{"as_of":"2026-08-14T08:26:00Z","caps":{"database_statements":6,"inbound":100,"outbound":100},"context_digest":"sha256:ab85413c5cbecc032ed4d610b380466b3c1be8c8a9b3eaf7b818d1eb9425002c","coverage":[{"denominator":61,"lane":"reference_resolution","note":"Typed states for the displayed outbound observations.","records_observed":61,"source":"paper_references, paper_reference_links","source_observed_at":"2026-08-07T14:25:37.907885Z","state":"measured"},{"denominator":61,"lane":"standing_notices","note":"One-hop event checks from named stored sources.","records_observed":61,"source":"scholarly_work_events, retraction_status_cache","source_observed_at":"2026-08-14T06:32:32.682623+00:00","state":"measured"},{"denominator":0,"lane":"inbound_itemization","note":"Pith citing papers itemized under the disclosed page cap.","records_observed":0,"source":"paper_references, paper_reference_links","source_observed_at":null,"state":"measured"},{"denominator":1,"lane":"external_citation_measurements","note":"A source-named dated measurement, never combined with another source.","records_observed":0,"source":"cited_works","source_observed_at":null,"state":"measured"}],"external_citation_measurements":[],"inbound":[],"links":{"evidence":"/evidence","html":"/paper/2505.18940/citation-record","integrity":"/paper/2505.18940/integrity","json":"/paper/2505.18940/citation-record.json","paper":"/paper/2505.18940"},"outbound":[{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1021/acs.jpclett.5b01686","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T05:30:23.456663Z","title":"Castellanos-Gomez, Black phosphorus: narrow gap, wide applica- tions, The journal of physical chemistry letters 6 (21) (2015) 4280–4291","venue":"The Journal of Physical Chemistry Letters","work_id":"d60d6051-2ea3-46ec-bb9b-662ea034e7fd","year":2015},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":1,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:33.263334Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:2f3edffc34f7286354faf0b66d6429809715b0501281fb7c97c026f32ac83a6b","observation_id":"99ebf566-8da5-4dbe-befe-157bb4b97c2b","resolution":{"observed_at":"2026-08-07T14:25:43.966457Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:33.345943Z","title":null,"venue":null,"work_id":null,"year":2019},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":2,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:33.345943Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:3ad6ccf4328f160d97e819e64ad702af3869a1e394fefa3fd6fc7dbecf0b85c9","observation_id":"b63f330a-1254-4a39-9de7-8ef7a2370d5e","resolution":{"observed_at":"2026-08-07T14:25:33.345943Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1126/science.1159725","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T05:30:23.456663Z","title":null,"venue":"Science","work_id":"a99eeb8c-6c8a-4a06-a3e8-387d036b2554","year":2008},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":3,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:33.460762Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:3e8f1face7228afdfaf1911142a2a94ad31645c5113e1ad2b98751947377e61d","observation_id":"d933d129-bf8a-4922-8da9-6b1576141f1a","resolution":{"observed_at":"2026-08-07T14:25:43.934517Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/0924-","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:43.906874Z","title":"Boyer, E","venue":null,"work_id":"90754469-9acc-4237-afdf-35dc87480d99","year":1991},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":4,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:33.543220Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:d4c15064c9733c0927c5073c1bd2da269190a81ab0bee4c697b344943da518ec","observation_id":"9d2b2119-5fa0-4f61-8d89-bb7c5b7036c7","resolution":{"observed_at":"2026-08-07T14:25:43.913786Z","resolver_source":"doi_truncated","status":"malformed_identifier"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"2022.11163","doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:44.355679Z","title":null,"venue":null,"work_id":"8e6a2955-fb53-49f1-8d41-b796ca8f7144","year":2022},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":5,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:33.641494Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:5e47fd483b264e28a5c9032c2a41afb3d5dcee6b8e33ee6e4c59a878395556f9","observation_id":"4dbd0971-1403-4fb4-b087-5ba7901dc52d","resolution":{"observed_at":"2026-08-07T14:25:44.363506Z","resolver_source":"raw_fallback","status":"metadata_mismatch"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1515/9783110307023.1","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T05:30:23.456663Z","title":"Dai, Optoelectronic