REVIEW
Strength of the dominant scatterer in graphene on silicon oxide
Not yet reviewed by Pith; the record is open.
This paper has not been read by Pith yet. Machine review is queued; the pith claim, tier, and objections will appear here once it completes.
SPECIMEN: schema-true, not a live event
T0 review · schema-true
One-sentence machine reading of the paper's core claim.
pith:XXXXXXXX · record.json · timestamp
classification
cond-mat.mes-hall
keywords
scattererstrengthdominantgraphenegraphene-basedimpuritiesoxidesilicon
Signed reviews
read the original abstract
A large variability of carrier mobility of graphene-based field effect transistors hampers graphene science and technology. We determine the scattering strength of the dominant scatterer responsible for the variability of graphene-based transistors on silicon oxide. The strength of the scatterer is found to be more consistent with charged impurities than with resonant impurities.
Discussion (0). Continue with ORCID to comment.