{"as_of":"2026-08-23T17:12:00Z","caps":{"database_statements":6,"inbound":100,"outbound":100},"context_digest":"sha256:f196563b5a419a27a0e6c956e8ab08d89b7115f973f44eac32c66d044d3e3720","coverage":[{"denominator":39,"lane":"reference_resolution","note":"Typed states for the displayed outbound observations.","records_observed":39,"source":"paper_references, paper_reference_links","source_observed_at":"2026-05-19T15:21:06.137779Z","state":"measured"},{"denominator":39,"lane":"standing_notices","note":"One-hop event checks from named stored sources.","records_observed":39,"source":"scholarly_work_events, retraction_status_cache","source_observed_at":"2026-08-23T06:30:58.430688+00:00","state":"measured"},{"denominator":0,"lane":"inbound_itemization","note":"Pith citing papers itemized under the disclosed page cap.","records_observed":0,"source":"paper_references, paper_reference_links","source_observed_at":null,"state":"measured"},{"denominator":1,"lane":"external_citation_measurements","note":"A source-named dated measurement, never combined with another source.","records_observed":0,"source":"cited_works","source_observed_at":null,"state":"measured"}],"external_citation_measurements":[],"inbound":[],"links":{"evidence":"/evidence","html":"/paper/2605.15389/citation-record","integrity":"/paper/2605.15389/integrity","json":"/paper/2605.15389/citation-record.json","paper":"/paper/2605.15389"},"outbound":[{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"Our aluminium bond wires have a length ofl≈5 mm and diameter 50µm (r= 25µm), henceL bw ≈5 nH","venue":null,"work_id":"780ea282-b8eb-4ea8-900a-325fd54a3980","year":null},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":1,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:dedf71b87a4bece696d50a0aa328b1cef4b7caa93f5bb94457e8e4a03903f7cf","observation_id":"e17f2efa-a7e0-46d3-a1e8-0c5a57d7a611","resolution":{"observed_at":"2026-05-19T15:22:37.675564Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"Substitutingl= 5 mm andr= 25µm givesR bw,dc ≈0.07 Ω","venue":null,"work_id":"c88ccd70-39ab-4258-982c-44af79cc9637","year":null},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":2,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:8f40f119763c196763f8598c66dd3707aedb66aa38a53d337c3835be2adc1e3d","observation_id":"79f20fce-eb58-4ba3-9273-6a36457d1b01","resolution":{"observed_at":"2026-05-19T15:22:37.670289Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"Using a typical PCB trace in- ductance of order 1 nH/mm and measured trace lengths of approximately 10–15 mm yields inductance values re- ported in Table I","venue":null,"work_id":"3f657efe-89fe-4063-b5a0-1f7afc4857e0","year":null},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":3,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:97decd86a5b6d3fb14365ad1b2af438362a5033cbdf6a56e12715c954e32dbab","observation_id":"5ae90a80-c8ce-4d5e-a33f-0f94ed118cdb","resolution":{"observed_at":"2026-05-19T15:22:37.728245Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"Substitution givesC p ≈4 pF","venue":null,"work_id":"62149f8d-c873-4586-b077-4380cf758aaa","year":null},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":4,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:7f305d2cd63d1dc5387703bd5795f62c8b67cb81d6b58dcc0b0bae1c5d97d378","observation_id":"5c8c4624-6629-42e1-a692-6555354b9963","resolution":{"observed_at":"2026-05-19T15:22:37.734619Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"The values are taken atV DS = 0","venue":null,"work_id":"131b9a3c-1c2a-4e70-84cb-b0f959f5bd04","year":null},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":5,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:ed8c54b981492d4bcefbbce640eeb062dc112d848a29533c3109bcc28a4156e2","observation_id":"0591bc35-2e80-4214-9606-730671bb1131","resolution":{"observed_at":"2026-05-19T15:22:37.701609Z","resolver_source":"raw_fallback","status":"malformed_identifier"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":null,"venue":null,"work_id":"9fceb2e0-3914-420b-b8c7-dece16af27d4","year":null},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":6,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:5d02798651721abc785d550d5961639fb171e3eaa2cd680d0f9e7cf748956532","observation_id":"89298466-f101-481c-910c-f029da4a1f89","resolution":{"observed_at":"2026-05-19T15:22:37.694543Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"Hence, we