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Furthermore, electrical capacitance-voltage (C-V) measurements of real-world devices do not yield this clamped baseline; instead, they capture an effective permittiv","authors_text":"Ilan Shalish","cross_cats":[],"headline":"The high dielectric constant measured in ScAlN arises from electromechanical inflation, in which internal electric fields drive lattice strain through the inverse piezoelectric effect.","license":"http://creativecommons.org/licenses/by/4.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2026-05-05T13:54:08Z","title":"The high K anomaly in ScAlN explained"},"references":{"count":0,"internal_anchors":0,"resolved_work":0,"sample":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"2605.03765","kind":"arxiv","version":2},"verdict":{"created_at":"2026-05-07T15:39:30.367431Z","id":"af4674ab-f385-445f-a536-e5c9c2cfca90","model_set":{"reader":"grok-4.3"},"one_line_summary":"The high-K anomaly in ScAlN is explained by electromechanical inflation, with effective permittivity given by epsilon_eff = epsilon_33^S + e_33^2 / C_33 under stress-free boundary conditions.","pipeline_version":"pith-pipeline@v0.9.0","pith_extraction_headline":"The high dielectric constant measured in ScAlN arises from electromechanical inflation, in which internal electric fields drive lattice strain through the inverse piezoelectric effect.","strongest_claim":"We demonstrate that this 'high K' behavior is a manifestation of electromechanical inflation, where the enormous internal electric fields of polar heterostructures induce macroscopic lattice strain via the inverse piezoelectric effect. 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