{"as_of":"2026-08-20T11:53:00Z","caps":{"database_statements":6,"inbound":100,"outbound":100},"context_digest":"sha256:c56a498231d7c8ad39c6f41efb05ceff0c6fe3731b1cf25ba9bc9970e73ecb1d","coverage":[{"denominator":69,"lane":"reference_resolution","note":"Typed states for the displayed outbound observations.","records_observed":69,"source":"paper_references, paper_reference_links","source_observed_at":"2026-08-15T21:17:00.692390Z","state":"measured"},{"denominator":72,"lane":"standing_notices","note":"One-hop event checks from named stored sources.","records_observed":72,"source":"scholarly_work_events, retraction_status_cache","source_observed_at":"2026-08-20T06:33:59.587034+00:00","state":"measured"},{"denominator":3,"lane":"inbound_itemization","note":"Pith citing papers itemized under the disclosed page cap.","records_observed":3,"source":"paper_references, paper_reference_links","source_observed_at":"2026-08-02T18:39:55.584030Z","state":"measured"},{"denominator":1,"lane":"external_citation_measurements","note":"A source-named dated measurement, never combined with another source.","records_observed":0,"source":"arxiv_reference","source_observed_at":"2026-07-01T13:05:44.136565Z","state":"measured"}],"external_citation_measurements":[],"inbound":[{"citation":{"cited_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":"2505.10435","snapshot_observed_at":"2026-08-02T18:39:55.584030Z","title":"Lainé, G","venue":null,"work_id":null,"year":2025},"citing_paper":{"arxiv_id":"2603.07806","last_updated":"2026-07-19T09:03:13Z","snapshot_observed_at":"2026-08-15T11:30:34.028088Z","submitted_at":"2026-03-08T21:18:26Z","title":"Four-state discrimination for a pair of spin qubits via gate reflectometry","version":2},"reference_index":63,"source":"pdf_text","source_observed_at":"2026-08-02T18:39:55.584030Z"},"links":{"cited_paper":"/paper/2505.10435","citing_paper":"/paper/2603.07806"},"observation_digest":"sha256:00cf47cff6221a9102068d1f1099abb11a86d34e30fa6e3a4c823b00c72b9079","observation_id":"e691444f-d9de-4773-9ecd-cfea175b07dd","resolution":{"observed_at":"2026-08-02T18:39:55.584030Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"cited_work":{"arxiv_id":"2505.10435","doi":null,"metadata_source":"arxiv_reference","pith_arxiv_id":"2505.10435","snapshot_observed_at":"2026-07-01T13:05:44.136565Z","title":"Lainé , author G","venue":null,"work_id":"375cf26c-6e7e-4f5c-bf37-6da50058d723","year":2025},"citing_paper":{"arxiv_id":"2606.30883","last_updated":"2026-06-29T20:17:41Z","snapshot_observed_at":"2026-08-14T09:10:53.623988Z","submitted_at":"2026-06-29T20:17:41Z","title":"Overcoming Configuration Bottleneck: Modular Pathways to Stable Semiconductor Spin-Qubit Arrays","version":1},"reference_index":2,"source":"arxiv_source","source_observed_at":"2026-07-01T01:20:14.786115Z"},"links":{"cited_paper":"/paper/2505.10435","citing_paper":"/paper/2606.30883"},"observation_digest":"sha256:fb990b992f4a4e1e040df470c2c26fb2a51a369ef40d7e5a2ea2b83db9eee8d6","observation_id":"284775a1-5f5a-4e67-aa35-25746a0eb146","resolution":{"observed_at":"2026-07-01T13:05:44.138739Z","resolver_source":"arxiv_id","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":"2505.10435","snapshot_observed_at":"2026-08-01T06:58:49.209576Z","title":"Lainé, G","venue":null,"work_id":null,"year":2025},"citing_paper":{"arxiv_id":"2607.21718","last_updated":"2026-07-23T18:02:20Z","snapshot_observed_at":"2026-08-17T05:59:13.065666Z","submitted_at":"2026-07-23T18:02:20Z","title":"Electron shuttling as a probe for charge defects","version":1},"reference_index":12,"source":"pdf_text","source_observed_at":"2026-08-01T06:58:49.209576Z"},"links":{"cited_paper":"/paper/2505.10435","citing_paper":"/paper/2607.21718"},"observation_digest":"sha256:120e3736d1e077cb1e70a3426a273358805348b20f5c3bc130c5fe40adaf8af0","observation_id":"81104738-63c4-4314-bb2d-7addc6474102","resolution":{"observed_at":"2026-08-01T06:58:49.209576Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}}],"links":{"evidence":"/evidence","html":"/paper/2505.10435/citation-record","integrity":"/paper/2505.10435/integrity","json":"/paper/2505.10435/citation-record.json","paper":"/paper/2505.10435"},"outbound":[{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.631952Z","title":"In the simplest case, we can model the data by assuming the two charge states correspond to two distinct spin states","venue":null,"work_id":"48e405da-7f07-41f0-af5b-f39934b29116","year":null},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":1,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.448022Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:d56f7beaf3011f780bb0fbfd501bf9c1af9de6544d9e499768526a3e0edde85b","observation_id":"69b1955f-cc44-4936-b583-2b2cf1889c8b","resolution":{"observed_at":"2026-08-15T21:17:01.636840Z","resolver_source":"raw_fallback","status":"malformed_identifier"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.618053Z","title":null,"venue":null,"work_id":"348f25d2-97c4-4d1a-b3ec-7678deca5b9a","year":null},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":2,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.452676Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:2555b881fd6d6206f5bf3b4cf26b9e20c4aee81e3ab11a7fe54d506371ce3a1c","observation_id":"5947273c-5d59-4e7b-8a38-3c4305df4007","resolution":{"observed_at":"2026-08-15T21:17:01.622852Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.604082Z","title":"8 