,"primary_category":"cond-mat.mes-hall","snapshot_observed_at":"2026-08-09T13:29:07.349298Z","submitted_at":"2025-02-04T06:55:12Z","title":"Valley Gapless Semiconductor: Models and Applications"},"reference_resolution":{"displayed":100,"state_counts":{"malformed_identifier":0,"metadata_mismatch":1,"parse_uncertain":0,"unresolved":84,"verified_exact":0,"verified_fuzzy":15},"total_outbound_references":136},"refusal":"A citation records a reference. It does not transfer a finding from one paper to another.","schema":"pith.paper-citation-record.v1","standing_sources":[{"observed_at":"2026-08-11T06:34:44.6726+00:00","source":"crossref"},{"observed_at":"2026-08-11T06:34:36.301508+00:00","source":"retraction_watch"}],"thesis":"As of 11 August 2026, this Paper Citation Record lists 100 of 136 outbound references and 1 inbound Pith citation observation for arXiv:2502.02057."}