argue that also contact resistances must increase dramatically","venue":null,"work_id":"40f40fd1-5c39-4e62-a842-4f31a78a7e21","year":null},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":7,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:5b5149c36e61a21a98dca8d88d8a7f46ba2211c9349cac869973ea538f562766","observation_id":"65636aa2-b0ca-44aa-af94-3d35467c26ff","resolution":{"observed_at":"2026-05-19T15:22:37.697425Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":null,"venue":null,"work_id":"e1122c65-6102-435f-8a86-63d28971bea5","year":2021},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":8,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:c8c57d0b619982f803ce4e02108e2d14301976acff0b54dd2da5ac104625aeea","observation_id":"b421bd2f-9030-4062-b342-fc8a845b62c0","resolution":{"observed_at":"2026-05-19T15:22:37.714221Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"Vigneau, F","venue":null,"work_id":"b4481088-9e80-4eaa-a484-af3f32813330","year":2023},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":9,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:514a88149576977569ed1a23b21db468cbb17b973c9b21fda2359ef13bade2f5","observation_id":"503d4fb6-437b-4a3d-8890-ae874fc39607","resolution":{"observed_at":"2026-05-19T15:22:37.730346Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":null,"venue":null,"work_id":"7a9b5d09-4f7d-45d8-b466-7e54e7a0573e","year":2013},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":10,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:92defbe949d73f91908d4bb26a8015f9ac23b31bfde41a5a186d74c25acededb","observation_id":"0f278484-4876-4823-9976-aabb0037ee8d","resolution":{"observed_at":"2026-05-19T15:22:37.679638Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":null,"venue":null,"work_id":"8842d5d0-f0ae-465f-b847-e7d2791dc853","year":2019},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":11,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:af5ec32bbf38dae8a6b2920ab460a210dead7d1dce1221965c2fee19c9c111fe","observation_id":"6e960697-07e6-4307-bdae-c4e0b26f4ba0","resolution":{"observed_at":"2026-05-19T15:22:37.683923Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"Schaal, A","venue":null,"work_id":"7a48ab0f-2284-4f4f-bf23-5de35386661a","year":2019},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":12,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:a892fa4af71520d8288a43a985b16013536942b870f5a84105cd801a946d828e","observation_id":"bbcca452-5b3f-4127-b2f4-aa671db758e2","resolution":{"observed_at":"2026-05-19T15:22:37.732488Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"Ruffino, T.-Y","venue":null,"work_id":"965a7d4e-bf35-4b75-95a3-de58bec55aaf","year":2022},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":13,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:14dea962ace15685f15fdcdbb187e67933d3f469e30bbd642ed884a065dfef1d","observation_id":"aab2dc11-d546-478e-9acd-2513b3c082e8","resolution":{"observed_at":"2026-05-19T15:22:37.648821Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":null,"venue":null,"work_id":"6775e5de-8fc8-4323-bcf0-74266af14529","year":2025},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":14,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:e46c9eb46832fca89aa4c09182042faed7091708e39f83ff5ac73dcfbf250c05","observation_id":"9a03ba89-af94-4214-afaa-a737b6437cd2","resolution":{"observed_at":"2026-05-19T15:22:37.672829Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-07-05T21:41:30.483052Z","title":null,"venue":null,"work_id":"248a5065-513d-49af-839d-8ad548cb6d3a","year":2021},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":15,