and account for undecayed |T0⟩spin states, we can add a third distributionn T0 with probabilityP T0 whereP S +P T− +P T0 = 1","venue":null,"work_id":"96154a45-93ba-4b25-800b-78324ef865ce","year":null},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":3,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.456627Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:7e170480f90860d9ff21ef5d44f1c1f6dc5da9589f39d7582242300dc900e5f1","observation_id":"b8235b0e-2945-4155-9e87-c6666f6e08db","resolution":{"observed_at":"2026-08-15T21:17:01.609047Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.590200Z","title":"The signal is averaged over a set integration time (t read), and the spin state is determined by comparing this average to a predefined threshold [30]","venue":null,"work_id":"35f4a099-a3b3-496f-bbc0-a45cb9ddedda","year":null},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":4,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.460555Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:47ad20a57e93ceebc7c35361512a5ae6a457f58e89d11038f36fbd1ae6d254bd","observation_id":"ec19d88d-8582-468d-8d83-951fdcf5a40a","resolution":{"observed_at":"2026-08-15T21:17:01.594972Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.576653Z","title":"A HMM can model the hidden states (e.g","venue":null,"work_id":"fe69ffd4-aecc-419e-a0b8-5013f74c1d5a","year":2020},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":5,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.464494Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:3a4c52f85b97b330a9070024f51759777d38a5d0ca84e618cf3fb2c4003b3d92","observation_id":"012260cc-dffa-4766-93d2-afd2d08138c5","resolution":{"observed_at":"2026-08-15T21:17:01.580959Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.561565Z","title":"For|S⟩, the sensor emits a signal centred at ∆Vrf/V0 = 0 when the TLF is in the ground state (G)","venue":null,"work_id":"0cc8adb7-e86f-4042-9d06-59b7a4b010f8","year":null},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":6,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.468566Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:723cfe4bbbb0eb407fb2dad7a301476a7a31aba4abcb4d8a86c7ae09f9d31f89","observation_id":"2407d4c3-6820-41cc-b6ed-13e40e120a1d","resolution":{"observed_at":"2026-08-15T21:17:01.566708Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.545981Z","title":"These states incorporate both spin and TLF dynamics (see Fig","venue":null,"work_id":"aa336e4a-902a-4881-bfad-8a8c83eb6f7d","year":null},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":7,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.472400Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:ee1c969e3e912426a0cf14dfb0252b8e61c84575aecfb23f58ee5e24ac69356f","observation_id":"65d04d1d-7577-4f1e-93f0-8467fae29167","resolution":{"observed_at":"2026-08-15T21:17:01.550600Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.531524Z","title":null,"venue":null,"work_id":"ea7407d0-dc04-4aa5-a138-2e71e39c691e","year":null},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":8,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.476975Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:42b95c8d112795b4ad810aaa11a037a6964520bfdead43112ab6b33e118df127","observation_id":"f23ca278-9dd2-461c-bfc9-e24e9ee7dc58","resolution":{"observed_at":"2026-08-15T21:17:01.536693Z","resolver_source":"raw_fallback","status":"malformed_identifier"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.517301Z","title":"Laucht, F","venue":null,"work_id":"7d365654-051b-406a-8071-8432929c15eb","year":2021},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":9,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.480468Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:9c15b8b20e3a5cee84f90be6107db76baf707a488d356a1d4b260a9c4e1250a8","observation_id":"ea603bc4-4dc8-419c-8403-742f186645eb","resolution":{"observed_at":"2026-08-15T21:17:01.521671Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.503572Z","title":null,"venue":null,"work_id":"cb933204-af73-40be-947d-655582390905","year":1987},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":10,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.484248Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:4c0e3959a0c068b8681a14e8601ecf088b356feee45c938626157f4d252266a3","observation_id":"4bd5bf76-bbff-48f6-a891-799b5e9249f8","resolution":{"observed_at":"2026-08-15T21:17:01.507872Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.489075Z","title":null,"venue":null,"work_id":"faedd8db-2db5-4d49-89c7-1273c4daadde","year":2007},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":11,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.488016Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:febeaadf7e4ad1e6cbfb4992b210c7ad2642097dc63ac6f57f3102f8f85d3434","observation_id":"6cc4f6f3-dce2-466a-8c9c-5ad1a8acbbf0","resolution":{"observed_at":"2026-08-15T21:17:01.493528Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1002/adma.202003361","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-16T11:08:47.750906Z","title":"Kranz, S","venue":"Advanced