properties of narrow band gap semicon- ductors, De Gruyter, Berlin, M¨ unchen, Boston, 2015, pp","venue":null,"work_id":"580fc6e5-aa53-442b-8076-2edb4031eac0","year":2015},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":6,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:33.724273Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:4140daa48b880d69f65ee03b581fa862eb591b0c839b3f8690cacb71749bcca4","observation_id":"0b3a3bfc-b67a-40f8-8e11-2fd6ef56a48f","resolution":{"observed_at":"2026-08-07T14:25:43.890298Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1007/978-0-387-74801-6","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T05:30:23.456663Z","title":null,"venue":null,"work_id":"59ab522f-7bc9-4801-b487-fb803802fff9","year":2008},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":7,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:33.825814Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:bc8c4f531d6ecd34cab56af61d8afef09ec63ee47a5879cee59d600743e9fb75","observation_id":"4038a163-c728-436e-9cc6-d0666dd07494","resolution":{"observed_at":"2026-08-07T14:25:43.868579Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.3390/s20247047","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T05:30:23.456663Z","title":"Rogalski, P","venue":"Sensors","work_id":"1f75b487-1d34-4188-a31e-aef26423066d","year":2020},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":8,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:33.894902Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:dc89d737df7f22aa4f706fe8886ab42676884f776003455e5bb9f9257db907e8","observation_id":"7cca03b7-094f-4a8b-a9af-ca453078ea49","resolution":{"observed_at":"2026-08-07T14:25:43.847585Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1116/1.574249","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T05:30:23.456663Z","title":"Berding, S","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","work_id":"cc017c20-a594-4b47-905d-de8e70d1ac05","year":1987},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":9,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:33.962336Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:eac122fed676ab8332dd2de4874d8e2b13e24e0b47029ac92fa06953e849e584","observation_id":"7ad783a8-4a06-410c-b16c-3443f2bfbf6e","resolution":{"observed_at":"2026-08-07T14:25:43.613772Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:34.037713Z","title":"Rogalski, Hgcdte infrared detector material: history, status and outlook, Reports on Progress in Physics 68 (10) (2005) 2267","venue":null,"work_id":null,"year":2005},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":10,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:34.037713Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:cdc6ee820726e60b64cea4c421173b08be5821ab332466d0ec0d6011e00ecc9f","observation_id":"ece5e2d1-b3c5-4adc-ab84-d77bb26e7345","resolution":{"observed_at":"2026-08-07T14:25:34.037713Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1117/12.429413","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T05:30:23.456663Z","title":null,"venue":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","work_id":"bf1f72d3-05f3-4a49-b6d7-59249b877f2b","year":2001},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":11,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:34.112579Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:8c1c9ae783385388c828e5b32f35ece2b1e4be83a91a7d6a153b9a0440f7da57","observation_id":"e134b384-855e-43fb-b592-46364fddb721","resolution":{"observed_at":"2026-08-07T14:25:43.467075Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1007/s11467-021-1055-z","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T05:30:23.456663Z","title":"Li, Y.-X","venue":"Frontiers of Physics","work_id":"b3fc688f-76c0-420a-b935-cd5c57f384de","year":2022},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":12,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:34.190805Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:b5a3c7008fe216940061b97b39313f38d02568b8c9e58407732976163e850d75","observation_id":"07d16a3f-a446-48ed-9f2c-91f0a9cf1f98","resolution":{"observed_at":"2026-08-07T14:25:43.228476Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:44.448851Z","title":null,"venue":null,"work_id":"f5c55613-8d7a-4af1-a68e-9849daf5c37e","year":1990},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":13,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:34.289303Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:c6ffc5656d23fe2fc28a62115489b8f04520f8db6af47bc90f9a7d6f1a050cb3","observation_id":"8718accd-0107-483c-88c2-565ecba9adc0","resolution":