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REVIEW 3 major objections 5 minor 42 references

Electric field tunable spin-orbit gap in a bilayer graphene/WSe$_{2}$ quantum dot

T0 review · 3 major / 5 minor · reviewed 2026-08-16 · deepseek-v4-flash

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Pith's one-line read In a bilayer graphene quantum dot next to WSe2, the proximity-induced spin-orbit gap shrinks as the vertical electric field is raised.

desk verdict A careful, honest independent measurement of tunable SOC in a BLG/WSe2 quantum dot, but the central effect is already in a paper they cite; still worth refereeing. read the letter →

arxiv 2504.12252 v2 pith:GEWDG7U7 submitted 2025-04-16 cond-mat.mes-hall quant-ph

Hubert Dulisch , David Emmerich , Eike Icking , Katrin Hecker , Samuel Möller , Leonie Müller , Kenji Watanabe , Takashi Taniguchi
show 2 more authors
Christian Volk Christoph Stampfer
This is my paper · ORCID
classification cond-mat.mes-hallquant-ph
keywords bilayergraphenetungstendiselenidespin-orbitcouplingquantumdotdisplacementfieldproximityeffectvalleyg-factormagnetotransport
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

This paper reports that the spin-orbit gap in a gate-defined hole quantum dot in bilayer graphene can be tuned by an out-of-plane electric displacement field. The dot is placed next to a WSe$_2$ layer, which proximity-induces a spin-orbit coupling well above the intrinsic value in pristine bilayer graphene. Magnetotransport and finite-bias spectroscopy show that $\Delta_\mathrm{SO}$ is largest at low displacement field and decreases as the field grows, while the spin g-factor stays near 2.2 and the valley g-factor falls. This demonstrates gate-voltage control of spin-orbit coupling in a graphene quantum dot, relevant for spintronics and spin-qubit control.

What carries the argument

The central machinery is magnetic-field spectroscopy of the first Coulomb peak. The paper uses two identities: the out-of-plane Zeeman shift $\Delta\mu = \frac{1}{2}(g_s+g_v)\mu_\mathrm{B}B_\perp$, which fixes the sum of spin and valley g-factors, and the in-plane shift $\Delta\mu = \frac{1}{2}\sqrt{\Delta_\mathrm{SO}^2 + (g_s\mu_\mathrm{B}B_\parallel)^2}$, whose low-field curvature and high-field slope separate the spin-orbit gap $\Delta_\mathrm{SO}$ from $g_s$. The physical mechanism that makes $\Delta_\mathrm{SO}$ tunable is the combination of layer polarization and lateral confinement: at larger displacement fields the dot wavefunction localizes more strongly on the graphene layer away from WSe$_2$ and spreads less in momentum space, so fewer Bloch states sample the proximitized layer. The non-closing third Coulomb diamond independently signals the spin-valley flavor imbalance produced by the induced SOC.

What would settle it

Measure $\Delta_\mathrm{SO}$ and $g_s$ at each displacement field without fixing $g_s$ — for example by fitting the in-plane and out-of-plane shifts jointly with both parameters free, and by calibrating the lever arm with an independent method such as bias-spectroscopy triangles or a second dot's charging energy. If the decreasing-$\Delta_\mathrm{SO}$ trend disappears or changes sign once $g_s(D)$ is allowed to vary, the central claim is not supported.

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Extended reading notes

Core claim

The paper claims that the spin-orbit gap $\Delta_\mathrm{SO}$ — the energy separation between spin-valley flavors in the quantum dot — is not a fixed material parameter but depends on the displacement field, increasing toward low fields. The quantitative extraction comes from tracking the first Coulomb peak as a function of magnetic field, using $\Delta\mu = \frac{1}{2}(g_s+g_v)\mu_\mathrm{B} B_\perp$ for out-of-plane fields and $\Delta\mu = \frac{1}{2}\sqrt{\Delta_\mathrm{SO}^2+(g_s\mu_\mathrm{B} B_\parallel)^2}$ for in-plane fields. With $g_s$ fixed to the measured average of 2.2, the fits give a $\Delta_\mathrm{SO}$ that is significantly larger than in pristine bilayer-graphene quantum dots and decreases with increasing $|D/\epsilon_0|$. The valley g-factor $g_v$ also decreases with increasing field, which the paper interprets as a widening of the dot. Because the dot wavefunction mainly lives on the graphene layer opposite the WSe$_2$, the sizable proximity-induced SOC is attributed to momentum-space mixing of Bloch states: lateral confinement pulls in states away from the $K$ and $K'$ points, where layer polarization is incomplete, so the wavefunction gains weight on the proximitized layer.