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:c93099abe00ff53f067319b362a5372c398b21bbfdfd3d14dd9bfddb72703acf","observation_id":"926c9acb-ade5-45b4-8ac9-3db4bf3cc3d4","resolution":{"observed_at":"2026-05-19T15:22:37.718749Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"Scappucci, C","venue":null,"work_id":"1693aba7-e4d3-4874-89e9-24506c086397","year":2021},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":16,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:ac37da8cfef1669fd5b5f98dfd7c45a778a1f5978d4b0e8f8c0e0b79b3e2afb5","observation_id":"db9d4670-10b5-4d72-87e2-40b45ad873eb","resolution":{"observed_at":"2026-05-19T15:22:37.651729Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"Banerjee, C","venue":null,"work_id":"3e32b974-cac2-4bd0-a4e7-48557ad54f16","year":2025},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":17,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:4c0f9530a9dfc1cf7e68ea15099c6e9000f9b9669a3109befcb6575d2c381e13","observation_id":"c69e7421-2a7b-4910-95ac-dd6a4ec06dcc","resolution":{"observed_at":"2026-05-19T15:22:37.736629Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"Kimoto, Material science and device physics in SiC technology for high-voltage power devices, Japanese Journal of Applied Physics54, 040103 (2015)","venue":null,"work_id":"eb864fed-2270-43a9-ac41-4a14f3934f4f","year":2015},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":18,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:06393bf789cd015a4c359b7dcb72a8e8048a83e4a0aeb6e5bea39c8e3a1d1588","observation_id":"4929b2f5-8568-435b-a0d2-bfe6926d49f9","resolution":{"observed_at":"2026-05-19T15:22:37.721192Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":null,"venue":null,"work_id":"6d945d47-4ec6-45ad-9f3f-8064aee7bfcc","year":2018},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":19,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:223b3563c201b5a7ef23d17c153b0d658004e26c02d5d4d4c87878c319bf4e3c","observation_id":"b7191aaf-5374-43e1-9e18-4d712ed14f97","resolution":{"observed_at":"2026-05-19T15:22:37.707960Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":null,"venue":null,"work_id":"99de83be-8205-482f-a54b-dbc496f4f3bd","year":2020},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":20,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:1ae0995b95f6204c2a92b843f60cec5c8ff58e7406b81e848a6dbbe6ce417d15","observation_id":"9f70d560-0a40-44fe-a144-2ad98f286af6","resolution":{"observed_at":"2026-05-19T15:22:37.710069Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":null,"venue":null,"work_id":"d7153691-9c2d-417a-b396-7e201bbed97e","year":2008},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":21,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:7e16aa663ef1bf746efba45556d35fbf6d614b2f0699a3dc04f63a64d2aaae6b","observation_id":"f1f2327b-7bd7-4ac2-809c-91179513b1b0","resolution":{"observed_at":"2026-05-19T15:22:37.705729Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":null,"venue":null,"work_id":"027c62be-413f-40f8-943a-5f170373d6a4","year":2021},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":22,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:4ad0c00c8f53238a5c709ae774166fc27512df4e12c3b4942f646aee9cc94e69","observation_id":"8e403afb-3119-4924-a851-436ac67dddfa","resolution":{"observed_at":"2026-05-19T15:22:37.712074Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":null,"venue":null,"work_id":"7d69c921-f7d0-44c8-9851-bf5ec95bc1f9","year":2021},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":23,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:a2cdf9d91b57c1eb8bc2298bd3702243499e844313512556d879afa9ae090dda","observation_id":"fbde705f-83e0-480b-97be-43a9914b84d1","resolution":{"observed_at":"2026-05-19T15:22:37.716529Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"Baliga,Fundamentals of Power Semiconductor De- vices(Springer New York, NY, 