{"observed_at":"2026-08-07T14:25:44.455292Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:34.362907Z","title":null,"venue":null,"work_id":null,"year":1987},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":14,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:34.362907Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:0b8df066f8112decd33e35b1aea153e38f4a222558646a62dde824ef30fcdb93","observation_id":"0cfb6aa5-ef93-405f-ada7-6d5c975b202b","resolution":{"observed_at":"2026-08-07T14:25:34.362907Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1007/b76778","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T00:03:45.533247Z","title":null,"venue":null,"work_id":"1da8628c-2f94-4e27-802c-d3b5d61bc16c","year":1998},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":15,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:34.444528Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:a61c85feff9af021029eb441cbb7339ec573cc855437feb059f0c97b87b1f634","observation_id":"c6878e1d-a0eb-467e-b189-a5a25bf2f766","resolution":{"observed_at":"2026-08-07T14:25:42.964382Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:44.430910Z","title":null,"venue":null,"work_id":"04e399b6-8540-4ef1-ae71-0e9daf89e780","year":2006},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":16,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:34.524499Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:24514898c234189efd61c564b13b58036ab596eb57e86ed3d750b288a9ad6e08","observation_id":"1a3abe85-23be-4691-86b6-ff353b6bd0a3","resolution":{"observed_at":"2026-08-07T14:25:44.436585Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.3139/ijmr-1998-0165","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:42.649221Z","title":"Kuper, W","venue":null,"work_id":"7e746464-5e6d-4d3f-9298-377c3b00e617","year":1998},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":17,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:34.598676Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:4f1cfbfd14b9fe8d939daa5b0c573f2c98524d8f204fd6d184542195f1ba5c55","observation_id":"f98ee840-acaa-46a4-9ad9-9401cdc78804","resolution":{"observed_at":"2026-08-07T14:25:42.748366Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:44.412980Z","title":null,"venue":null,"work_id":"ffb59ffe-d2fc-4994-bc96-a84ce4cc22c1","year":1964},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":18,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:34.672291Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:967b1618ba1f8bdb3d3889f2332a2704d7f2879af9786d129bee25ea29e416b1","observation_id":"153ba541-5416-46e7-9113-5bdf4197f7d0","resolution":{"observed_at":"2026-08-07T14:25:44.419048Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/j.calphad.2008.08.001","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T05:30:23.456663Z","title":"Colinet, J.-C","venue":"Calphad","work_id":"73fd82d9-4797-4567-922c-9f4f1238f179","year":2009},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":19,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:34.746555Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:19563c09fe17fa512643cede4c45e941359a02242c28c801422aa5b62e76a1d0","observation_id":"46e3c0ec-e97d-4a02-a77d-f9aabdc19850","resolution":{"observed_at":"2026-08-07T14:25:42.562791Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:34.822125Z","title":"Kirklin, J","venue":null,"work_id":null,"year":2015},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":20,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:34.822125Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:d86ddbb7b72cbffe0980202d07cbd2fc37bea3526642d30d859b52e547a9f486","observation_id":"d66c73b5-a6da-4e4c-91a5-63e41feecb02","resolution":{"observed_at":"2026-08-07T14:25:34.822125Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1063/1.1455612","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T05:30:23.456663Z","title":"Mizuguchi, H","venue":"Journal of Applied Physics","work_id":"2750254d-4d5c-48b2-8ddb-963f4e0648c0","year":2002},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":21,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:34.900633Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:c8078eca3c15c8ac8e15453d7e84aa6a4c5f0347888e94de55dfd4b94dc80601","observation_id":"38edc24a-0a88-4da7-aad0-60b001bf0832","resolution":{"observed_at":"2026-08-07T14:25:42.304301Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1007/s10853-014-8561-","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:41.997105Z","title":"Chichvarina, T","venue":null,"work_id":"a488fecd-4ea3-437b-a1bd-8e6db3d8fdc4","year":2015},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":22,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:34.948976Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:fa3036b72df1e82bdb6d2634bd031af4ed7ccde9db416e23aae6382ccd05ed04","observation_id":"4cd03990-ba03-42b3-8174-fe41b7b98f28","resolution":{"observed_at":"2026-08-07T14:25:42.105249Z","resolver_source":"doi_truncated","status":"malformed_identifier"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1038/srep18554","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T05:30:23.456663Z","title":"Li, et