{"bundle_type":"pith_open_graph_bundle","bundle_version":"1.0","pith_number":"pith:2017:R6LRXCWJQV2IHVNJH2CSBRJMCR","short_pith_number":"pith:R6LRXCWJ","canonical_record":{"source":{"id":"1711.03324","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2017-11-09T11:14:36Z","cross_cats_sorted":[],"title_canon_sha256":"5fa56aeed64d6c73bd6261d3af57d07c49d7b243347d62d6e130025877cfd4db","abstract_canon_sha256":"8a94d060ed2cf2bce781e60cacc6ceb85da4f6e221e0a186e1eace5713a60f01"},"schema_version":"1.0"},"canonical_sha256":"8f971b8ac9857483d5a93e8520c52c146107c1b6d762f2dda0708c1604731002","source":{"kind":"arxiv","id":"1711.03324","version":1},"source_aliases":[{"alias_kind":"arxiv","alias_value":"1711.03324","created_at":"2026-05-18T00:29:51Z"},{"alias_kind":"arxiv_version","alias_value":"1711.03324v1","created_at":"2026-05-18T00:29:51Z"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1711.03324","created_at":"2026-05-18T00:29:51Z"},{"alias_kind":"pith_short_12","alias_value":"R6LRXCWJQV2I","created_at":"2026-05-18T12:31:39Z"},{"alias_kind":"pith_short_16","alias_value":"R6LRXCWJQV2IHVNJ","created_at":"2026-05-18T12:31:39Z"},{"alias_kind":"pith_short_8","alias_value":"R6LRXCWJ","created_at":"2026-05-18T12:31:39Z"}],"events":[{"event_type":"record_created","subject_pith_number":"pith:2017:R6LRXCWJQV2IHVNJH2CSBRJMCR","target":"record","payload":{"canonical_record":{"source":{"id":"1711.03324","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2017-11-09T11:14:36Z","cross_cats_sorted":[],"title_canon_sha256":"5fa56aeed64d6c73bd6261d3af57d07c49d7b243347d62d6e130025877cfd4db","abstract_canon_sha256":"8a94d060ed2cf2bce781e60cacc6ceb85da4f6e221e0a186e1eace5713a60f01"},"schema_version":"1.0"},"canonical_sha256":"8f971b8ac9857483d5a93e8520c52c146107c1b6d762f2dda0708c1604731002","receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-18T00:29:51.083955Z","signature_b64":"C6ZB5z+30Vgfcs/niyh31UNx58S5XmYw62fsgabv4Y1hn0fgFXpoIFiwOLQIbr+Hs8UVHJ+XmP3q0LdwiyOPBg==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"8f971b8ac9857483d5a93e8520c52c146107c1b6d762f2dda0708c1604731002","last_reissued_at":"2026-05-18T00:29:51.083404Z","signature_status":"signed_v1","first_computed_at":"2026-05-18T00:29:51.083404Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"source_kind":"arxiv","source_id":"1711.03324","source_version":1,"attestation_state":"computed"},"signer":{"signer_id":"pith.science","signer_type":"pith_registry","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"created_at":"2026-05-18T00:29:51Z","supersedes":[],"prev_event":null,"signature":{"signature_status":"signed_v1","algorithm":"ed25519","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signature_b64":"mHAwwIlEhgc/n8pZlAvdYKyF5MKYrhbkn3m6uLAhXBSJ7UvnOBwIUqMgeGfClegpfytDb5iTi4OwJjFCyAnMCw==","signed_message":"open_graph_event_sha256_bytes","signed_at":"2026-06-24T00:34:10.234799Z"},"content_sha256":"30fcd5a9ed7d200d44c7f9e8791538e07503dd0004bdb0f7d1d1d36cc9423737","schema_version":"1.0","event_id":"sha256:30fcd5a9ed7d200d44c7f9e8791538e07503dd0004bdb0f7d1d1d36cc9423737"},{"event_type":"graph_snapshot","subject_pith_number":"pith:2017:R6LRXCWJQV2IHVNJH2CSBRJMCR","target":"graph","payload":{"graph_snapshot":{"paper":{"title":"Thickness Dependent Parasitic Channel Formation at AlN/Si Interfaces","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Hareesh Chandrasekar, K N Bhat, Muralidharan Rangarajan, Navakanta Bhat, Srinivasan Raghavan","submitted_at":"2017-11-09T11:14:36Z","abstract_excerpt":"The performance of GaN-on-Silicon electronic devices is severely degraded by the presence of a parasitic conduction pathway at the nitride-substrate interface which contributes to switching losses and lower breakdown voltages. The physical nature of such a parasitic channel and its properties are however, not well understood. We report on a pronounced thickness dependence of the parasitic channel