Variable-temperature STM/STS on EuSn2As2 reveals two gaps below TN=24K: a 100 meV gap near EF from AFM zone folding and a 50 meV gap at the Dirac point linked to vacancy-induced mirror-symmetry breaking.
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Imaging the Magnetically Driven Reconstruction of the Electronic States in the Antiferromagnetic Topological Insulator EuSn$_2$As$_2$
Variable-temperature STM/STS on EuSn2As2 reveals two gaps below TN=24K: a 100 meV gap near EF from AFM zone folding and a 50 meV gap at the Dirac point linked to vacancy-induced mirror-symmetry breaking.