al., Growth and stress-induced transformation of zinc blende aln layers in al-aln-tin multilayers, Scientific Reports 5 (2015) 18554","venue":"Scientific Reports","work_id":"f3ca5d91-511c-4381-804b-b5bfadd458a9","year":2015},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":23,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:35.010941Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:da9dae654812c9a10f71e5a793a3d740e72b09194bed9aab9aba90a24aeaa884","observation_id":"7bf72bb7-7b29-4bdc-b6b8-1c3a177341db","resolution":{"observed_at":"2026-08-07T14:25:41.836497Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/j.cis.2017.07.033","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T05:30:23.456663Z","title":null,"venue":"Advances in Colloid and Interface Science","work_id":"78f7cf32-79c7-49d8-8b15-3785c8a00815","year":2017},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":24,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:35.130415Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:814b0527dc076af75126f9b7ee686db253b4bb3caed233046c885d5ba9b14f58","observation_id":"732b2a74-6d82-46b9-9af1-a70acfe2b938","resolution":{"observed_at":"2026-08-07T14:25:41.631000Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[{"edge_observation":{"observed_at":"2026-08-08T00:17:56.071387+00:00","source":"paper_reference_links","state":"open"},"event_date":"2018-04-25","event_type":"correction","notice_doi":"10.1016/j.cis.2018.04.006","provenance":{"observed_at":"2026-07-11T03:12:41.466844+00:00","source":"crossref","source_record_id":"10.1016/j.cis.2018.04.006->10.1016/j.cis.2017.07.033:correction"}}],"reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/j.cplett.2004.09.031","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T05:30:23.456663Z","title":null,"venue":"Chemical Physics Letters","work_id":"38b365b3-a88d-4f28-a809-eb6ca0246d2f","year":2004},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":25,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:35.229846Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:a84a9debe4d7defd26f156ccb36109fc743b2b76027780acc90affc46755cf19","observation_id":"340bc3f3-acd5-44a5-bc64-5a1b2b27fce0","resolution":{"observed_at":"2026-08-07T14:25:41.409620Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1002/masy.202100350","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T05:30:23.456663Z","title":"Alrefaee, U","venue":"Macromolecular Symposia","work_id":"4c8a4a42-8499-4660-8d45-037c5c87f4e5","year":2022},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":26,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:35.303748Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:bd71ab9eaa9df68d4860d3617293be7bb1779f1acfb8655649034a2daeacb1eb","observation_id":"637c0137-f8f3-43b6-acdb-4f52941c82dc","resolution":{"observed_at":"2026-08-07T14:25:41.142981Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1002/pssb.202400475","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T05:30:23.456663Z","title":"Manickavasagam, U","venue":"physica status solidi (b)","work_id":"c50a6746-d7bf-4de8-95be-436ed0f89b4b","year":2025},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":27,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:35.428733Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:9f6885601087bb991ee4fb08a0aa2f0055750ab4bfcfbfda2885b343f6791076","observation_id":"da5b4fb1-6a6c-48ef-a77f-de8e475c905f","resolution":{"observed_at":"2026-08-07T14:25:40.999404Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:35.524956Z","title":null,"venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":28,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:35.524956Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:09ca9696d7ee19efa217d545a3ef986fcbcfbaf8cbf8522b2110ff38fe9d2f0a","observation_id":"901cba55-ae3a-442e-93e9-d12bba1e7791","resolution":{"observed_at":"2026-08-07T14:25:35.524956Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:35.624491Z","title":null,"venue":null,"work_id":null,"year":1980},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":29,