{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2013:VGIGIH6ZTELGHTVKK4CHMMWLYX","short_pith_number":"pith:VGIGIH6Z","schema_version":"1.0","canonical_sha256":"a990641fd9991663ceaa57047632cbc5cc4172cece0b79386475524d7debfcfe","source":{"kind":"arxiv","id":"1310.1870","version":1},"attestation_state":"computed","paper":{"title":"Prospects of Direct Growth Boron Nitride Films as Substrates for Graphene Electronics","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Andrey A. Voevodin, David W. Snyder, Gregory Pastir, Jamie J. Gengler, Joshua A. Robinson, Ke Wang, Matthew J. Hollander, Maxwell Wetherington, Michael S. Bresnehan, Takahira Miyagi, William C. Mitchel","submitted_at":"2013-10-07T17:36:54Z","abstract_excerpt":"We present a route for direct growth of boron nitride via a polyborazylene to h-BN conversion process. This two-step growth process ultimately leads to a >25x reduction in the RMS surface roughness of h-BN films when compared to a high temperature growth on Al2O3(0001) and Si(111) substrates. Additionally, the stoichiometry is shown to be highly dependent on the initial polyborazylene deposition temperature. Importantly, CVD graphene transferred to direct-grown boron nitride films on Al2O3 at 400{\\deg}C results in a >1.5x and >2.5x improvement in mobility compared to CVD graphene transferred t"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1310.1870","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2013-10-07T17:36:54Z","cross_cats_sorted":[],"title_canon_sha256":"6b8eec1728d106e08044d442969eadc260d00205d619975e40c1b0b87e54d779","abstract_canon_sha256":"cd9f2ade307179af3eb7707f41f5ce586536b6eb67b1e62ce307724ce0d44007"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-18T00:45:50.548296Z","signature_b64":"Ys5SDp/T17/LyOVZZlXZIYUR3Pj7YOA4etECBCAwLXFjudjV5VFfq4Usn+UKOEapKWtsDuuFtxx9Qm/xAPljAw==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"a990641fd9991663ceaa57047632cbc5cc4172cece0b79386475524d7debfcfe","last_reissued_at":"2026-05-18T00:45:50.547696Z","signature_status":"signed_v1","first_computed_at":"2026-05-18T00:45:50.547696Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Prospects of Direct Growth Boron Nitride Films as Substrates for Graphene Electronics","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Andrey A. Voevodin, David W. Snyder, Gregory Pastir, Jamie J. Gengler, Joshua A. Robinson, Ke Wang, Matthew J. Hollander, Maxwell Wetherington, Michael S. Bresnehan, Takahira Miyagi, William C. Mitchel","submitted_at":"2013-10-07T17:36:54Z","abstract_excerpt":"We present a route for direct growth of boron nitride via a polyborazylene to h-BN conversion process. This two-step growth process ultimately leads to a >25x reduction in the RMS surface roughness of h-BN films when compared to a high temperature growth on Al2O3(0001) and Si(111) substrates. Additionally, the stoichiometry is shown to be highly dependent on the initial polyborazylene deposition temperature. Importantly, CVD graphene transferred to direct-grown boron nitride films on Al2O3 at 400{\\deg}C results in a >1.5x and >2.5x improvement in mobility compared to CVD graphene transferred t"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1310.1870","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"1310.1870","created_at":"2026-05-18T00:45:50.547775+00:00"},{"alias_kind":"arxiv_version","alias_value":"1310.1870v1","created_at":"2026-05-18T00:45:50.547775+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1310.1870","created_at":"2026-05-18T00:45:50.547775+00:00"},{"alias_kind":"pith_short_12","alias_value":"VGIGIH6ZTELG","created_at":"2026-05-18T12:28:04.890932+00:00"},{"alias_kind":"pith_short_16","alias_value":"VGIGIH6ZTELGHTVK","created_at":"2026-05-18T12:28:04.890932+00:00"},{"alias_kind":"pith_short_8","alias_value":"VGIGIH6Z","created_at":"2026-05-18T12:28:04.890932+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/VGIGIH6ZTELGHTVKK4CHMMWLYX","json":"https://pith.science/pith/VGIGIH6ZTELGHTVKK4CHMMWLYX.json","graph_json":"https://pith.science/api/pith-number/VGIGIH6ZTELGHTVKK4CHMMWLYX/graph.json","events_json":"https://pith.science/api/pith-number/VGIGIH6ZTELGHTVKK4CHMMWLYX/events.json","paper":"https://pith.science/paper/VGIGIH6Z"},"agent_actions":{"view_html":"https://pith.science/pith/VGIGIH6ZTELGHTVKK4CHMMWLYX","download_json":"https://pith.science/pith/VGIGIH6ZTELGHTVKK4CHMMWLYX.json","view_paper":"https://pith.science/paper/VGIGIH6Z","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=1310.1870&json=true","fetch_graph":"https://pith.science/api/pith-number/VGIGIH6ZTELGHTVKK4CHMMWLYX/graph.json","fetch_events":"https://pith.science/api/pith-number/VGIGIH6ZTELGHTVKK4CHMMWLYX/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/VGIGIH6ZTELGHTVKK4CHMMWLYX/action/timestamp_anchor","attest_storage":"https://pith.science/pith/VGIGIH6ZTELGHTVKK4CHMMWLYX/action/storage_attestation","attest_author":"https://pith.science/pith/VGIGIH6ZTELGHTVKK4CHMMWLYX/action/author_attestation","sign_citation":"https://pith.science/pith/VGIGIH6ZTELGHTVKK4CHMMWLYX/action/citation_signature","submit_replication":"https://pith.science/pith/VGIGIH6ZTELGHTVKK4CHMMWLYX/action/replication_record"}},"created_at":"2026-05-18T00:45:50.547775+00:00","updated_at":"2026-05-18T00:45:50.547775+00:00"}