{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2020:TCCTLEO2SBI3OODSXICVFM6UOD","short_pith_number":"pith:TCCTLEO2","schema_version":"1.0","canonical_sha256":"98853591da9051b73872ba0552b3d470cdee19186e5c159067d92e28eb03eca9","source":{"kind":"arxiv","id":"2002.02839","version":1},"attestation_state":"computed","paper":{"title":"Transferrable AlGaN/GaN HEMTs to Arbitrary Substrates via a Two-dimensional Boron Nitride Release Layer","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mtrl-sci"],"primary_cat":"physics.app-ph","authors_text":"Al Hilton, Chris Muratore, Eric Blanton, Eric Heller, Jeff Brown, Katherine Burzynski, Kelson Chabak, Michael Durstock, Michael J. Motala, Michael Snure, Nicholas Glavin","submitted_at":"2020-02-07T15:24:12Z","abstract_excerpt":"Mechanical transfer of high performing thin film devices onto arbitrary substrates represents an exciting opportunity to improve device performance, explore non-traditional manufacturing approaches, and paves the way for soft, conformal, and flexible electronics. Using a two-dimensional (2D) boron nitride (BN) release layer, we demonstrate the transfer of AlGaN/GaN high-electron mobility transistors (HEMTs) to arbitrary substrates through both direct van der Waals (vdW) bonding and with a polymer adhesive interlayer. No device degradation was observed due to the transfer process, and a signifi"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"2002.02839","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"physics.app-ph","submitted_at":"2020-02-07T15:24:12Z","cross_cats_sorted":["cond-mat.mtrl-sci"],"title_canon_sha256":"50b04fee5880bd6b75553940ea5a7b5539a7d805eee96dd2c9b99288f02b2b7c","abstract_canon_sha256":"d72612d9ea24c296b12a4ba336e89c908eea5d9861fc11977e3e8a196eb2a293"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-07-05T02:43:42.406158Z","signature_b64":"cbBQ9N3yHk47oh5lu6R+C1ElGd4nmLFB2A4T9pIpagEVYOi+Ly+eeV+DNIO4qxDeZ0/PEUDrBx0Nqqn25WFDDw==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"98853591da9051b73872ba0552b3d470cdee19186e5c159067d92e28eb03eca9","last_reissued_at":"2026-07-05T02:43:42.405537Z","signature_status":"signed_v1","first_computed_at":"2026-07-05T02:43:42.405537Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Transferrable AlGaN/GaN HEMTs to Arbitrary Substrates via a Two-dimensional Boron Nitride Release Layer","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mtrl-sci"],"primary_cat":"physics.app-ph","authors_text":"Al Hilton, Chris Muratore, Eric Blanton, Eric Heller, Jeff Brown, Katherine Burzynski, Kelson Chabak, Michael Durstock, Michael J. Motala, Michael Snure, Nicholas Glavin","submitted_at":"2020-02-07T15:24:12Z","abstract_excerpt":"Mechanical transfer of high performing thin film devices onto arbitrary substrates represents an exciting opportunity to improve device performance, explore non-traditional manufacturing approaches, and paves the way for soft, conformal, and flexible electronics. Using a two-dimensional (2D) boron nitride (BN) release layer, we demonstrate the transfer of AlGaN/GaN high-electron mobility transistors (HEMTs) to arbitrary substrates through both direct van der Waals (vdW) bonding and with a polymer adhesive interlayer. No device degradation was observed due to the transfer process, and a signifi"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"2002.02839","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/2002.02839/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"2002.02839","created_at":"2026-07-05T02:43:42.405601+00:00"},{"alias_kind":"arxiv_version","alias_value":"2002.02839v1","created_at":"2026-07-05T02:43:42.405601+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.2002.02839","created_at":"2026-07-05T02:43:42.405601+00:00"},{"alias_kind":"pith_short_12","alias_value":"TCCTLEO2SBI3","created_at":"2026-07-05T02:43:42.405601+00:00"},{"alias_kind":"pith_short_16","alias_value":"TCCTLEO2SBI3OODS","created_at":"2026-07-05T02:43:42.405601+00:00"},{"alias_kind":"pith_short_8","alias_value":"TCCTLEO2","created_at":"2026-07-05T02:43:42.405601+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/TCCTLEO2SBI3OODSXICVFM6UOD","json":"https://pith.science/pith/TCCTLEO2SBI3OODSXICVFM6UOD.json","graph_json":"https://pith.science/api/pith-number/TCCTLEO2SBI3OODSXICVFM6UOD/graph.json","events_json":"https://pith.science/api/pith-number/TCCTLEO2SBI3OODSXICVFM6UOD/events.json","paper":"https://pith.science/paper/TCCTLEO2"},"agent_actions":{"view_html":"https://pith.science/pith/TCCTLEO2SBI3OODSXICVFM6UOD","download_json":"https://pith.science/pith/TCCTLEO2SBI3OODSXICVFM6UOD.json","view_paper":"https://pith.science/paper/TCCTLEO2","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=2002.02839&json=true","fetch_graph":"https://pith.science/api/pith-number/TCCTLEO2SBI3OODSXICVFM6UOD/graph.json","fetch_events":"https://pith.science/api/pith-number/TCCTLEO2SBI3OODSXICVFM6UOD/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/TCCTLEO2SBI3OODSXICVFM6UOD/action/timestamp_anchor","attest_storage":"https://pith.science/pith/TCCTLEO2SBI3OODSXICVFM6UOD/action/storage_attestation","attest_author":"https://pith.science/pith/TCCTLEO2SBI3OODSXICVFM6UOD/action/author_attestation","sign_citation":"https://pith.science/pith/TCCTLEO2SBI3OODSXICVFM6UOD/action/citation_signature","submit_replication":"https://pith.science/pith/TCCTLEO2SBI3OODSXICVFM6UOD/action/replication_record"}},"created_at":"2026-07-05T02:43:42.405601+00:00","updated_at":"2026-07-05T02:43:42.405601+00:00"}