Load-bearing premise

The shrinking of $\Delta_\mathrm{SO}$ with displacement field is extracted by fixing the spin g-factor at the sample-averaged value $g_s = 2.2$ and converting gate voltage to energy with a lever arm that carries about 10 percent systematic uncertainty; if $g_s$ actually moves with the displacement field, the apparent trend in the spin-orbit gap could be an artifact of the fit.

Editorial extensions

If this is right

  • At low displacement field the dot's spin-orbit gap is substantially larger than in pristine bilayer-graphene dots, so WSe$_2$ proximity doping is detectable even though the dot wavefunction sits mostly on the opposite graphene layer.
  • Raising the displacement field reduces $\Delta_\mathrm{SO}$ without moving the spin g-factor, so the same electrostatic gate that opens the band gap can also tune the spin splitting.
  • The concurrent drop of the valley g-factor independently indicates that the dot widens at larger displacement fields, providing a second, gate-tunable geometric handle on the dot.
  • Because the spin-orbit gap can be changed with a gate voltage rather than a magnetic field, the device offers a path toward fast electrical control of spin qubits in bilayer graphene.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • Editorial inference: the momentum-space mixing mechanism predicts a quantitative relation between dot size and $\Delta_\mathrm{SO}$; comparing dots of different finger-gate widths at fixed field would test whether smaller dots, with broader momentum distributions, show a larger spin-orbit gap at the same displacement field.
  • Editorial inference: if $\Delta_\mathrm{SO}$ is electrically tunable, the same sample should show field-dependent spin relaxation or spin-blockade leakage; measuring those dynamical quantities would convert the static level splitting into a usable qubit-control parameter.
  • Editorial inference: the mechanism implies an optimum operating point for spin qubits — large enough $\Delta_\mathrm{SO}$ to split the states, but small enough gate voltage to keep the dot strongly confined — which could be engineered by choosing the WSe$_2$ placement or the dot geometry.
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Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

3 major / 5 minor

Summary. The manuscript reports magnetotransport and finite-bias spectroscopy of a gate-defined hole quantum dot in a bilayer graphene/WSe2 heterostructure. From the magnetic-field dependence of the first Coulomb resonance (Eqs. (1) and (2)) the authors extract the spin g-factor, valley g-factor, and spin-orbit gap, finding that the spin-orbit gap is enhanced relative to pristine bilayer graphene quantum dots and decreases with increasing displacement field, while the valley g-factor also decreases and the spin g-factor remains approximately constant. The decrease is attributed to stronger layer localization and weaker lateral confinement at higher displacement fields, and the results are compared with a concurrent independent experiment. The paper claims electrostatic tunability of proximity-induced spin-orbit coupling in this system.

Significance. If the central claim holds, the work demonstrates a practically important capability: electrical control of the spin-orbit gap in a bilayer graphene/WSe2 quantum dot without changing magnetic fields. The paper has genuine strengths: two independent extraction methods (in-plane magnetotransport and finite-bias excited-state spectroscopy) agree; the observed band-inversion feature near zero displacement field provides an additional qualitative signature of enhanced spin-orbit coupling; and comparison with pure bilayer graphene dots isolates the proximity effect. The agreement with the concurrently reported experiment is also supportive. The main caveats concern the sensitivity of the extracted spin-orbit gap to the assumed constant spin g-factor and to the gate-lever-arm calibration, both of which are shared by the two methods.

