{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2021:5VHBVI64MXCLSSBE6OZVUDOB4T","short_pith_number":"pith:5VHBVI64","schema_version":"1.0","canonical_sha256":"ed4e1aa3dc65c4b94824f3b35a0dc1e4c4011b6ef19b2abe44bd712458427da8","source":{"kind":"arxiv","id":"2110.06586","version":1},"attestation_state":"computed","paper":{"title":"Selective hydrogenation improves interface properties of high-k dielectrics on 2D semiconductors","license":"http://creativecommons.org/licenses/by/4.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Hongyi Zhang, Jianwei Chai, Jun Zhou, Lai Mun Wong, Ming Yang, Shijie Wang, Tingting Song, Tong Yang, Wenzhang Zhu, Yulin Yang","submitted_at":"2021-10-13T09:00:02Z","abstract_excerpt":"The integration of high-k dielectrics with two-dimensional (2D) semiconductors is a critical step towards high-performance nanoelectronics, which however remains challenging due to high density of interface states and the damage to the monolayer 2D semiconductors. In this study, we propose a selective hydrogenation strategy to improve the interface properties while do not affect the 2D semiconductors. Using the interface of monolayer MoS2 and silicon nitride as an example, we show substantially improved interface properties for electronic applications after the interfacial hydrogenation, as ev"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"2110.06586","kind":"arxiv","version":1},"metadata":{"license":"http://creativecommons.org/licenses/by/4.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2021-10-13T09:00:02Z","cross_cats_sorted":[],"title_canon_sha256":"b0f1f1b0beafb5b1159c8e9d3adda0cff7b3940a6d160130004d93d6843c7531","abstract_canon_sha256":"ea020f85d3774205954ce40d87f2394e4e03553630afc4cde72117a0acb2df8c"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-07-05T03:22:27.617090Z","signature_b64":"27xZe4qihheGM5oeXJKqkcqiWakUdRVYe1Q97dgpudGbkXxBuzmRkTOJytGNnPmO7CkMRin6TgXYrRr9GOSDBQ==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"ed4e1aa3dc65c4b94824f3b35a0dc1e4c4011b6ef19b2abe44bd712458427da8","last_reissued_at":"2026-07-05T03:22:27.616553Z","signature_status":"signed_v1","first_computed_at":"2026-07-05T03:22:27.616553Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Selective hydrogenation improves interface properties of high-k dielectrics on 2D semiconductors","license":"http://creativecommons.org/licenses/by/4.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Hongyi Zhang, Jianwei Chai, Jun Zhou, Lai Mun Wong, Ming Yang, Shijie Wang, Tingting Song, Tong Yang, Wenzhang Zhu, Yulin Yang","submitted_at":"2021-10-13T09:00:02Z","abstract_excerpt":"The integration of high-k dielectrics with two-dimensional (2D) semiconductors is a critical step towards high-performance nanoelectronics, which however remains challenging due to high density of interface states and the damage to the monolayer 2D semiconductors. In this study, we propose a selective hydrogenation strategy to improve the interface properties while do not affect the 2D semiconductors. Using the interface of monolayer MoS2 and silicon nitride as an example, we show substantially improved interface properties for electronic applications after the interfacial hydrogenation, as ev"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"2110.06586","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/2110.06586/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"2110.06586","created_at":"2026-07-05T03:22:27.616628+00:00"},{"alias_kind":"arxiv_version","alias_value":"2110.06586v1","created_at":"2026-07-05T03:22:27.616628+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.2110.06586","created_at":"2026-07-05T03:22:27.616628+00:00"},{"alias_kind":"pith_short_12","alias_value":"5VHBVI64MXCL","created_at":"2026-07-05T03:22:27.616628+00:00"},{"alias_kind":"pith_short_16","alias_value":"5VHBVI64MXCLSSBE","created_at":"2026-07-05T03:22:27.616628+00:00"},{"alias_kind":"pith_short_8","alias_value":"5VHBVI64","created_at":"2026-07-05T03:22:27.616628+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/5VHBVI64MXCLSSBE6OZVUDOB4T","json":"https://pith.science/pith/5VHBVI64MXCLSSBE6OZVUDOB4T.json","graph_json":"https://pith.science/api/pith-number/5VHBVI64MXCLSSBE6OZVUDOB4T/graph.json","events_json":"https://pith.science/api/pith-number/5VHBVI64MXCLSSBE6OZVUDOB4T/events.json","paper":"https://pith.science/paper/5VHBVI64"},"agent_actions":{"view_html":"https://pith.science/pith/5VHBVI64MXCLSSBE6OZVUDOB4T","download_json":"https://pith.science/pith/5VHBVI64MXCLSSBE6OZVUDOB4T.json","view_paper":"https://pith.science/paper/5VHBVI64","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=2110.06586&json=true","fetch_graph":"https://pith.science/api/pith-number/5VHBVI64MXCLSSBE6OZVUDOB4T/graph.json","fetch_events":"https://pith.science/api/pith-number/5VHBVI64MXCLSSBE6OZVUDOB4T/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/5VHBVI64MXCLSSBE6OZVUDOB4T/action/timestamp_anchor","attest_storage":"https://pith.science/pith/5VHBVI64MXCLSSBE6OZVUDOB4T/action/storage_attestation","attest_author":"https://pith.science/pith/5VHBVI64MXCLSSBE6OZVUDOB4T/action/author_attestation","sign_citation":"https://pith.science/pith/5VHBVI64MXCLSSBE6OZVUDOB4T/action/citation_signature","submit_replication":"https://pith.science/pith/5VHBVI64MXCLSSBE6OZVUDOB4T/action/replication_record"}},"created_at":"2026-07-05T03:22:27.616628+00:00","updated_at":"2026-07-05T03:22:27.616628+00:00"}