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:35.624491Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:ca51f46091d90874a1617d35883f523c7edae56a66afb04bf9c7b63061329e92","observation_id":"24747e29-e470-4d49-8bf7-29c43a6563f5","resolution":{"observed_at":"2026-08-07T14:25:35.624491Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:35.716139Z","title":null,"venue":null,"work_id":null,"year":1996},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":30,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:35.716139Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:ef8317832f7aad4d1b83857ad5bacbfece3f849df0a7063880f5f045bc5754e2","observation_id":"f347df80-e254-4933-a245-a4663f2d464e","resolution":{"observed_at":"2026-08-07T14:25:35.716139Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:35.786144Z","title":"Hammer, L","venue":null,"work_id":null,"year":1999},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":31,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:35.786144Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:b599e45859bdb060ff04fefa9e4050d19a8a8e9d4c7d8c1b5208db5201aa7018","observation_id":"f80a3b31-a933-4b61-a9bc-8e5f89df48d3","resolution":{"observed_at":"2026-08-07T14:25:35.786144Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:35.878088Z","title":null,"venue":null,"work_id":null,"year":2017},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":32,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:35.878088Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:30fdb28650bc6cb8ceb602a1c316c7c2847c561293c3d9e312a27cd058b766b7","observation_id":"3cbd052c-a254-4b7b-aff8-084e35564049","resolution":{"observed_at":"2026-08-07T14:25:35.878088Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:35.986412Z","title":"Graˇ zulis, D","venue":null,"work_id":null,"year":2009},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":33,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:35.986412Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:5b83c0a4195e1c1c5661822ebe3f3a1c03bac6246e6f18160a79149850168b87","observation_id":"bd34dd12-1ab4-44df-bc79-b5e38729b71f","resolution":{"observed_at":"2026-08-07T14:25:35.986412Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:36.060103Z","title":null,"venue":null,"work_id":null,"year":1944},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":34,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:36.060103Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:363e3bfd6add649d61b5822fdb449049c78286c099c229539cced8cd7033cd16","observation_id":"1fa8498a-66ba-4ced-904f-729e2ef4773f","resolution":{"observed_at":"2026-08-07T14:25:36.060103Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/j.ijhydene.2024.05.442","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T05:30:23.456663Z","title":null,"venue":"International Journal of Hydrogen Energy","work_id":"0693391a-ceb3-473f-a748-e50a1e0513bc","year":2025},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":35,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:36.132616Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:e04b0231963af308c43f71de70f72e5090ce62f7ec1d540c6cb9e88478339818","observation_id":"2243a958-1523-43df-b0f6-43128dccae79","resolution":{"observed_at":"2026-08-07T14:25:40.605551Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"2023.41515","doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:44.174207Z","title":null,"venue":null,"work_id":"6c554c87-890e-4f40-967c-64d6722453cc","year":2023},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":36,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:36.215989Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:2eaf727b317af6173c9c6ceea9125df3121c866cf7cfe9a418a94b134b5fe8b7","observation_id":"aa360ffd-39b8-450b-a6b8-c8e44e450de4","resolution":{"observed_at":"2026-08-07T14:25:44.182365Z","resolver_source":"raw_fallback","status":"metadata_mismatch"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1021/acsenergylett.0c01758","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T05:30:23.456663Z","title":"Dyksik, H","venue":"ACS Energy Letters","work_id":"7b751295-6329-4f36-ac32-3b62831c66d1","year":2020},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":37,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:36.285073Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:e86e66cba56869c0b187f04a604e29db88f16a2eaf8c18f9a5c0e04119098820","observation_id":"966aabf2-fead-48c0-b662-2acdcab412e4","resolution":{"observed_at":"2026-08-07T14:25:40.393606Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:44.396012Z","title":"Kittel, P","venue":null,"work_id":"d1f9dc67-40f1-4249-9711-e42dc2db583b","year":2018},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":38,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:36.382475Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:867667d53a808fd80ffee7755114bf2da692393bb6a979c1bbbe8e03edc371af","observation_id":"891eb67f-bbea-4452-a545-a76cd9308009","resolution":{"observed_at":"2026-08-07T14:25:44.401127Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:36.433300Z","title":"Tang, J.