major comments (3)
  1. [Section III, Eq. (2), Fig. 5(a)] The D-dependence of the spin-orbit gap is extracted by fixing g_s to the sample-averaged value 2.2±0.2. This is a load-bearing assumption because the low-field curvature of the in-plane shift is degenerate with the assumed g_s: for fixed curvature, Delta_SO scales approximately as g_s^2. If the true g_s varied across the reported range, e.g. from 2.0 at low |D| to 2.4 at high |D|, the extracted Delta_SO would decrease by roughly 30% even if the true spin-orbit gap were D-independent. The scatter in Fig. 5(a) (±0.2) is therefore comparable to a substantial fraction of the reported Delta_SO variation. The authors should demonstrate robustness by refitting with g_s fixed at its lower and upper bounds (2.0 and 2.4) or by fitting g_s and Delta_SO simultaneously from the full B-parallel traces, and should report whether the decreasing trend survives.
  2. [Section III, lever-arm calibration] The conversion Delta_mu = alpha Delta_V_FG carries an estimated ~10% systematic uncertainty, and the same alpha is used in both the magnetotransport and finite-bias extractions. Because the paper itself argues that the quantum dot becomes larger at higher displacement fields (in connection with the decreasing valley g-factor), the lever arm alpha may drift with D. A D-dependent alpha would bias both extraction methods in the same direction, so the agreement between them does not eliminate this systematic. The authors should report the alpha value extracted at each displacement field, or otherwise bound alpha(D), and quantify how much of the Delta_SO(D) slope could be absorbed by an alpha drift within the stated uncertainty.
  3. [Section II, finite-bias spectroscopy] The finite-bias extraction assumes that 'the first excited state' observed in the Coulomb diamond coincides with the spin-orbit gap. This is an assumption stated in the text, not a demonstrated fact. Since the orbital splitting is reported as ~500 micro-eV, the identification is plausible only if the spin-orbit gap is the lowest excitation at zero field at every D. The authors should justify the identification more explicitly, for example by showing that the finite-bias excitation energy follows the magnetotransport Delta_SO values with comparable error bars for all reported D, and should discuss whether a D-dependent reordering of orbital and spin-orbit excitations could affect the comparison.
minor comments (5)
  1. [Data availability] The data availability statement lists a Zenodo repository with 'DOI XXX'; this placeholder must be replaced with the actual DOI before publication.
  2. [Fig. 5(c)] The figure legend is not fully described in the text: the white triangles are mentioned as finite-bias values, but the white circles and grey points should be explicitly identified in the caption or text, with error bars defined.
  3. [Section IV] The statement that the quantum dot wavefunction 'predominantly derives from bottom-layer states' is central to the interpretation but is asserted without deriving it from the gate geometry or band parameters; a short justification or reference would help.
  4. [Fig. 2(c,d)] The description of the white dashed line as indicating the first excited state and 'its intercept with the outline of the conductive region' should specify how the intercept is converted to an energy and whether the same lever arm alpha is used as in the magnetotransport analysis.
  5. [Reference [41]] Reference [41] is incomplete ('arXiv 2025' without an arXiv number); it should be completed for reproducibility.

Circularity Check

0 steps flagged · score 0.0 of 10

No significant circularity: the spin-orbit gap and g-factors are measured quantities extracted with standard fits and checked against independent finite-bias data and an external experiment.

full rationale

The paper is an experimental magnetotransport and finite-bias spectroscopy study, not a derivation that converts inputs into predictions. The central quantities Delta_SO, g_s, and g_v are extracted by fitting the standard Zeeman-shift relations, Eq. (1) for B_perp and Eq. (2) for B_parallel, to measured Coulomb-peak positions, with the lever arm alpha calibrated from finite-bias diamonds. These parameters are not defined in terms of the paper's conclusion: the D-dependence of Delta_SO is not imposed by the fitting procedure, because g_s is fixed to the sample-averaged value 2.2 +/- 0.2 and Delta_SO is obtained from the low-field curvature while g_s is taken from the high-field linear regime. The finite-bias spectroscopy extraction, which the paper explicitly notes assumes the first excited state to coincide with the SO gap (Section II), is an independent cross-check that agrees with the magnetotransport values. The comparison with pure-BLG QDs uses previously published data, Refs. [6] and [40], as external benchmarks rather than as inputs that force the fitted Delta_SO values; these self-citations are not load-bearing in the extraction. The concluding agreement with Ref. [41], an independent experiment, further supports the finding. The acknowledged systematic uncertainties, including the ~10% lever-arm uncertainty and the assumption of a D-independent g_s, affect the accuracy of the extracted values but do not make the result circular: no fitted quantity is renamed as a prediction, and no conclusion is equivalent by construction to its inputs. The tight-binding model of Fig. 1(c) is based on an independent published model, Ref. [3], with an added proximity parameter, and is used illustratively to interpret the band-inversion feature rather than to generate the measured Delta_SO values. Overall, the central claim is self-contained as an experimental measurement with independent cross-checks.