formation at AlN/Si interfaces due to increased surface acceptor densities at the interface in silicon. The origin of these surface acceptors is analyzed using secondary ion mass spectroscopy measurem"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1711.03324","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"verdict_id":null},"signer":{"signer_id":"pith.science","signer_type":"pith_registry","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"created_at":"2026-05-18T00:29:51Z","supersedes":[],"prev_event":null,"signature":{"signature_status":"signed_v1","algorithm":"ed25519","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signature_b64":"5lU+CK9OJELv/VQR6gws18EmFrWQ7iTq3POEH5qaHmtVzoRTPBo7I6BZCo26F8Al/6oZmv1POFMSIcJPfSD9BQ==","signed_message":"open_graph_event_sha256_bytes","signed_at":"2026-06-24T00:34:10.235133Z"},"content_sha256":"47d95780f5ae0952d263b10bf195cce58a24df4d4fc1a1fa73709ed4595e43ea","schema_version":"1.0","event_id":"sha256:47d95780f5ae0952d263b10bf195cce58a24df4d4fc1a1fa73709ed4595e43ea"}],"timestamp_proofs":[],"mirror_hints":[{"mirror_type":"https","name":"Pith Resolver","base_url":"https://pith.science","bundle_url":"https://pith.science/pith/R6LRXCWJQV2IHVNJH2CSBRJMCR/bundle.json","state_url":"https://pith.science/pith/R6LRXCWJQV2IHVNJH2CSBRJMCR/state.json","well_known_bundle_url":"https://pith.science/.well-known/pith/R6LRXCWJQV2IHVNJH2CSBRJMCR/bundle.json","status":"primary"}],"public_keys":[{"key_id":"pith-v1-2026-05","algorithm":"ed25519","format":"raw","public_key_b64":"stVStoiQhXFxp4s2pdzPNoqVNBMojDU/fJ2db5S3CbM=","public_key_hex":"b2d552b68890857171a78b36a5dccf368a953413288c353f7c9d9d6f94b709b3","fingerprint_sha256_b32_first128bits":"RVFV5Z2OI2J3ZUO7ERDEBCYNKS","fingerprint_sha256_hex":"8d4b5ee74e4693bcd1df2446408b0d54","rotates_at":null,"url":"https://pith.science/pith-signing-key.json","notes":"Pith uses this Ed25519 key to sign canonical record SHA-256 digests. Verify with: ed25519_verify(public_key, message=canonical_sha256_bytes, signature=base64decode(signature_b64))."}],"merge_version":"pith-open-graph-merge-v1","built_at":"2026-06-24T00:34:10Z","links":{"resolver":"https://pith.science/pith/R6LRXCWJQV2IHVNJH2CSBRJMCR","bundle":"https://pith.science/pith/R6LRXCWJQV2IHVNJH2CSBRJMCR/bundle.json","state":"https://pith.science/pith/R6LRXCWJQV2IHVNJH2CSBRJMCR/state.json","well_known_bundle":"https://pith.science/.well-known/pith/R6LRXCWJQV2IHVNJH2CSBRJMCR/bundle.json"},"state":{"state_type":"pith_open_graph_state","state_version":"1.0","pith_number":"pith:2017:R6LRXCWJQV2IHVNJH2CSBRJMCR","merge_version":"pith-open-graph-merge-v1","event_count":2,"valid_event_count":2,"invalid_event_count":0,"equivocation_count":0,"current":{"canonical_record":{"metadata":{"abstract_canon_sha256":"8a94d060ed2cf2bce781e60cacc6ceb85da4f6e221e0a186e1eace5713a60f01","cross_cats_sorted":[],"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2017-11-09T11:14:36Z","title_canon_sha256":"5fa56aeed64d6c73bd6261d3af57d07c49d7b243347d62d6e130025877cfd4db"},"schema_version":"1.0","source":{"id":"1711.03324","kind":"arxiv","version":1}},"source_aliases":[{"alias_kind":"arxiv","alias_value":"1711.03324","created_at":"2026-05-18T00:29:51Z"},{"alias_kind":"arxiv_version","alias_value":"1711.03324v1","created_at":"2026-05-18T00:29:51Z"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1711.03324","created_at":"2026-05-18T00:29:51Z"},{"alias_kind":"pith_short_12","alias_value":"R6LRXCWJQV2I","created_at":"2026-05-18T12:31:39Z"},{"alias_kind":"pith_short_16","alias_value":"R6LRXCWJQV2IHVNJ","created_at":"2026-05-18T12:31:39Z"},{"alias_kind":"pith_short_8","alias_value":"R6LRXCWJ","created_at":"2026-05-18T12:31:39Z"}],"graph_snapshots":[{"event_id":"sha256:47d95780f5ae0952d263b10bf195cce58a24df4d4fc1a1fa73709ed4595e43ea","target":"graph","created_at":"2026-05-18T00:29:51Z","signer":{"key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signer_id":"pith.science","signer_type":"pith_registry"},"payload":{"graph_snapshot":{"author_claims":{"count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","strong_count":0},"builder_version":"pith-number-builder-2026-05-17-v1","claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"paper":{"abstract_excerpt":"The