Materials","work_id":"c5e39ac7-bbff-4fc9-8781-b16b70388e82","year":2020},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":12,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.491743Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:9dc6c12bf21e1282a55d394f44be3f851654ac450bdd1f1465446e3c23e2b68f","observation_id":"9136ff5f-d85f-47a6-9add-cdce54c5a0c1","resolution":{"observed_at":"2026-08-15T21:17:00.881020Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1038/ncomms7084","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:00.865181Z","title":null,"venue":null,"work_id":"af2d170e-1e41-45c2-bb25-c9049c51ef44","year":2015},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":13,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.495733Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:a80fc37a96555a0385d834d6f559b881d7c824eb17ebd5ce51e846744808cd7e","observation_id":"03ff0123-472c-4754-a8a6-7ba0732390e7","resolution":{"observed_at":"2026-08-15T21:17:00.868838Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.474231Z","title":null,"venue":null,"work_id":"85c60ec6-501e-425f-8ae3-2573b43d0dff","year":2016},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":14,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.499659Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:e863d81e3144cbeb097177aac5e256cf94f84a59d0ed70e14e05c967083fe3bc","observation_id":"1d9f3919-3e04-41c9-be9e-89edcc40282a","resolution":{"observed_at":"2026-08-15T21:17:01.478416Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.460142Z","title":"Gate-based high fidelity spin readout in a cmos device,","venue":null,"work_id":"abc4d88e-92e0-4927-8a99-ed596a70e704","year":2019},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":15,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.503109Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:6f4282f7e39c639ebddcaba49d573d14a01bf056cc7d2a00464d1d3824e75264","observation_id":"fa94162f-bb2b-4a48-88dd-5c7e1ec62afd","resolution":{"observed_at":"2026-08-15T21:17:01.464576Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:00.506765Z","title":"Ansaloni, A","venue":null,"work_id":null,"year":2020},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":16,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.506765Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:61f30d0cda731a7b99ef7afa977895880affdba68c11d0bf43c0307b632e9379","observation_id":"45c626f6-32f2-4a29-a5b6-e86f642f495b","resolution":{"observed_at":"2026-08-15T21:17:00.506765Z","resolver_source":null,"status":"malformed_identifier"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:00.510369Z","title":null,"venue":null,"work_id":null,"year":2021},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":17,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.510369Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:defdb7b1dd34c7f90371a46af1e996469c05fdd9a6f9220460363c304d2c9d9d","observation_id":"ec928d0f-c190-4430-8cb3-1d4bbee056de","resolution":{"observed_at":"2026-08-15T21:17:00.510369Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.446188Z","title":"Oakes, V","venue":null,"work_id":"f8d4f9e6-fead-4df4-a3fb-b2bc5af76151","year":2023},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":18,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.513857Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:d514294d83a8c822c15ea361ca179e57205931f2adf22626b0eb8b820e4d74fe","observation_id":"f0c4871f-d5ab-45ed-8a55-f6f87532b432","resolution":{"observed_at":"2026-08-15T21:17:01.450537Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:00.517314Z","title":null,"venue":null,"work_id":null,"year":2022},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":19,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.517314Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:78509b2c068b8d5a76653472a19f5d1c81a04fd14435a75cca804680bdcdadfa","observation_id":"404710bb-71c0-432e-a60d-59cf020f9d43","resolution":{"observed_at":"2026-08-15T21:17:00.517314Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.432656Z","title":null,"venue":null,"work_id":"0f8d87c5-2985-4da2-b99e-86904829ea40","year":2023},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":20,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.520772Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:8b77cbf1579e5420e32a3d8f805646828748f0efeaa002a2cf1544eb06a02c6b","observation_id":"bd632a7c-829c-4cfd-a61c-2325c3be037d","resolution":{"observed_at":"2026-08-15T21:17:01.436948Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:00.524540Z","title":null,"venue":null,"work_id":null,"year":2023},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":21,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.524540Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:5075ac656bccd08fb9e833516707e7852940d79ae75167bbb37b26e07910921c","observation_id":"81147bce-0d75-4b3d-9685-e3588ed7cda5","resolution":{"observed_at":"2026-08-15T21:17:00.524540Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:00.527908Z","title":null,"venue":null,"work_id":null,"year":2021},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":22,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.527908Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:df546a892c4df188efe6e3c7a60b5c1d4f0574b230b2bcb52f55b40a3c3ddff9","observation_id":"7558a84d-845e-45a4-894f-612daaf60998","resolution":{"observed_at":"2026-08-15T21:17:00.527908Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.410008Z","title":"Silicon