In hBN-encapsulated graphene nanoribbons, a perpendicular magnetic field induces a fully insulating state whose gap grows linearly at 3-4 meV/T, up to 30 meV at 9 T.
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Insulating state in low-disorder graphene nanoribbons
In hBN-encapsulated graphene nanoribbons, a perpendicular magnetic field induces a fully insulating state whose gap grows linearly at 3-4 meV/T, up to 30 meV at 9 T.