{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2017:IBOTS7ZDNACGRSQT22LPFPK246","short_pith_number":"pith:IBOTS7ZD","schema_version":"1.0","canonical_sha256":"405d397f23680468ca13d696f2bd5ae7829fe768fad8c2df93f9cda8f96ab15b","source":{"kind":"arxiv","id":"1704.05379","version":1},"attestation_state":"computed","paper":{"title":"High current density electrical breakdown of TiS3 nanoribbon-based field-effect transistors","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Aday J. Molina-Mendoza, Andres Castellanos-Gomez, Carlos S\\'anchez, Eduardo Flores, Fabrice Leardini, Gabino Rubio-Bollinger, Herre S. J. van der Zant, Isabel J. Ferrer, J.J. Palacios, Jose Manuel Clamagirand, Jose Ram\\'on Ares, Joshua O. Island, Nicol\\'as Agra\\\"it, Wendel S. Paz","submitted_at":"2017-04-18T14:55:30Z","abstract_excerpt":"The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, we study here the high current density properties of the layered material titanium trisulfide (TiS3). We observe high breakdown current densities up to 1.7 10^6 A/cm^2 in TiS3 nanoribbon-based field-effect transistors which are among the highest found in semiconducting nanomateri"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1704.05379","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mes-hall","submitted_at":"2017-04-18T14:55:30Z","cross_cats_sorted":[],"title_canon_sha256":"8f930ea4a2e5adc15d5582724fadfed0f6a3d24e616d99153b645c11bb695fd1","abstract_canon_sha256":"7a2025362930298999bd6c3696a3329598275b6c0edcbb4d23f0e4dbc1dd35ae"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-18T00:46:11.177162Z","signature_b64":"dbrddvMuD/yz45Syb9AgX3xn5MB9MUPlVCJymdxIA5OsxuywK7EK7VjHtdTbVyFAFSZqaUzkVppTWl2A8lZeBg==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"405d397f23680468ca13d696f2bd5ae7829fe768fad8c2df93f9cda8f96ab15b","last_reissued_at":"2026-05-18T00:46:11.176584Z","signature_status":"signed_v1","first_computed_at":"2026-05-18T00:46:11.176584Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"High current density electrical breakdown of TiS3 nanoribbon-based field-effect transistors","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Aday J. Molina-Mendoza, Andres Castellanos-Gomez, Carlos S\\'anchez, Eduardo Flores, Fabrice Leardini, Gabino Rubio-Bollinger, Herre S. J. van der Zant, Isabel J. Ferrer, J.J. Palacios, Jose Manuel Clamagirand, Jose Ram\\'on Ares, Joshua O. Island, Nicol\\'as Agra\\\"it, Wendel S. Paz","submitted_at":"2017-04-18T14:55:30Z","abstract_excerpt":"The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, we study here the high current density properties of the layered material titanium trisulfide (TiS3). We observe high breakdown current densities up to 1.7 10^6 A/cm^2 in TiS3 nanoribbon-based field-effect transistors which are among the highest found in semiconducting nanomateri"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1704.05379","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"1704.05379","created_at":"2026-05-18T00:46:11.176695+00:00"},{"alias_kind":"arxiv_version","alias_value":"1704.05379v1","created_at":"2026-05-18T00:46:11.176695+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1704.05379","created_at":"2026-05-18T00:46:11.176695+00:00"},{"alias_kind":"pith_short_12","alias_value":"IBOTS7ZDNACG","created_at":"2026-05-18T12:31:21.493067+00:00"},{"alias_kind":"pith_short_16","alias_value":"IBOTS7ZDNACGRSQT","created_at":"2026-05-18T12:31:21.493067+00:00"},{"alias_kind":"pith_short_8","alias_value":"IBOTS7ZD","created_at":"2026-05-18T12:31:21.493067+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/IBOTS7ZDNACGRSQT22LPFPK246","json":"https://pith.science/pith/IBOTS7ZDNACGRSQT22LPFPK246.json","graph_json":"https://pith.science/api/pith-number/IBOTS7ZDNACGRSQT22LPFPK246/graph.json","events_json":"https://pith.science/api/pith-number/IBOTS7ZDNACGRSQT22LPFPK246/events.json","paper":"https://pith.science/paper/IBOTS7ZD"},"agent_actions":{"view_html":"https://pith.science/pith/IBOTS7ZDNACGRSQT22LPFPK246","download_json":"https://pith.science/pith/IBOTS7ZDNACGRSQT22LPFPK246.json","view_paper":"https://pith.science/paper/IBOTS7ZD","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=1704.05379&json=true","fetch_graph":"https://pith.science/api/pith-number/IBOTS7ZDNACGRSQT22LPFPK246/graph.json","fetch_events":"https://pith.science/api/pith-number/IBOTS7ZDNACGRSQT22LPFPK246/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/IBOTS7ZDNACGRSQT22LPFPK246/action/timestamp_anchor","attest_storage":"https://pith.science/pith/IBOTS7ZDNACGRSQT22LPFPK246/action/storage_attestation","attest_author":"https://pith.science/pith/IBOTS7ZDNACGRSQT22LPFPK246/action/author_attestation","sign_citation":"https://pith.science/pith/IBOTS7ZDNACGRSQT22LPFPK246/action/citation_signature","submit_replication":"https://pith.science/pith/IBOTS7ZDNACGRSQT22LPFPK246/action/replication_record"}},"created_at":"2026-05-18T00:46:11.176695+00:00","updated_at":"2026-05-18T00:46:11.176695+00:00"}