spin qubits from laboratory to industry,","venue":null,"work_id":"f7317e27-9cb3-4735-bcc2-c311be4d5cd3","year":2023},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":23,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.531197Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:9384176b6351c619bab32b5a62870283cfbddcd2c284686c98d28575ce54991f","observation_id":"37729944-f833-4a22-8543-3d11526ed2b1","resolution":{"observed_at":"2026-08-15T21:17:01.414461Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.397208Z","title":"Veldhorst, H","venue":null,"work_id":"d0047433-b93d-41af-874d-da15c5bc80d9","year":2017},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":24,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.534695Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:8385a543e5646db2511fefe3a4f9662207d6de9ca306c27e3a9494dfdb0c0f2b","observation_id":"a03e452d-b710-4067-a281-18a151980aca","resolution":{"observed_at":"2026-08-15T21:17:01.401181Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:00.537987Z","title":null,"venue":null,"work_id":null,"year":2018},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":25,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.537987Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:2a28459411a19a459a7cb8f4e4997278bfd63c5b1cdd47b4f65db73b06ed53c3","observation_id":"97ac3f0b-00a7-4338-98ce-7aabca849f94","resolution":{"observed_at":"2026-08-15T21:17:00.537987Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:00.541788Z","title":null,"venue":null,"work_id":null,"year":2022},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":26,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.541788Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:ab4b95a08b02e0b71bf3a9d9e9af2532f3efa97eccad3c5d67a22fad55c7eeee","observation_id":"987ca40e-42fe-4de7-a935-15dabe15dc34","resolution":{"observed_at":"2026-08-15T21:17:00.541788Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.383972Z","title":"Siegel, A","venue":null,"work_id":"b6e026ca-039f-40bc-b39e-2981405f5218","year":2024},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":27,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.545096Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:2bae4e1a4f4a200add888271a6e5e21c18c1e82a99fc0c660c4e487bfaa77649","observation_id":"0b2bde80-cd2e-4c9b-a51f-1ee45a1b1eaa","resolution":{"observed_at":"2026-08-15T21:17:01.388241Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:00.548353Z","title":null,"venue":null,"work_id":null,"year":2021},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":28,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.548353Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:8be477d8d6ca398a333ad2526719ae4a28caf7495498aa62a15a81d49ac7ad62","observation_id":"facdb7ee-a1b2-41c7-b54c-90c2e8f48e0d","resolution":{"observed_at":"2026-08-15T21:17:00.548353Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.370661Z","title":null,"venue":null,"work_id":"9872e41b-e909-4b9d-88f0-55c0f1f35a29","year":2013},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":29,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.551924Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:e3fcaff781924345a4820f4f5779c231fba1f04a68f2c272b16bc9f789e0b60a","observation_id":"a18fa612-e3ed-4124-8f1a-0bb4ca926a20","resolution":{"observed_at":"2026-08-15T21:17:01.374894Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.358240Z","title":"Spence, B","venue":null,"work_id":"6e2183d0-f965-4c75-8abe-160a92813a1e","year":2022},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":30,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.555383Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:1a8b3ac5b062bb49bc0e059c7c5f44e1ffcb34cd4488e767c59f1201b6a679a9","observation_id":"73143064-494f-4bbb-94e2-8d803a29784d","resolution":{"observed_at":"2026-08-15T21:17:01.362034Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.344834Z","title":null,"venue":null,"work_id":"8ea40575-e9da-4e70-bc97-96c64d755596","year":2012},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":31,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.559214Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:d2e78c7cc469266371ed6c6365691f30b9260e5f533e6ae0afcb5e1db02167b3","observation_id":"1133d9c5-2d05-42c7-9f22-65e9fb2fd941","resolution":{"observed_at":"2026-08-15T21:17:01.349297Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.331673Z","title":null,"venue":null,"work_id":"0ef3f0c6-de8c-4b11-a8b7-a0b3df92c8ff","year":2020},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":32,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.562771Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