{"bundle_type":"pith_open_graph_bundle","bundle_version":"1.0","pith_number":"pith:2004:UCBZAD2GVECVTYXFSPUB4XM5IF","short_pith_number":"pith:UCBZAD2G","canonical_record":{"source":{"id":"cond-mat/0411185","kind":"arxiv","version":1},"metadata":{"license":"","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2004-11-08T09:08:41Z","cross_cats_sorted":[],"title_canon_sha256":"0cced4f5c20b81350d05364c2f352e9ea9686fff366ece80e53eb71639ad105b","abstract_canon_sha256":"6e702007952e2ac7a4777e8e6f973236fab29478877be630172f486ba580bacc"},"schema_version":"1.0"},"canonical_sha256":"a083900f46a90559e2e593e81e5d9d414181e629ada1aef0df8129edcd94b38d","source":{"kind":"arxiv","id":"cond-mat/0411185","version":1},"source_aliases":[{"alias_kind":"arxiv","alias_value":"cond-mat/0411185","created_at":"2026-07-04T14:49:30Z"},{"alias_kind":"arxiv_version","alias_value":"cond-mat/0411185v1","created_at":"2026-07-04T14:49:30Z"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.cond-mat/0411185","created_at":"2026-07-04T14:49:30Z"},{"alias_kind":"pith_short_12","alias_value":"UCBZAD2GVECV","created_at":"2026-07-04T14:49:30Z"},{"alias_kind":"pith_short_16","alias_value":"UCBZAD2GVECVTYXF","created_at":"2026-07-04T14:49:30Z"},{"alias_kind":"pith_short_8","alias_value":"UCBZAD2G","created_at":"2026-07-04T14:49:30Z"}],"events":[{"event_type":"record_created","subject_pith_number":"pith:2004:UCBZAD2GVECVTYXFSPUB4XM5IF","target":"record","payload":{"canonical_record":{"source":{"id":"cond-mat/0411185","kind":"arxiv","version":1},"metadata":{"license":"","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2004-11-08T09:08:41Z","cross_cats_sorted":[],"title_canon_sha256":"0cced4f5c20b81350d05364c2f352e9ea9686fff366ece80e53eb71639ad105b","abstract_canon_sha256":"6e702007952e2ac7a4777e8e6f973236fab29478877be630172f486ba580bacc"},"schema_version":"1.0"},"canonical_sha256":"a083900f46a90559e2e593e81e5d9d414181e629ada1aef0df8129edcd94b38d","receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-07-04T14:49:30.843960Z","signature_b64":"oPWnHR+WILXkgFC6Bv1uMo1ZfREZcUBEaR55/GqcIp2VS6CZtgVy9OfUjAowaHbus6lrwKuMzSYviw+uWZVKCA==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"a083900f46a90559e2e593e81e5d9d414181e629ada1aef0df8129edcd94b38d","last_reissued_at":"2026-07-04T14:49:30.843585Z","signature_status":"signed_v1","first_computed_at":"2026-07-04T14:49:30.843585Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"source_kind":"arxiv","source_id":"cond-mat/0411185","source_version":1,"attestation_state":"computed"},"signer":{"signer_id":"pith.science","signer_type":"pith_registry","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"created_at":"2026-07-04T14:49:30Z","supersedes":[],"prev_event":null,"signature":{"signature_status":"signed_v1","algorithm":"ed25519","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signature_b64":"Notq267gomLhx3CzLIzyUu79cTR6cIFFoukSTrOgi3quO9KvtWUmFKYXXhHinHVNSJu9hgoZAe9quwUAwzVkAw==","signed_message":"open_graph_event_sha256_bytes","signed_at":"2026-07-05T05:13:36.439560Z"},"content_sha256":"0e178dd29a3468d48a3420566438eeaea1359208ce63c4412a5a3751da579e4e","schema_version":"1.0","event_id":"sha256:0e178dd29a3468d48a3420566438eeaea1359208ce63c4412a5a3751da579e4e"},{"event_type":"graph_snapshot","subject_pith_number":"pith:2004:UCBZAD2GVECVTYXFSPUB4XM5IF","target":"graph","payload":{"graph_snapshot":{"paper":{"title":"The effect of low-energy ion-implantation on the electrical transport properties of Si-SiO2 MOSFETs","license":"","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"A. D. Greentree, A. R. Hamilton, D. R. McCamey, J. C. McCallum, M. Francis, R. G. Clark","submitted_at":"2004-11-08T09:08:41Z","abstract_excerpt":"Using silicon MOSFETs with thin (5nm) thermally grown SiO2 gate dielectrics, we characterize the density of electrically active traps at low-temperature after 16keV phosphorus ion-implantation through the oxide. We find that, after rapid thermal annealing at 1000oC for 5 seconds, each implanted P ion contributes an additional 0.08 plus/minus 0.03 electrically active traps, whilst no increase in the number of traps is