-W","venue":null,"work_id":null,"year":2011},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":39,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:36.433300Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:73ea9236b5dbc05d7a2b03942ca26e43912063d6348335beab0f89f5fbeec5ac","observation_id":"e52ba2a6-43ab-4ff4-a81d-c65c5697c467","resolution":{"observed_at":"2026-08-07T14:25:36.433300Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:36.478322Z","title":null,"venue":null,"work_id":null,"year":2011},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":40,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:36.478322Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:30669861345d7f0cc7f2bbe88ddb5d721bd4f9d025dc6b780458dc36faed8418","observation_id":"89555421-a704-4b7a-a3d0-db48cc25755c","resolution":{"observed_at":"2026-08-07T14:25:36.478322Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:36.572635Z","title":null,"venue":null,"work_id":null,"year":2007},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":41,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:36.572635Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:b66c0e9e9fec1c12fd243d7dafd710bd91eddfec20509580f934bf9e17df81e7","observation_id":"17352db6-642a-48e1-abdb-711e48425bf2","resolution":{"observed_at":"2026-08-07T14:25:36.572635Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1103/physrevb.82.184502","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T05:30:23.456663Z","title":null,"venue":"Physical Review B","work_id":"1dde3491-36f0-4431-b585-d39e2ac0f3d7","year":2010},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":42,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:36.628912Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:2215a14e46765ce08ffb1d75f098cf48cc9d89202980ba129021ed910f6477be","observation_id":"626e872d-7652-43e6-8dd1-d1d7868743a8","resolution":{"observed_at":"2026-08-07T14:25:40.142032Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1103/physrevlett.84.143","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T05:30:23.456663Z","title":"Imada, M","venue":"Physical Review Letters","work_id":"f54a377f-14bf-4fb2-bcff-eb81258e23cf","year":2000},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":43,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:36.679379Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:14ba856db516b3e905b08427180cb26b89e2ec0d47f91c3e9243dda44ac292b5","observation_id":"7bce485d-d50c-4867-8333-06a1376fd794","resolution":{"observed_at":"2026-08-07T14:25:39.955310Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:36.729129Z","title":"Peotta, P","venue":null,"work_id":null,"year":2015},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":44,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:36.729129Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:e38fd8586a6119535f2d4cfb25a2f3c7870a4e11cf939d8a4b06631593c4eaa2","observation_id":"0c670977-20a0-40bd-9c3a-6e22f1a2c6d0","resolution":{"observed_at":"2026-08-07T14:25:36.729129Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:36.824734Z","title":null,"venue":null,"work_id":null,"year":1965},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":45,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:36.824734Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:d25a0bfeabf706a203222f9703a8d88a28b769bad844323346ac39a06f9b1af8","observation_id":"12fbd812-9f6f-4d55-a511-1186716d4f37","resolution":{"observed_at":"2026-08-07T14:25:36.824734Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/j.jallcom.2006.02.036","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T05:30:23.456663Z","title":null,"venue":"Journal of Alloys and