:68657fc4dd9ff3467bb061656e2623ac7f9fa80726a6e1eead4d769f6e1eb786","observation_id":"7dd0cc9a-4d1e-493c-a8a5-48516f901b83","resolution":{"observed_at":"2026-08-15T21:17:01.335774Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:00.566445Z","title":"Seedhouse, T","venue":null,"work_id":null,"year":2020},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":33,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.566445Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:494bfc9f73560224048a0d173ff66bc8a76ed05f15d165c98bcda89969f32d0f","observation_id":"df94d444-1449-414d-83ba-0bc318f31ec1","resolution":{"observed_at":"2026-08-15T21:17:00.566445Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.318141Z","title":"Knill, D","venue":null,"work_id":"31554eec-08d2-4c41-896b-046173aecd95","year":2008},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":34,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.570115Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:920b3341b3d092e71aece543b708873954c5359c107c193cbe7ce5cdefdce013","observation_id":"2c1c4b60-e933-4a63-9124-dadc116630ce","resolution":{"observed_at":"2026-08-15T21:17:01.322330Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.305478Z","title":"Mills, C","venue":null,"work_id":"db47fa23-64b9-4920-9b87-639fb8c01835","year":2022},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":35,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.573454Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:e57496bc3674b3b633f140b3f10deae802dbbdba233592e30caa3d188c346b7e","observation_id":"049ce274-6ac4-4cac-b09a-65d89e20369f","resolution":{"observed_at":"2026-08-15T21:17:01.309742Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.293031Z","title":null,"venue":null,"work_id":"e312ace4-6c8c-4855-a8b7-442af300cbed","year":2023},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":36,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.576947Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:1fec5149b3482cb394d146e3e8355d0f8db319d4f27de3d591b6e1c8a5fa1e20","observation_id":"f5e3e988-ea86-4244-84a1-d2e64049e219","resolution":{"observed_at":"2026-08-15T21:17:01.297153Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.279379Z","title":"Struck, J","venue":null,"work_id":"af1c3dc2-45ee-4758-be30-8ee84c1df3e6","year":2021},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":37,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.580363Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:85b43b6226a7c78f866ed1161060046ddc87f5c7553528eee6dfafea73f20fd8","observation_id":"430ceeb3-6fc5-4c75-bfe3-6f421d42f7fd","resolution":{"observed_at":"2026-08-15T21:17:01.284367Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:00.583808Z","title":"Barthel, D","venue":null,"work_id":null,"year":2009},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":38,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.583808Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:0ffb4f42a22de3271dceb1ce287314e83a09f113190b81053122aaac5ce8b30b","observation_id":"f5120f92-4b7e-4c24-b827-99a1d36f62c4","resolution":{"observed_at":"2026-08-15T21:17:00.583808Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:00.587697Z","title":"Gambetta, W","venue":null,"work_id":null,"year":2007},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":39,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.587697Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:553b42c72c4983eafe47cc5e2bae1995f4ce4d9a4f93a81f200ca40bfa35ea84","observation_id":"03f26eba-0c3c-4d1f-a7f0-952c1d202d1d","resolution":{"observed_at":"2026-08-15T21:17:00.587697Z","resolver_source":null,"status":"malformed_identifier"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.265788Z","title":null,"venue":null,"work_id":"084ea674-1fe7-4a7d-9aa0-c3e11517b28b","year":2024},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":40,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.591066Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:a15c71662f21a8c7d7bb8669ea319cf8d1e44c2a2ba6addc029134f8036cbfb2","observation_id":"c555f45a-4120-495c-94ac-79577b8dbd9c","resolution":{"observed_at":"2026-08-15T21:17:01.269975Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.252162Z","title":"von Horstig, D","venue":null,"work_id":"f6238f02-86ef-4750-a3b4-b0f5f5fa3d68","year":2024},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":41,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.594449Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:bd77e05bdba2f630f0b30a82e7c86b2965822d31cf1461c6c05022bdb4d443fb","observation_id":"ab439c2d-3b1d-4c77-80ca-50336648075e","resolution":{"observed_at":"2026-08-15T21:17:01.257160Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1038/s41467-018-06039-x","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:00.768659Z","title":null,"venue":null,"work_id":"048d38ef-6fc7-474b-8152-c4dc3a5f9978","year":2018},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":42,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.597764Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:c6f34cbbab145eb178983638191be652ab06a5ef3468a228052551c7a1758d04","observation_id":"940a96bb-4616-42c6-beea-d15ec1e2ed15","resolution":{"observed_at":"2026-08-15T21:17:00.772603Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.240044Z","title":"D’Anjou