seen for comparable silicon implants. This result shows that the additional traps are ionized P donors, and not damage due to the implantation process. We also find, using the roo"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"cond-mat/0411185","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/cond-mat/0411185/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"verdict_id":null},"signer":{"signer_id":"pith.science","signer_type":"pith_registry","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"created_at":"2026-07-04T14:49:30Z","supersedes":[],"prev_event":null,"signature":{"signature_status":"signed_v1","algorithm":"ed25519","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signature_b64":"4IPDTYSUkbuYlwT8zO2EhALa3yZcxDh8lmms9zoKngafwr3a+5Q3q+3npVsr+HTkJ+KQC7jNjtEBCUu7wO89Bg==","signed_message":"open_graph_event_sha256_bytes","signed_at":"2026-07-05T05:13:36.439932Z"},"content_sha256":"39e218eca7ad9e06d91c7352b3aae3ca519021651976dc0f342d97745a9769a8","schema_version":"1.0","event_id":"sha256:39e218eca7ad9e06d91c7352b3aae3ca519021651976dc0f342d97745a9769a8"}],"timestamp_proofs":[],"mirror_hints":[{"mirror_type":"https","name":"Pith Resolver","base_url":"https://pith.science","bundle_url":"https://pith.science/pith/UCBZAD2GVECVTYXFSPUB4XM5IF/bundle.json","state_url":"https://pith.science/pith/UCBZAD2GVECVTYXFSPUB4XM5IF/state.json","well_known_bundle_url":"https://pith.science/.well-known/pith/UCBZAD2GVECVTYXFSPUB4XM5IF/bundle.json","status":"primary"}],"public_keys":[{"key_id":"pith-v1-2026-05","algorithm":"ed25519","format":"raw","public_key_b64":"stVStoiQhXFxp4s2pdzPNoqVNBMojDU/fJ2db5S3CbM=","public_key_hex":"b2d552b68890857171a78b36a5dccf368a953413288c353f7c9d9d6f94b709b3","fingerprint_sha256_b32_first128bits":"RVFV5Z2OI2J3ZUO7ERDEBCYNKS","fingerprint_sha256_hex":"8d4b5ee74e4693bcd1df2446408b0d54","rotates_at":null,"url":"https://pith.science/pith-signing-key.json","notes":"Pith uses this Ed25519 key to sign canonical record SHA-256 digests. Verify with: ed25519_verify(public_key, message=canonical_sha256_bytes, signature=base64decode(signature_b64))."}],"merge_version":"pith-open-graph-merge-v1","built_at":"2026-07-05T05:13:36Z","links":{"resolver":"https://pith.science/pith/UCBZAD2GVECVTYXFSPUB4XM5IF","bundle":"https://pith.science/pith/UCBZAD2GVECVTYXFSPUB4XM5IF/bundle.json","state":"https://pith.science/pith/UCBZAD2GVECVTYXFSPUB4XM5IF/state.json","well_known_bundle":"https://pith.science/.well-known/pith/UCBZAD2GVECVTYXFSPUB4XM5IF/bundle.json"},"state":{"state_type":"pith_open_graph_state","state_version":"1.0","pith_number":"pith:2004:UCBZAD2GVECVTYXFSPUB4XM5IF","merge_version":"pith-open-graph-merge-v1","event_count":2,"valid_event_count":2,"invalid_event_count":0,"equivocation_count":0,"current":{"canonical_record":{"metadata":{"abstract_canon_sha256":"6e702007952e2ac7a4777e8e6f973236fab29478877be630172f486ba580bacc","cross_cats_sorted":[],"license":"","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2004-11-08T09:08:41Z","title_canon_sha256":"0cced4f5c20b81350d05364c2f352e9ea9686fff366ece80e53eb71639ad105b"},"schema_version":"1.0","source":{"id":"cond-mat/0411185","kind":"arxiv","version":1}},"source_aliases":[{"alias_kind":"arxiv","alias_value":"cond-mat/0411185","created_at":"2026-07-04T14:49:30Z"},{"alias_kind":"arxiv_version","alias_value":"cond-mat/0411185v1","created_at":"2026-07-04T14:49:30Z"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.cond-mat/0411185","created_at":"2026-07-04T14:49:30Z"},{"alias_kind":"pith_short_12","alias_value":"UCBZAD2GVECV","created_at":"2026-07-04T14:49:30Z"},{"alias_kind":"pith_short_16","alias_value":"UCBZAD2GVECVTYXF","created_at":"2026-07-04T14:49:30Z"},{"alias_kind":"pith_short_8","alias_value":"UCBZAD2G","created_at":"2026-07-04T14:49:30Z"}],"graph_snapshots":[{"event_id":"sha256:39e218eca7ad9e06d91c7352b3aae3ca519021651976dc0f342d97745a9769a8","target":"graph","created_at":"2026-07-04T14:49:30Z","signer":{"key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signer_id":"pith.science","signer_type":"pith_registry"},"payload":{"graph_snapshot":{"author_claims":{"count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","strong_count":0},"builder_version":"pith-number-builder-2026-05-17-v1","claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"integrity":{"available":true,"clean":true,"detectors_run":[],"endpoint":"/pith/cond-mat/0411185/integrity.json","findings":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938","summary":{"advisory":0,"by_detector":{},"critical":0,"informational":0}},"paper":{"abstract_excerpt":"Using