Assumptions & free parameters 4 free parameters · 4 assumptions · 0 invented entities

The central numbers come from fitting energy shifts with a standard spin-valley model for BLG quantum dots; no new physical entities are invented. The main burdens are the assumed equality of the first excited state with the spin-orbit gap and the fixed g_s during fitting.

free parameters (4)
  • Spin g-factor g_s = 2.2 ± 0.2 (averaged over displacement fields)
    Extracted from high-field in-plane magnetotransport, then fixed when fitting g_v and Δ_SO. Its uncertainty contributes a systematic error of about 10 percent.
  • Valley g-factor g_v per displacement field = Reported in Fig. 5(b); decreases with increasing |D/ε0|
    Obtained from out-of-plane field slopes using Eq. (1) after fixing g_s. The decreasing trend is one of the paper's central observations.
  • Spin-orbit gap Δ_SO per displacement field = Reported in Fig. 5(c); decreases with increasing |D/ε0|
    Obtained from in-plane magnetotransport fits to Eq. (2) and cross-checked with the first excited state from finite-bias spectroscopy.
  • Gate lever arm α = Not tabulated; derived from Coulomb diamond edges
    Used to convert gate-voltage shifts into energy; author-estimated systematic uncertainty about 10 percent.
assumptions (4)
  • domain assumption Spin-valley level shifts in the QD follow Eq. (1) for B⊥ and Eq. (2) for B∥
    The basic model for extracting g_v and Δ_SO. Interaction effects or orbital contributions would bias the extracted parameters.
  • ad hoc to paper The first excited state seen in finite-bias spectroscopy is the spin-orbit gap
    Explicit in Section II; used for the finite-bias Δ_SO estimates, with agreement with the magnetic-field method cited as support.
  • domain assumption The QD is predominantly localized on the BLG layer opposite to the WSe2 because of band polarization at high displacement field
    Used to argue that the proximity SOC acts through momentum-space mixing; no direct layer-resolved measurement is provided.
  • domain assumption Tight-binding band structure parameters from Ref. [3] plus the λ_Δ addition on layer 1 describe the device band inversion
    Used for the qualitative band-inversion picture in Fig. 1(c); not required for the main Δ_SO extraction.

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Cite this review

Pith. "Pith review of Electric field tunable spin-orbit gap in a bilayer graphene/WSe$_{2}$ quantum dot." pith.science (2026). https://pith.science/paper/GEWDG7U7

@misc{pith2026250412252,
  author       = {Pith},
  title        = {Pith review of: Electric field tunable spin-orbit gap in a bilayer graphene/WSe$_2$ quantum dot},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/GEWDG7U7}},
  note         = {Machine review of arXiv:2504.12252}
}
abstract

We report on the investigation of proximity-induced spin-orbit coupling (SOC) in a heterostructure of bilayer graphene (BLG) and tungsten diselenide (WSe$_2$). A BLG quantum dot (QD) in the few-particle regime acts as a sensitive probe for induced SOC. Finite bias and magnetotransport spectroscopy measurements reveal a significantly enhanced SOC that decreases with the applied displacement field, distinguishing it from pristine BLG. Furthermore, our measurements demonstrate a reduced valley $g$-factor at larger displacement fields, consistent with a weaker lateral confinement of the QD. Our findings show evidence of the influence of WSe$_2$ across BLG layers, driven by reduced real-space confinement and increased layer localization of the QD states on the BLG layer distant to the WSe$_2$ at higher displacement fields. This study demonstrates the electrostatic tunability of the spin-orbit gap in BLG/WSe$_2$ heterostructures, which is especially relevant for the field of spintronics and future spin qubit control in BLG QDs.

Figures

Figures reproduced from arXiv: 2504.12252 by the authors.