and W","venue":null,"work_id":"e3ac38dc-5cb8-48aa-b21c-9ef7c644e127","year":2014},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":43,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.601069Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:4462efae3c5d581bc330842387057558dd3b7c4fc16c2a391b16731d80dea570","observation_id":"71671657-d239-4aae-9729-64d44a1f3ee7","resolution":{"observed_at":"2026-08-15T21:17:01.243887Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.223031Z","title":"D’Anjou, L","venue":null,"work_id":"ef21aff4-3655-4d70-b499-48fa4d54ab5a","year":2016},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":44,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.604331Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:8ee091b9e68204a0e29f324b4946074afdb7703a1327b89cb508250ea405b0a1","observation_id":"51676e06-fdde-4a69-ab93-99883934e305","resolution":{"observed_at":"2026-08-15T21:17:01.229557Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.209925Z","title":"Lawrie, H","venue":null,"work_id":"a365c71c-fc3d-4ecc-977e-0e8eb6bd182c","year":2020},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":45,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.607844Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:cdae21e6c6947a3e359686e9ea9bb45600457bcc692cbe2df264a98ba0936813","observation_id":"b8d5d957-363b-40a0-bcbe-10737c4df5ab","resolution":{"observed_at":"2026-08-15T21:17:01.213747Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.197529Z","title":null,"venue":null,"work_id":"ebef23d0-05cc-49a5-8693-fdcd69c7e268","year":2021},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":46,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.611093Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:8b173a2ffb9e8c9f66fcfaa0013e16c54b75d6690d3c0c987823995bda5df8ef","observation_id":"fb10ad30-deca-44d0-9f23-692c91a25650","resolution":{"observed_at":"2026-08-15T21:17:01.201467Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.185731Z","title":"Patom¨ aki, J","venue":null,"work_id":"41b65bb0-f5e8-4734-b42b-9e2cd783a50a","year":2024},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":47,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.614223Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:77e5cf4637e24455debbeb7629e6dc71a29a22e910b88d8e1a4f6977f94b3f34","observation_id":"80524166-6acb-4b11-811c-08990e6e9f12","resolution":{"observed_at":"2026-08-15T21:17:01.189341Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.172974Z","title":"Nurizzo, B","venue":null,"work_id":"c69e5778-df9f-4707-95c4-d6396ccf477a","year":2023},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":48,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.617547Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:b5e00b8d0cc3cd61cd934e3e3726617fb99594aa59c3be433afb1a75e0953782","observation_id":"b3feeb1c-1c3e-4359-b1cb-4604257b2bf4","resolution":{"observed_at":"2026-08-15T21:17:01.176652Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.160117Z","title":null,"venue":null,"work_id":"e0fdaa8e-5920-4da0-befb-54c4c4400c45","year":2019},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":49,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.621019Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:b0b72760923b8311eaa6fa3612b9eb5d04d27f377a6b12c746ec3d6b5e54eac2","observation_id":"a6c689e0-7cc5-4f9c-92c8-1e15fa431260","resolution":{"observed_at":"2026-08-15T21:17:01.163934Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.147563Z","title":"Ghosh, A","venue":null,"work_id":"f8c7022a-d10f-40ef-ad6d-14655a996753","year":2013},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":50,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.624603Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:8f8aeae1db4f8bb5b861101ea06481b030d8cfce32b627429387bb95fe3871b9","observation_id":"de6d7bc5-ae4c-4bc0-a435-8253c5948b1a","resolution":{"observed_at":"2026-08-15T21:17:01.151128Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.134996Z","title":null,"venue":null,"work_id":"a3f5fa70-fd53-4b75-aba3-0d90776a7685","year":2018},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":51,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.627763Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:af910cc166b25ea89abe75be6fac2904b81b1fda2b60be8092bf43a6eb77beb8","observation_id":"5c6688ff-7998-4ef6-98ad-f3edd96e3f6d","resolution":{"observed_at":"2026-08-15T21:17:01.139043Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:00.631039Z","title":null,"venue":null,"work_id":null,"year":2018},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":52,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.631039Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:135c3899b92036e1a6ca81ffc23a333d3305d5e187d8de4f581e8dc2a59f92bd","observation_id":"12899b75-301f-4368-af8b-202d448d07f3","resolution":{"observed_at":"2026-08-15T21:17:00.631039Z","resolver_source":null,"status":"malformed_identifier"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:00.