Compounds","work_id":"5bf453a5-249b-4e71-b227-d6a6310dbd09","year":2006},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":46,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:36.901064Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:562bb5fdf269d7138fb4d0e50eafac55747bbab3cdf31d51cf5d943c8fb00ea9","observation_id":"a8360282-08fd-4892-950f-0ca001996296","resolution":{"observed_at":"2026-08-07T14:25:39.721668Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:36.947420Z","title":null,"venue":null,"work_id":null,"year":2005},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":47,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:36.947420Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:eb144c6cf92e58f1c5484bd15313634858896b68e466b8e1322ed8ce52340865","observation_id":"958d4354-f243-4b33-adaa-70020ddb3195","resolution":{"observed_at":"2026-08-07T14:25:36.947420Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1021/ed078p387","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T05:30:23.456663Z","title":"Sproul, Electronegativity and bond type: Predicting bond type, Journal of Chemical Education 78 (3) (2001) 387","venue":"Journal of Chemical Education","work_id":"473199cc-6e7c-4407-ba23-607679b57353","year":2001},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":48,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:37.004109Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:9923657747b5540d2ece0fa9c67b11a947abe6b1ca81b6c3a1109e28f9c57ced","observation_id":"ea856128-375d-4b93-85d7-b704d52b753c","resolution":{"observed_at":"2026-08-07T14:25:39.527469Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:37.087683Z","title":"Henkelman, A","venue":null,"work_id":null,"year":2006},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":49,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:37.087683Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:afc40889ba34c36ea510955886894e8df7bd26cadb617c663cffb8395781753c","observation_id":"1095a744-6b3d-4ecf-a527-c2599db5fda3","resolution":{"observed_at":"2026-08-07T14:25:37.087683Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1002/jcc.20575","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T05:30:23.456663Z","title":"Sanville, S","venue":"Journal of Computational Chemistry","work_id":"13060d01-566f-48f1-9d75-808a23480057","year":2007},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":50,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:37.161493Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:8aabc1844d370b5b5eabe7921c823dabd6c7dd2c72baad2ac397af9cca6d7edc","observation_id":"75e12960-aa3a-40dc-a414-ea145f98217d","resolution":{"observed_at":"2026-08-07T14:25:39.219938Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:37.218972Z","title":null,"venue":null,"work_id":null,"year":2009},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":51,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:37.218972Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:281cece23a6cf5dd503e0aefaedea854e3fd63014e9222a64c6b29521cc05c6e","observation_id":"7b7a01a3-926a-488a-a07b-e3ec18892544","resolution":{"observed_at":"2026-08-07T14:25:37.218972Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:44.374378Z","title":null,"venue":null,"work_id":"5b8fefc9-f2d8-4cac-89d3-a0e5d3718098","year":1976},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":52,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:37.293257Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:92f41c99ac5ccc09e677a23dd6f5c513aac85ecd880b05e9304be9b0a830883e","observation_id":"68056c1f-e440-46e7-9540-231c201021ec","resolution":{"observed_at":"2026-08-07T14:25:44.380514Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:37.358577Z","title":null,"venue":null,"work_id":null,"year":1941},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":53,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:37.358577Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:c61e24a77d771de12afe9d08fe71d93391bd1ad1ee1745e31d4b84f5eaedee02","observation_id":"a158c337-f1e9-4536-8818-5e2230112bd5","resolution":{"observed_at":"2026-08-07T14:25:37.358577Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:37.442868Z","title":"Gonze, C","venue":null,"work_id":null,"year":1997},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":54,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:37.442868Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:7ce6cdec384607540b3efa0d4621ec524a2f3b42c3718982381c9a0cb0b3acec","observation_id":"348bd478-734d-4283-88d3-4476f7961fe9","resolution":{"observed_at":"2026-08-07T14:25:37.442868Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/j.jallcom.2008.04.039","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T05:30:23.456663Z","title":null,"venue":"Journal of Alloys and Compounds","work_id":"6c42a844-4051-4fd5-919e-6000b318db1a","year":2009},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":55,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:37.508886Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:be729c44f0bafa8e68565d6136fa623bd4b44381263956b00b02475e23d415ce","observation_id":"04976fa4-fa0a-405b-ac27-396b7fb59967","resolution":{"observed_at":"2026-08-07T14:25:38.943319Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1103/physrevb.70.085206","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T05:30:23.456663Z","title":"Srivastava, H","venue":"Physical