{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2014:7LJY654KR6XYZ6ZHQOZDJPNWSN","short_pith_number":"pith:7LJY654K","schema_version":"1.0","canonical_sha256":"fad38f778a8faf8cfb2783b234bdb6936bd38c60da35a33e02efcfb9c93c6e06","source":{"kind":"arxiv","id":"1406.7475","version":1},"attestation_state":"computed","paper":{"title":"Charge Offset Stability in Si Single Electron Devices with Al Gates","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Andrew S. Dzurak, Chih-Hwan Yang, Nai Shyan Lai, Neil M. Zimmerman, Wee Han Lim","submitted_at":"2014-06-29T09:02:46Z","abstract_excerpt":"We report on the charge offset drift (time stability) in Si single electron devices (SEDs) defined with aluminum (Al) gates. The size of the charge offset drift (0.15 $e$) is intermediate between that of Al/AlO$_x$/Al tunnel junctions (greater than 1 $e$) and Si SEDs defined with Si gates (0.01 $e$). This range of values suggests that defects in the AlO$_x$ are the main cause of the charge offset drift instability."},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1406.7475","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mes-hall","submitted_at":"2014-06-29T09:02:46Z","cross_cats_sorted":[],"title_canon_sha256":"26d49f230376ac65010c7594a9fdeaa1b8c5ba660d35f3edd9af927dc660d64b","abstract_canon_sha256":"4811e16a85a86699e4b0dcc40595287fe94213e6ad0a0249eb5b72b82424df50"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-18T01:42:45.397021Z","signature_b64":"h/TxfF1R6fFaeCaIxyGdusnsYmtu4LPFzcEFyocoav4DOIp0QAZIXSVdaRdQ7N0Wo160Q44eqLY8DMPwp1TuDg==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"fad38f778a8faf8cfb2783b234bdb6936bd38c60da35a33e02efcfb9c93c6e06","last_reissued_at":"2026-05-18T01:42:45.396496Z","signature_status":"signed_v1","first_computed_at":"2026-05-18T01:42:45.396496Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Charge Offset Stability in Si Single Electron Devices with Al Gates","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Andrew S. Dzurak, Chih-Hwan Yang, Nai Shyan Lai, Neil M. Zimmerman, Wee Han Lim","submitted_at":"2014-06-29T09:02:46Z","abstract_excerpt":"We report on the charge offset drift (time stability) in Si single electron devices (SEDs) defined with aluminum (Al) gates. The size of the charge offset drift (0.15 $e$) is intermediate between that of Al/AlO$_x$/Al tunnel junctions (greater than 1 $e$) and Si SEDs defined with Si gates (0.01 $e$). This range of values suggests that defects in the AlO$_x$ are the main cause of the charge offset drift instability."},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1406.7475","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"1406.7475","created_at":"2026-05-18T01:42:45.396594+00:00"},{"alias_kind":"arxiv_version","alias_value":"1406.7475v1","created_at":"2026-05-18T01:42:45.396594+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1406.7475","created_at":"2026-05-18T01:42:45.396594+00:00"},{"alias_kind":"pith_short_12","alias_value":"7LJY654KR6XY","created_at":"2026-05-18T12:28:19.803747+00:00"},{"alias_kind":"pith_short_16","alias_value":"7LJY654KR6XYZ6ZH","created_at":"2026-05-18T12:28:19.803747+00:00"},{"alias_kind":"pith_short_8","alias_value":"7LJY654K","created_at":"2026-05-18T12:28:19.803747+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/7LJY654KR6XYZ6ZHQOZDJPNWSN","json":"https://pith.science/pith/7LJY654KR6XYZ6ZHQOZDJPNWSN.json","graph_json":"https://pith.science/api/pith-number/7LJY654KR6XYZ6ZHQOZDJPNWSN/graph.json","events_json":"https://pith.science/api/pith-number/7LJY654KR6XYZ6ZHQOZDJPNWSN/events.json","paper":"https://pith.science/paper/7LJY654K"},"agent_actions":{"view_html":"https://pith.science/pith/7LJY654KR6XYZ6ZHQOZDJPNWSN","download_json":"https://pith.science/pith/7LJY654KR6XYZ6ZHQOZDJPNWSN.json","view_paper":"https://pith.science/paper/7LJY654K","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=1406.7475&json=true","fetch_graph":"https://pith.science/api/pith-number/7LJY654KR6XYZ6ZHQOZDJPNWSN/graph.json","fetch_events":"https://pith.science/api/pith-number/7LJY654KR6XYZ6ZHQOZDJPNWSN/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/7LJY654KR6XYZ6ZHQOZDJPNWSN/action/timestamp_anchor","attest_storage":"https://pith.science/pith/7LJY654KR6XYZ6ZHQOZDJPNWSN/action/storage_attestation","attest_author":"https://pith.science/pith/7LJY654KR6XYZ6ZHQOZDJPNWSN/action/author_attestation","sign_citation":"https://pith.science/pith/7LJY654KR6XYZ6ZHQOZDJPNWSN/action/citation_signature","submit_replication":"https://pith.science/pith/7LJY654KR6XYZ6ZHQOZDJPNWSN/action/replication_record"}},"created_at":"2026-05-18T01:42:45.396594+00:00","updated_at":"2026-05-18T01:42:45.396594+00:00"}