silicon MOSFETs with thin (5nm) thermally grown SiO2 gate dielectrics, we characterize the density of electrically active traps at low-temperature after 16keV phosphorus ion-implantation through the oxide. We find that, after rapid thermal annealing at 1000oC for 5 seconds, each implanted P ion contributes an additional 0.08 plus/minus 0.03 electrically active traps, whilst no increase in the number of traps is seen for comparable silicon implants. This result shows that the additional traps are ionized P donors, and not damage due to the implantation process. We also find, using the roo","authors_text":"A. D. Greentree, A. R. Hamilton, D. R. McCamey, J. C. McCallum, M. Francis, R. G. Clark","cross_cats":[],"headline":"","license":"","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2004-11-08T09:08:41Z","title":"The effect of low-energy ion-implantation on the electrical transport properties of Si-SiO2 MOSFETs"},"references":{"count":0,"internal_anchors":0,"resolved_work":0,"sample":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"cond-mat/0411185","kind":"arxiv","version":1},"verdict":{"created_at":null,"id":null,"model_set":{},"one_line_summary":"","pipeline_version":null,"pith_extraction_headline":"","strongest_claim":"","weakest_assumption":""}},"verdict_id":null}}],"author_attestations":[],"timestamp_anchors":[],"storage_attestations":[],"citation_signatures":[],"replication_records":[],"corrections":[],"mirror_hints":[],"record_created":{"event_id":"sha256:0e178dd29a3468d48a3420566438eeaea1359208ce63c4412a5a3751da579e4e","target":"record","created_at":"2026-07-04T14:49:30Z","signer":{"key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signer_id":"pith.science","signer_type":"pith_registry"},"payload":{"attestation_state":"computed","canonical_record":{"metadata":{"abstract_canon_sha256":"6e702007952e2ac7a4777e8e6f973236fab29478877be630172f486ba580bacc","cross_cats_sorted":[],"license":"","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2004-11-08T09:08:41Z","title_canon_sha256":"0cced4f5c20b81350d05364c2f352e9ea9686fff366ece80e53eb71639ad105b"},"schema_version":"1.0","source":{"id":"cond-mat/0411185","kind":"arxiv","version":1}},"canonical_sha256":"a083900f46a90559e2e593e81e5d9d414181e629ada1aef0df8129edcd94b38d","receipt":{"algorithm":"ed25519","builder_version":"pith-number-builder-2026-05-17-v1","canonical_sha256":"a083900f46a90559e2e593e81e5d9d414181e629ada1aef0df8129edcd94b38d","first_computed_at":"2026-07-04T14:49:30.843585Z","key_id":"pith-v1-2026-05","kind":"pith_receipt","last_reissued_at":"2026-07-04T14:49:30.843585Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","receipt_version":"0.3","signature_b64":"oPWnHR+WILXkgFC6Bv1uMo1ZfREZcUBEaR55/GqcIp2VS6CZtgVy9OfUjAowaHbus6lrwKuMzSYviw+uWZVKCA==","signature_status":"signed_v1","signed_at":"2026-07-04T14:49:30.843960Z","signed_message":"canonical_sha256_bytes"},"source_id":"cond-mat/0411185","source_kind":"arxiv","source_version":1}}},"equivocations":[],"invalid_events":[],"applied_event_ids":["sha256:0e178dd29a3468d48a3420566438eeaea1359208ce63c4412a5a3751da579e4e","sha256:39e218eca7ad9e06d91c7352b3aae3ca519021651976dc0f342d97745a9769a8"],"state_sha256":"a4b0ec94e0c1f43bdcb1045f1c849796d021850ee73a217e714674dee20f71f3"},"bundle_signature":{"signature_status":"signed_v1","algorithm":"ed25519","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signature_b64":"m/yo6+oV24HBXhrBHVN+B5+XSNFK02FFee0v0OpbBL4nK2eIj3Cy31xERsYvq9LhPhMVPrlBNz/rkcrRLkPwBw==","signed_message":"bundle_sha256_bytes","signed_at":"2026-07-05T05:13:36.441894Z","bundle_sha256":"1a42eecd4dc9c0cc939d93f132df6f7700c7597513d154473d203df2fcf512ac"}}