Review B","work_id":"9b24d9a9-655a-439a-ae7a-b46707039fec","year":2004},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":56,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:37.579846Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:46a5073eb8831d7fea29e0d42eadf1b8c3b5b1101940b0727789fc983099811b","observation_id":"60dabb4d-c826-4353-a3a3-c8c38beddb4d","resolution":{"observed_at":"2026-08-07T14:25:38.751526Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1103/physrevb.3.1862","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T05:30:23.456663Z","title":null,"venue":"Physical review. B, Solid state","work_id":"6e548614-91c8-4b9b-8357-8bfac65e741d","year":1971},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":57,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:37.625286Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:2ae7d12c3c2ec68f5f37ac344e07c4454140b5e939c21bebdaf32349389ce34b","observation_id":"e6667f8e-2502-445c-8f6d-e2b58526c3f9","resolution":{"observed_at":"2026-08-07T14:25:38.627744Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/c2013-0-07656-6","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T05:30:23.456663Z","title":"Wooten, Optical properties of solids, Academic Press: New York, NY, USA; London, UK, 1972","venue":"Elsevier eBooks","work_id":"2cc53cd3-5698-4c8b-8ccb-923449fda46d","year":1972},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":58,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:37.678203Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:cab2111a6563355ebada33b5d8f8a9be97c8c1eb71156d3c9f34e7ea0755752c","observation_id":"fdeda124-3cc0-4bfa-9126-f7de306ad462","resolution":{"observed_at":"2026-08-07T14:25:38.475741Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.12693/aphyspola.136.486","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T05:30:23.456663Z","title":null,"venue":"Acta Physica Polonica A","work_id":"12ca697c-1281-4c1b-821e-dcc7bcb0346a","year":2019},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":59,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:37.777660Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:245b667cc6da320f125c064daa486a899eac3dc187c5ce57064475164a444cdf","observation_id":"45279dd6-c8d3-4233-984b-950bd2d02d87","resolution":{"observed_at":"2026-08-07T14:25:38.279912Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"2021.41334","doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:44.078636Z","title":null,"venue":null,"work_id":"fa7ca4ef-9c51-479e-b12f-5dabb2f7c5c4","year":2021},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":60,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:37.841887Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:868b47ac86b60c378112145bcbddb5382cf2d39ffe71492659aa156ab0e65c23","observation_id":"335f3446-97bd-4c10-8ff2-9e670e82c218","resolution":{"observed_at":"2026-08-07T14:25:44.095904Z","resolver_source":"raw_fallback","status":"metadata_mismatch"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1063/1.4937269","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T05:30:23.456663Z","title":null,"venue":"Applied Physics Letters","work_id":"1430364e-242f-46d0-a58f-be221816f6dd","year":2015},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":61,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:37.907885Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:a37de8baceca98b2b0307119fd05a198f44eb2e3eecbbf837624115f3705fed3","observation_id":"f7b6171a-9089-40da-9960-32053f0fbab2","resolution":{"observed_at":"2026-08-07T14:25:38.113138Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}}],"paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","latest_version":1,"primary_category":"cond-mat.mtrl-sci","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor"},"reference_resolution":{"displayed":61,"state_counts":{"malformed_identifier":2,"metadata_mismatch":3,"parse_uncertain":0,"unresolved":25,"verified_exact":30,"verified_fuzzy":1},"total_outbound_references":61},"refusal":"A citation records a reference. It does not transfer a finding from one paper to another.","schema":"pith.paper-citation-record.v1","standing_sources":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"thesis":"As of 14 August 2026, this Paper Citation Record lists 61 of 61 outbound references and 0 inbound Pith citation observations for arXiv:2505.18940."}