{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2012:75TPF3EDG7GCMFAER7OJCWR3KJ","short_pith_number":"pith:75TPF3ED","schema_version":"1.0","canonical_sha256":"ff66f2ec8337cc2614048fdc915a3b524df4771f8d4f3342c0eabbc8947fc8a0","source":{"kind":"arxiv","id":"1210.3244","version":1},"attestation_state":"computed","paper":{"title":"On melting of silicon carbide under pressure","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Petr S. Sokolov, Thierry Chauveau, Vladimir A. Mukhanov, Vladimir L. Solozhenko","submitted_at":"2012-10-11T14:12:14Z","abstract_excerpt":"The melting of silicon carbide has been studied at pressures 5-8 GPa and temperatures up to 3300 K. It has been found that SiC melts congruently, and its melting curve has negative slope of -44 +/- 4 K/GPa."},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1210.3244","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2012-10-11T14:12:14Z","cross_cats_sorted":[],"title_canon_sha256":"579087f4c3bed807705e6213ed1bdf39f6d31aab995f086067af123a5fb0ce9b","abstract_canon_sha256":"e33f33a370b575210dfa54a0ffbe15bc36959f4a39200cc4a7f91a7b3ca44d6e"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-18T03:43:27.913300Z","signature_b64":"NmI/dbZ4s9UgZ8BiPjMsTq+Vtll8WRBFc5H+hlS0rrnluU5PFvvDtscMarvDvd1pcoL6v9HN0+dDhgZkG2wWCQ==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"ff66f2ec8337cc2614048fdc915a3b524df4771f8d4f3342c0eabbc8947fc8a0","last_reissued_at":"2026-05-18T03:43:27.912702Z","signature_status":"signed_v1","first_computed_at":"2026-05-18T03:43:27.912702Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"On melting of silicon carbide under pressure","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Petr S. Sokolov, Thierry Chauveau, Vladimir A. Mukhanov, Vladimir L. Solozhenko","submitted_at":"2012-10-11T14:12:14Z","abstract_excerpt":"The melting of silicon carbide has been studied at pressures 5-8 GPa and temperatures up to 3300 K. It has been found that SiC melts congruently, and its melting curve has negative slope of -44 +/- 4 K/GPa."},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1210.3244","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"1210.3244","created_at":"2026-05-18T03:43:27.912794+00:00"},{"alias_kind":"arxiv_version","alias_value":"1210.3244v1","created_at":"2026-05-18T03:43:27.912794+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1210.3244","created_at":"2026-05-18T03:43:27.912794+00:00"},{"alias_kind":"pith_short_12","alias_value":"75TPF3EDG7GC","created_at":"2026-05-18T12:26:56.085431+00:00"},{"alias_kind":"pith_short_16","alias_value":"75TPF3EDG7GCMFAE","created_at":"2026-05-18T12:26:56.085431+00:00"},{"alias_kind":"pith_short_8","alias_value":"75TPF3ED","created_at":"2026-05-18T12:26:56.085431+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/75TPF3EDG7GCMFAER7OJCWR3KJ","json":"https://pith.science/pith/75TPF3EDG7GCMFAER7OJCWR3KJ.json","graph_json":"https://pith.science/api/pith-number/75TPF3EDG7GCMFAER7OJCWR3KJ/graph.json","events_json":"https://pith.science/api/pith-number/75TPF3EDG7GCMFAER7OJCWR3KJ/events.json","paper":"https://pith.science/paper/75TPF3ED"},"agent_actions":{"view_html":"https://pith.science/pith/75TPF3EDG7GCMFAER7OJCWR3KJ","download_json":"https://pith.science/pith/75TPF3EDG7GCMFAER7OJCWR3KJ.json","view_paper":"https://pith.science/paper/75TPF3ED","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=1210.3244&json=true","fetch_graph":"https://pith.science/api/pith-number/75TPF3EDG7GCMFAER7OJCWR3KJ/graph.json","fetch_events":"https://pith.science/api/pith-number/75TPF3EDG7GCMFAER7OJCWR3KJ/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/75TPF3EDG7GCMFAER7OJCWR3KJ/action/timestamp_anchor","attest_storage":"https://pith.science/pith/75TPF3EDG7GCMFAER7OJCWR3KJ/action/storage_attestation","attest_author":"https://pith.science/pith/75TPF3EDG7GCMFAER7OJCWR3KJ/action/author_attestation","sign_citation":"https://pith.science/pith/75TPF3EDG7GCMFAER7OJCWR3KJ/action/citation_signature","submit_replication":"https://pith.science/pith/75TPF3EDG7GCMFAER7OJCWR3KJ/action/replication_record"}},"created_at":"2026-05-18T03:43:27.912794+00:00","updated_at":"2026-05-18T03:43:27.912794+00:00"}