performance of GaN-on-Silicon electronic devices is severely degraded by the presence of a parasitic conduction pathway at the nitride-substrate interface which contributes to switching losses and lower breakdown voltages. The physical nature of such a parasitic channel and its properties are however, not well understood. We report on a pronounced thickness dependence of the parasitic channel formation at AlN/Si interfaces due to increased surface acceptor densities at the interface in silicon. The origin of these surface acceptors is analyzed using secondary ion mass spectroscopy measurem","authors_text":"Hareesh Chandrasekar, K N Bhat, Muralidharan Rangarajan, Navakanta Bhat, Srinivasan Raghavan","cross_cats":[],"headline":"","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2017-11-09T11:14:36Z","title":"Thickness Dependent Parasitic Channel Formation at AlN/Si Interfaces"},"references":{"count":0,"internal_anchors":0,"resolved_work":0,"sample":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1711.03324","kind":"arxiv","version":1},"verdict":{"created_at":null,"id":null,"model_set":{},"one_line_summary":"","pipeline_version":null,"pith_extraction_headline":"","strongest_claim":"","weakest_assumption":""}},"verdict_id":null}}],"author_attestations":[],"timestamp_anchors":[],"storage_attestations":[],"citation_signatures":[],"replication_records":[],"corrections":[],"mirror_hints":[],"record_created":{"event_id":"sha256:30fcd5a9ed7d200d44c7f9e8791538e07503dd0004bdb0f7d1d1d36cc9423737","target":"record","created_at":"2026-05-18T00:29:51Z","signer":{"key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signer_id":"pith.science","signer_type":"pith_registry"},"payload":{"attestation_state":"computed","canonical_record":{"metadata":{"abstract_canon_sha256":"8a94d060ed2cf2bce781e60cacc6ceb85da4f6e221e0a186e1eace5713a60f01","cross_cats_sorted":[],"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2017-11-09T11:14:36Z","title_canon_sha256":"5fa56aeed64d6c73bd6261d3af57d07c49d7b243347d62d6e130025877cfd4db"},"schema_version":"1.0","source":{"id":"1711.03324","kind":"arxiv","version":1}},"canonical_sha256":"8f971b8ac9857483d5a93e8520c52c146107c1b6d762f2dda0708c1604731002","receipt":{"algorithm":"ed25519","builder_version":"pith-number-builder-2026-05-17-v1","canonical_sha256":"8f971b8ac9857483d5a93e8520c52c146107c1b6d762f2dda0708c1604731002","first_computed_at":"2026-05-18T00:29:51.083404Z","key_id":"pith-v1-2026-05","kind":"pith_receipt","last_reissued_at":"2026-05-18T00:29:51.083404Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","receipt_version":"0.3","signature_b64":"C6ZB5z+30Vgfcs/niyh31UNx58S5XmYw62fsgabv4Y1hn0fgFXpoIFiwOLQIbr+Hs8UVHJ+XmP3q0LdwiyOPBg==","signature_status":"signed_v1","signed_at":"2026-05-18T00:29:51.083955Z","signed_message":"canonical_sha256_bytes"},"source_id":"1711.03324","source_kind":"arxiv","source_version":1}}},"equivocations":[],"invalid_events":[],"applied_event_ids":["sha256:30fcd5a9ed7d200d44c7f9e8791538e07503dd0004bdb0f7d1d1d36cc9423737","sha256:47d95780f5ae0952d263b10bf195cce58a24df4d4fc1a1fa73709ed4595e43ea"],"state_sha256":"cdf100485306dbc99723548270dc741aff5fd5afb7994f4367adb2d1709d3849"},"bundle_signature":{"signature_status":"signed_v1","algorithm":"ed25519","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signature_b64":"71T/Yu7D/DVjYkyCu6jpK/0IpkbbaVWCRZXWMWo+3amcPKbyrK3wHoflrKjMatlXExmU7gDEXbNR7Cm/9K1LCA==","signed_message":"bundle_sha256_bytes","signed_at":"2026-06-24T00:34:10.236967Z","bundle_sha256":"38101dd8bfb8e7fc23a95e30cc4df7e894d786b51c0d922b669dae9aaf334def"}}