2008)","venue":null,"work_id":"c61216c2-c15c-4f95-b591-299891396b06","year":2008},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":24,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:01fd3c4c4dcdda8972379013f3cc998d4992a4d5707b9f870b71ae8d93710929","observation_id":"b154c625-ad49-4f7f-98d4-0147eaf6c8ae","resolution":{"observed_at":"2026-05-19T15:22:37.654842Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":null,"venue":null,"work_id":"49c470db-ed94-483f-9d9e-5436ce20c726","year":2019},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":25,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:2240c414d94fb101fffebf6e2b021f5c00d4e3cafdecb6e4298901b974fca454","observation_id":"0a87b1a7-634b-407a-8569-065aa128cf67","resolution":{"observed_at":"2026-05-19T15:22:37.699505Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":null,"venue":null,"work_id":"8e071b5d-61ff-423e-8828-6b0c85c58de6","year":2019},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":26,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:eadffebf46ed32ccbc39b271460c2e3f7ba4a993979e4c84cb9fbb3525b984ae","observation_id":"387bbcb7-78db-419a-be4e-c49361119ca4","resolution":{"observed_at":"2026-05-19T15:22:37.692376Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"Powell, E","venue":null,"work_id":"08e46e6a-e0f0-42d6-802d-741c1b1415e3","year":2026},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":27,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:2f970974878494e48c3bfb5c4275652cbfd8137a7e53a38eb574df2a4ad3f2ab","observation_id":"cb3d4401-9e2b-418c-97b0-ee82b96a04f0","resolution":{"observed_at":"2026-05-19T15:22:37.688295Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":null,"venue":null,"work_id":"61c12bed-8d1c-40b5-8a3d-7640e15726b6","year":2020},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":28,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:eb0616904bb0b9af98e352c58f0702c7069dda5f9ff8e28f5ef0c980022a9697","observation_id":"74d54c57-7f99-49a6-8443-9666b65ff8f8","resolution":{"observed_at":"2026-05-19T15:22:37.690384Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"Nikolova, J","venue":null,"work_id":"4d7cfafe-3a30-4b7f-9851-4fc5e636212d","year":2004},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":29,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:6795251d5fa4928a9f8089adac98c32d8ff47af2e929d1969aa9e5181dba8da0","observation_id":"615d2714-ec9b-4f59-8ec3-a87f777ed9cb","resolution":{"observed_at":"2026-05-19T15:22:37.723411Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":null,"venue":null,"work_id":"985837b4-ad04-4ddf-b253-6af0af3dbc29","year":1998},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":30,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:82dbce9c7e687d4d890a689d57ffb9a3e95bc633e6b0c6c0a170d1aad6cd6445","observation_id":"c569a069-76ca-4038-9475-235b8a69fa8a","resolution":{"observed_at":"2026-05-19T15:22:37.681763Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":null,"venue":null,"work_id":"f90fe460-7a96-4480-b545-2e1631645738","year":2007},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":31,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:9dfe0caefecc5a25930e9d17a39d83d611ee30be00c1142f2fa510dcdb34ca4c","observation_id":"14429552-4808-495e-aa48-a06ee0527362","resolution":{"observed_at":"2026-05-19T15:22:37.686186Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":null,"venue":null,"work_id":"b329ea70-9251-4b1e-aa81-abd897308fe6","year":1943},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":32,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:1c7d5fe816aa36a94aacf5b7296abfe8dd830dab8123409464378506e9ee3f61","observation_id":"4e9d90bd-c503-4937-80bc-65cdb905721c","resolution":{"observed_at":"2026-05-19T15:22:37.677713Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.3390/ma15196736","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":null,"venue":"Materials","work_id":"3ad8548a-1365-42d6-9c73-90e30feda4e6","year":2022},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":33,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:fdfc6650db7be18449247f879633899f8d7c0d47660a8c333a300e5703e773bf","observation_id":"8992ce0b-416a-440f-8df4-db90f64400ce","resolution":{"observed_at":"2026-05-19T15:22:37.202569Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-05-24T12:53:50.115925+00:00","source":"crossref_status_cache"},{"observed_at":"2026-05-24T12:53:50.115925+00:00","source":"openalex_status_cache"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"Kimoto