First-principles calculations predict that zincblende TiSn is dynamically stable and a direct narrow-gap semiconductor with a GGA-PBE band gap of 0.3 eV.
Castellanos-Gomez, Black phosphorus: narrow gap, wide applica- tions, The journal of physical chemistry letters 6 (21) (2015) 4280–4291
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First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor
First-principles calculations predict that zincblende TiSn is dynamically stable and a direct narrow-gap semiconductor with a GGA-PBE band gap of 0.3 eV.