Proton irradiation reduces the gain and rectification of 4H-SiC LGADs through gain-layer compensation and defect-limited impact ionization, yet the devices remain operational at fluences up to 3.33e14 p/cm2.
Baliga,Fundamentals of Power Semiconductor Devices, Springer (Sept., 2018)
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Impact of Proton Irradiation on 4H-SiC Low Gain Avalanche Detectors (LGADs)
Proton irradiation reduces the gain and rectification of 4H-SiC LGADs through gain-layer compensation and defect-limited impact ionization, yet the devices remain operational at fluences up to 3.33e14 p/cm2.