634717Z","title":null,"venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":53,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.634717Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:6d2bff390fd8f1e56763625a9d3fd6a1b861718929b1ee6226793c05e468eba3","observation_id":"574776a8-9532-4750-a87d-1ccdf35aba32","resolution":{"observed_at":"2026-08-15T21:17:00.634717Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.120556Z","title":"Meunier, I","venue":null,"work_id":"4760f6a4-153f-45f7-98ae-85d4294a3e26","year":2007},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":54,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.637957Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:983f5ef547db9b9ac9b42bc8b7ec594fef2ebeb80ae8ad76cfa090f4a5e29908","observation_id":"df2d705d-fd6f-4cca-ab7c-a54e0c3c43e7","resolution":{"observed_at":"2026-08-15T21:17:01.125158Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.107056Z","title":"Shen and M","venue":null,"work_id":"bb73cf01-d9bb-4062-ab45-1a5a6753e888","year":2007},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":55,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.641513Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:513768789c7d9ce0d7743acabcbd92de357decd9d57aef0f013e27304f0add64","observation_id":"9942c319-1e36-4d09-9ace-e87f126f91be","resolution":{"observed_at":"2026-08-15T21:17:01.110688Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.094696Z","title":"Derakhshan Maman, M","venue":null,"work_id":"7b738292-ebb2-44f2-96df-ca9a276db078","year":2020},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":56,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.644944Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:6bf4c5845cb07d14107f2c2470648ff29673b13d1fbd25d1549509c486859081","observation_id":"04164984-13b4-45d1-bfe0-2dc94b1794f2","resolution":{"observed_at":"2026-08-15T21:17:01.098625Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:00.648197Z","title":"D’Anjou and W","venue":null,"work_id":null,"year":2014},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":57,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.648197Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:8ff080425a9eec56b41655815df2654db7c128b9c91f3cb769d264d101aaecfe","observation_id":"ae44d83e-1ec1-494c-a92e-74efc0bd8cc0","resolution":{"observed_at":"2026-08-15T21:17:00.648197Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.081733Z","title":"Dynamax: A library for prob- abilistic modeling with neural networks,","venue":null,"work_id":"ddd891fd-d2e2-4381-ae9b-eae7e4403303","year":2024},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":58,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.652085Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:4dcd629ab1b121c9de5f60f5964c1836e7f634014d7e1cc29a261af1d735329c","observation_id":"a79ba7be-5d8f-4e97-9934-5c4471eef94e","resolution":{"observed_at":"2026-08-15T21:17:01.085883Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.068331Z","title":"Chen, H.-X","venue":null,"work_id":"c2c6ae74-1019-4ed0-b49c-fe630f17b583","year":2023},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":59,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.655548Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:07556ef27558b587255a06beee903e2e3b237ff69ec73a7b1edc4a522ff44753","observation_id":"30318fc7-6522-4e73-bba7-87e82cc8eea9","resolution":{"observed_at":"2026-08-15T21:17:01.072271Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":{"arxiv_id":"2407.17407","last_updated":"2024-07-24T16:42:58Z","snapshot_observed_at":"2026-08-16T13:31:21.745837Z","submitted_at":"2024-07-24T16:42:58Z","title":"Systematic study of High $E_J/E_C$ transmon qudits up to $d = 12$","version":1},"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":"2407.17407","snapshot_observed_at":"2026-08-15T21:17:00.659037Z","title":null,"venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":60,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.659037Z"},"links":{"cited_paper":"/paper/2407.17407","citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:fec658769e290d44a52bd6ba85948b8343f7a3af7fbe8b4b3299221db5825d9f","observation_id":"75302d57-8f05-494e-8e98-635bb2227dca","resolution":{"observed_at":"2026-08-15T21:17:00.659037Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.054965Z","title":null,"venue":null,"work_id":"b2aa18ed-3445-4f6d-9e33-f2e3fbd5bff3","year":2012},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":61,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.663059Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:3ae609364e71d7e28947dfcaf5153e8008b169ed626f385a72775d8bf023b9ce","observation_id":"94d1019a-66bb-42e0-9113-ce3ee9ea2a03","resolution":{"observed_at":"2026-08-15T21:17:01.058777Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":{"arxiv_id":"2410.15590","last_updated":"2024-10-25T12:11:14Z","snapshot_observed_at":"2026-08-16T13:07:35.195431Z","submitted_at":"2024-10-21T02:18:35Z","title":"A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations","version":2},"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":"2410.15590","snapshot_observed_at":"2026-08-15T21:17:00.666248