and J","venue":null,"work_id":"03d5bbae-b490-4bbc-ae8f-b4ff21cd0a75","year":2014},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":34,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:8b78a3f114ac2f82966629f7b4e4eba57f042033de9c330f3193c75d59332a8f","observation_id":"bbf26d7c-5eee-4f19-a3aa-178a0ebd799d","resolution":{"observed_at":"2026-05-19T15:22:37.725691Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"Robert, S","venue":null,"work_id":"5d93c004-c2fb-435d-a443-33618422e8d8","year":2001},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":35,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:c2d69719efd8788a5b8510f703c29f21c99f980eb9f32f34fc8d3e976ed46727","observation_id":"278e26b1-5697-4587-ace4-b240e62460a5","resolution":{"observed_at":"2026-05-19T15:22:37.664230Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"Pernot, S","venue":null,"work_id":"04c58a94-ba9e-454f-a386-4bef79c8e521","year":2000},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":36,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:de39b0a7a206bd996550a1acc8fd10a0e363fe319db87e76c61a648f41baf54d","observation_id":"63c2df1b-2c42-40e2-85a0-43d8e36fbbf2","resolution":{"observed_at":"2026-05-19T15:22:37.703693Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":null,"venue":null,"work_id":"72c7343b-41a0-46bc-af1e-88d6fa1b6203","year":2007},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":37,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:9d26bfa65a63d2682dd68f746812e91d432fa9022767a90b9c807099c981809c","observation_id":"77a2aee8-84a4-4368-91ba-5b5cb8a18f13","resolution":{"observed_at":"2026-05-19T15:22:37.661648Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":null,"venue":null,"work_id":"216caf18-af84-4e32-98cb-1764e0449f4e","year":1998},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":38,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:53a05766678a33ba80990fdb81e60eccd61813c36f95ae939a51b427adf1041a","observation_id":"884629b8-1abf-4065-bfb9-43d477d7d671","resolution":{"observed_at":"2026-05-19T15:22:37.667070Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":null,"venue":null,"work_id":"b941e7a7-0b88-4a5b-b947-3f72570c6ec3","year":2003},"citing_paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors","version":1},"reference_index":39,"source":"pdf_text","source_observed_at":"2026-05-19T15:21:06.137779Z"},"links":{"citing_paper":"/paper/2605.15389"},"observation_digest":"sha256:bb2a7d0ce47684b19eac8998aeb4460cb7973b1108b8f8688985a21b629ae4b4","observation_id":"61abeff1-dbd2-4597-8ad5-57f7e8be80b9","resolution":{"observed_at":"2026-05-19T15:22:37.658447Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"state":"measured"}}],"paper":{"arxiv_id":"2605.15389","last_updated":"2026-05-14T20:18:31Z","latest_version":1,"primary_category":"cond-mat.mes-hall","snapshot_observed_at":"2026-08-17T13:53:36.286661Z","submitted_at":"2026-05-14T20:18:31Z","title":"Radio-frequency reflectometry in silicon carbide large-area transistors"},"reference_resolution":{"displayed":39,"state_counts":{"malformed_identifier":1,"metadata_mismatch":0,"parse_uncertain":0,"unresolved":20,"verified_exact":1,"verified_fuzzy":17},"total_outbound_references":39},"refusal":"A citation records a reference. It does not transfer a finding from one paper to another.","schema":"pith.paper-citation-record.v1","standing_sources":[{"observed_at":"2026-08-23T06:30:58.430688+00:00","source":"crossref"},{"observed_at":"2026-08-23T06:30:53.778098+00:00","source":"retraction_watch"}],"thesis":"As of 23 August 2026, this Paper Citation Record lists 39 of 39 outbound references and 0 inbound Pith citation observations for arXiv:2605.15389."}