pith:7WMUF5WM
Seed Layer Engineering for Effective Charge Transfer Doping of MoS$_2$ Transistors
The thickness and oxygen content during deposition of a Ta seed layer control both disorder and charge-transfer doping at the HfOx-MoS2 interface, directly setting transistor threshold voltage and on-current.
arxiv:2604.17729 v2 · 2026-04-20 · cond-mat.mtrl-sci
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Claims
The seed layer both introduces disorder into the MoS2 channel and modifies the interfacial charge environment controlling charge transfer between HfOx and MoS2. Better performance was obtained with ultrathin 0.2 nm Ta seed layers deposited under oxygen-poor conditions, which limit deposition-induced damage while facilitating charge transfer.
That the strong correlations between seed thickness/conditions, electrical metrics, and spectroscopic signatures are caused by seed-induced disorder and interfacial charge transfer rather than other uncontrolled variables in fabrication or measurement.
Ultrathin 0.2 nm Ta seed layers deposited under oxygen-poor conditions optimize MoS2 transistor performance by limiting disorder while enabling effective charge transfer doping from the HfOx dielectric.
Receipt and verification
| First computed | 2026-06-05T01:15:23.697877Z |
|---|---|
| Builder | pith-number-builder-2026-05-17-v1 |
| Signature | Pith Ed25519
(pith-v1-2026-05) · public key |
| Schema | pith-number/v1.0 |
Canonical hash
fd9942f6cc3861d2662b8a859f9e7570f1ad7996e00de18a9ec761f1a75add29
Aliases
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Verify this Pith Number yourself
curl -sH 'Accept: application/ld+json' https://pith.science/pith/7WMUF5WMHBQ5EZRLRKCZ7HTVOD \
| jq -c '.canonical_record' \
| python3 -c "import sys,json,hashlib; b=json.dumps(json.loads(sys.stdin.read()), sort_keys=True, separators=(',',':'), ensure_ascii=False).encode(); print(hashlib.sha256(b).hexdigest())"
# expect: fd9942f6cc3861d2662b8a859f9e7570f1ad7996e00de18a9ec761f1a75add29
Canonical record JSON
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