{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2020:WUOESL6GIDFIWJSZ24JPCABMI2","short_pith_number":"pith:WUOESL6G","schema_version":"1.0","canonical_sha256":"b51c492fc640ca8b2659d712f1002c46a4c69cdfa7a4c943c1b62b51766f1e37","source":{"kind":"arxiv","id":"2010.00362","version":1},"attestation_state":"computed","paper":{"title":"SnO/$\\beta$-Ga2O3 vertical $pn$ heterojunction diodes","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.other"],"primary_cat":"physics.app-ph","authors_text":"Abbes Tahraoui, Daniel Splith, Holger von Wenckstern, Johannes Feldl, Manfred Ramsteiner, Marius Grundmann, Melanie Budde, Oliver Bierwagen, Piero Mazzolini","submitted_at":"2020-10-01T12:47:26Z","abstract_excerpt":"Vertical $pn$ heterojunction diodes were prepared by plasma-assisted molecular beam epitaxy of unintentionally-doped $p$-type SnO layers with hole concentrations ranging from $p=10^{18}$ to $10^{19}$cm$^{-3}$ on unintentionally-doped $n$-type $\\beta$-Ga$_{2}$O$_{3}$(-201) substrates with an electron concentration of $n=2.0\\times10^{17}$cm$^{-3}$. The SnO layers consist of (001)-oriented grains without in-plane expitaxial relation to the substrate. After subsequent contact processing and mesa etching (which drastically reduced the reverse current spreading in the SnO layer and associated high l"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"2010.00362","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"physics.app-ph","submitted_at":"2020-10-01T12:47:26Z","cross_cats_sorted":["cond-mat.other"],"title_canon_sha256":"471e50cd7dc7c4256f3e12ad38c2a6b9bd242dc41be642781be07e5e55c40920","abstract_canon_sha256":"a29170fe1350a33d53c3d1cdc8a430853c7df3284e167df7620f055399982e3d"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-07-05T02:01:15.110729Z","signature_b64":"W6AxP1rToKenejfahjxep/72wRHfn305mFFUNy7xMEW/VCyR8W4Rk02GdkI/q1ZjgbXlqmbYEGwjLoRvwbovCw==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"b51c492fc640ca8b2659d712f1002c46a4c69cdfa7a4c943c1b62b51766f1e37","last_reissued_at":"2026-07-05T02:01:15.110337Z","signature_status":"signed_v1","first_computed_at":"2026-07-05T02:01:15.110337Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"SnO/$\\beta$-Ga2O3 vertical $pn$ heterojunction diodes","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.other"],"primary_cat":"physics.app-ph","authors_text":"Abbes Tahraoui, Daniel Splith, Holger von Wenckstern, Johannes Feldl, Manfred Ramsteiner, Marius Grundmann, Melanie Budde, Oliver Bierwagen, Piero Mazzolini","submitted_at":"2020-10-01T12:47:26Z","abstract_excerpt":"Vertical $pn$ heterojunction diodes were prepared by plasma-assisted molecular beam epitaxy of unintentionally-doped $p$-type SnO layers with hole concentrations ranging from $p=10^{18}$ to $10^{19}$cm$^{-3}$ on unintentionally-doped $n$-type $\\beta$-Ga$_{2}$O$_{3}$(-201) substrates with an electron concentration of $n=2.0\\times10^{17}$cm$^{-3}$. The SnO layers consist of (001)-oriented grains without in-plane expitaxial relation to the substrate. After subsequent contact processing and mesa etching (which drastically reduced the reverse current spreading in the SnO layer and associated high l"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"2010.00362","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/2010.00362/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"2010.00362","created_at":"2026-07-05T02:01:15.110385+00:00"},{"alias_kind":"arxiv_version","alias_value":"2010.00362v1","created_at":"2026-07-05T02:01:15.110385+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.2010.00362","created_at":"2026-07-05T02:01:15.110385+00:00"},{"alias_kind":"pith_short_12","alias_value":"WUOESL6GIDFI","created_at":"2026-07-05T02:01:15.110385+00:00"},{"alias_kind":"pith_short_16","alias_value":"WUOESL6GIDFIWJSZ","created_at":"2026-07-05T02:01:15.110385+00:00"},{"alias_kind":"pith_short_8","alias_value":"WUOESL6G","created_at":"2026-07-05T02:01:15.110385+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/WUOESL6GIDFIWJSZ24JPCABMI2","json":"https://pith.science/pith/WUOESL6GIDFIWJSZ24JPCABMI2.json","graph_json":"https://pith.science/api/pith-number/WUOESL6GIDFIWJSZ24JPCABMI2/graph.json","events_json":"https://pith.science/api/pith-number/WUOESL6GIDFIWJSZ24JPCABMI2/events.json","paper":"https://pith.science/paper/WUOESL6G"},"agent_actions":{"view_html":"https://pith.science/pith/WUOESL6GIDFIWJSZ24JPCABMI2","download_json":"https://pith.science/pith/WUOESL6GIDFIWJSZ24JPCABMI2.json","view_paper":"https://pith.science/paper/WUOESL6G","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=2010.00362&json=true","fetch_graph":"https://pith.science/api/pith-number/WUOESL6GIDFIWJSZ24JPCABMI2/graph.json","fetch_events":"https://pith.science/api/pith-number/WUOESL6GIDFIWJSZ24JPCABMI2/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/WUOESL6GIDFIWJSZ24JPCABMI2/action/timestamp_anchor","attest_storage":"https://pith.science/pith/WUOESL6GIDFIWJSZ24JPCABMI2/action/storage_attestation","attest_author":"https://pith.science/pith/WUOESL6GIDFIWJSZ24JPCABMI2/action/author_attestation","sign_citation":"https://pith.science/pith/WUOESL6GIDFIWJSZ24JPCABMI2/action/citation_signature","submit_replication":"https://pith.science/pith/WUOESL6GIDFIWJSZ24JPCABMI2/action/replication_record"}},"created_at":"2026-07-05T02:01:15.110385+00:00","updated_at":"2026-07-05T02:01:15.110385+00:00"}