Z","title":"Steinacker, N","venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":62,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.666248Z"},"links":{"cited_paper":"/paper/2410.15590","citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:8cdce49eba2b9cecb0f21a89587ac738db94327bac6c0c289082eaa455876281","observation_id":"ae0c266d-c54f-49e0-a3e8-3091c97c19b0","resolution":{"observed_at":"2026-08-15T21:17:00.666248Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:00.670032Z","title":"Takeda, A","venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":63,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.670032Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:11ab28b20534e5aed65d0b37e54279a61355564350d82d9e0c494e51163d6f1f","observation_id":"d6ff6225-81be-479e-b5d2-da597a079462","resolution":{"observed_at":"2026-08-15T21:17:00.670032Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1038/s42005-018-0066-8","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:00.738374Z","title":"Ahmed, A","venue":null,"work_id":"695597e7-70b7-4b9a-ae70-c41260f0169f","year":2018},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":64,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.673433Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:13444a165190941066a74fbdeefc19efc4fd3eac132fa21bee23c2cfda5a0e61","observation_id":"9dfeed9a-3d01-4d88-b1fb-4f111cc54bfa","resolution":{"observed_at":"2026-08-15T21:17:00.742821Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:00.676913Z","title":"Vigneau, F","venue":null,"work_id":null,"year":2023},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":65,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.676913Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:c6988bd84c7973940475628d9705dcef6aca92a1a8c5ef9170a36e421f2629dd","observation_id":"9e0d3c7a-7e92-4c23-8dbe-503af4a92e0d","resolution":{"observed_at":"2026-08-15T21:17:00.676913Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.033053Z","title":"Ciriano Tejel,High-fidelity, compact readout of spins in silicon quantum dots, Ph.D","venue":null,"work_id":"febd80d7-83f5-4236-9a64-f2b1c06cad7c","year":2022},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":66,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.680759Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:36d7a125af041032c6b0304de1af88c44689485cbac78d8697c0455cdceb4dbd","observation_id":"d1b52009-dfcc-471d-9f3a-ef707e27912d","resolution":{"observed_at":"2026-08-15T21:17:01.037387Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.019193Z","title":"Oakes,Novel radio frequency applications and auto- mated characterisation of silicon quantum dots, Ph.D","venue":null,"work_id":"41bd9b54-99c7-48d6-92f8-573ef4f65ca2","year":2024},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":67,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.684227Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:0111080a7c5040b3f7fc88656accdf7f41a260ea01426f81d7fff7554c95ccd9","observation_id":"8ebc1861-8197-44c6-a420-363c997fd523","resolution":{"observed_at":"2026-08-15T21:17:01.024116Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:00.688353Z","title":null,"venue":null,"work_id":null,"year":2004},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":68,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.688353Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:786af943a2adde95dd40f4a4b1f5bf3a230cef43d16c309c0f7b664f1ceb4c03","observation_id":"1e8fb005-753e-4020-a723-ff652276b588","resolution":{"observed_at":"2026-08-15T21:17:00.688353Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-15T21:17:01.006390Z","title":null,"venue":null,"work_id":"5f8bbe9f-2a8f-4c56-b2f8-1a48c09b099d","year":null},"citing_paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots","version":1},"reference_index":69,"source":"pdf_text","source_observed_at":"2026-08-15T21:17:00.692390Z"},"links":{"citing_paper":"/paper/2505.10435"},"observation_digest":"sha256:16aa79173ddd697c29a0a909b81afe27c3244945e1146fdc7608317b5322a1b0","observation_id":"5780ee4a-5b42-4010-aa36-46d7dd97b2e6","resolution":{"observed_at":"2026-08-15T21:17:01.010247Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"state":"measured"}}],"paper":{"arxiv_id":"2505.10435","last_updated":"2025-05-15T15:53:09Z","latest_version":1,"primary_category":"quant-ph","snapshot_observed_at":"2026-08-17T08:23:36.439871Z","submitted_at":"2025-05-15T15:53:09Z","title":"High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots"},"reference_resolution":{"displayed":69,"state_counts":{"malformed_identifier":5,"metadata_mismatch":0,"parse_uncertain":0,"unresolved":31,"verified_exact":4,"verified_fuzzy":29},"total_outbound_references":69},"refusal":"A citation records a reference. It does not transfer a finding from one paper to another.","schema":"pith.paper-citation-record.v1","standing_sources":[{"observed_at":"2026-08-20T06:33:59.587034+00:00","source":"crossref"},{"observed_at":"2026-08-20T06:33:54.927442+00:00","source":"retraction_watch"}],"thesis":"As of 20 August 2026, this Paper Citation Record lists 69 of 69 outbound references and 3 inbound Pith citation observations for arXiv:2505.10435."}