Figure 1
Figure 1. FIG. 1. (a) Schematic of the device showing the relevant [PITH_FULL_IMAGE:figures/full_fig_p002_1.png] view at source ↗
Figure 3
Figure 3. FIG. 3. (a) Finite-bias spectroscopy of the first 4 holes in the [PITH_FULL_IMAGE:figures/full_fig_p003_3.png] view at source ↗
Figure 4
Figure 4. FIG. 4. (a) Schematic of the single particle energy levels [PITH_FULL_IMAGE:figures/full_fig_p004_4.png] view at source ↗
Figures from the paper (1 more)
Figure 5
Figure 5. Figure 5: (b), narrowing the distribution of the wave function in momentum space around layer-polarized states. The two effects contributes to the observed decrease of ∆SO with increasing |D/ε0|. V. CONCLUSION In summary, we have experimentally investigated the proximity-induced…

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Works this paper leans on

42 extracted references · 41 canonical work pages

  1. [41]

    Gerber, J. D. et al. Tunable spin-orbit splitting in bilayer graphene/WSe2 quantum devices.arXiv2025,

    work page

  2. [1]

    C.; Trickey, S

    Boettger, J. C.; Trickey, S. B. First-principles calcula- tion of the spin-orbit splitting in graphene.Phys. Rev. B 2007,75, 121402

    work page 2007

  3. [2]

    Band-structure topologies of graphene: Spin-orbit coupling effects from first princi- ples.Phys

    Gmitra, M.; Konschuh, S.; Ertler, C.; Ambrosch- Draxl, C.; Fabian, J. Band-structure topologies of graphene: Spin-orbit coupling effects from first princi- ples.Phys. Rev. B2009,80, 235431

    work page

  4. [3]

    Theory of spin-orbit coupling in bilayer graphene.Phys

    Konschuh, S.; Gmitra, M.; Kochan, D.; Fabian, J. Theory of spin-orbit coupling in bilayer graphene.Phys. Rev. B 2012,85, 115423

    work page 2012

  5. [4]

    J.; Bosn- jak, B.; Tiemann, L.; Blick, R

    Sichau, J.; Prada, M.; Anlauf, T.; Lyon, T. J.; Bosn- jak, B.; Tiemann, L.; Blick, R. H. Resonance Microwave Measurements of an Intrinsic Spin-Orbit Coupling Gap in Graphene: A Possible Indication of a Topological State. Phys. Rev. Lett.2019,122, 046403

    work page 2019

  6. [5]

    Observation of the Spin-Orbit Gap in Bi- layer Graphene by One-Dimensional Ballistic Transport

    Banszerus, L.; Frohn, B.; Fabian, T.; Somanchi, S.; Epping, A.; M¨ uller, M.; Neumaier, D.; Watanabe, K.; Taniguchi, T.; Libisch, F.; Beschoten, B.; Hassler, F.; Stampfer, C. Observation of the Spin-Orbit Gap in Bi- layer Graphene by One-Dimensional Ballistic Transport. Phys. Rev. Lett.2020,124, 177701

    work page 2020

  7. [6]

    Spin-valley coupling in single- electron bilayer graphene quantum dots.Nat

    Banszerus, L.; M¨ oller, S.; Steiner, C.; Icking, E.; Trel- lenkamp, S.; Lentz, F.; Watanabe, K.; Taniguchi, T.; Volk, C.; Stampfer, C. Spin-valley coupling in single- electron bilayer graphene quantum dots.Nat. Commun. 2021,12, 5250

    work page 2021

  8. [7]

    K.; Watanabe, K.; Taniguchi, T.; Fal’ko, V.; Meir, Y.; Ihn, T.; Ensslin, K

    Kurzmann, A.; Kleeorin, Y.; Tong, C.; Garreis, R.; Knothe, A.; Eich, M.; Mittag, C.; Gold, C.; de Vries, F. K.; Watanabe, K.; Taniguchi, T.; Fal’ko, V.; Meir, Y.; Ihn, T.; Ensslin, K. Kondo effect and spin–orbit coupling in graphene quantum dots.Nat. Commun. 2021,12, 6004

    work page 2021

Show all 42 references
  1. [8]

    J.; Adam, C.; Tong, C.; Garreis, R.; Gerber, J

    Duprez, H.; Cances, S.; Omahen, A.; Masseroni, M.; Ruckriegel, M. J.; Adam, C.; Tong, C.; Garreis, R.; Gerber, J. D.; Huang, W.; G¨ achter, L.; Watanabe, K.; Taniguchi, T.; Ihn, T.; Ensslin, K. Spin-valley locked excited states spectroscopy in a one-particle bilayer graphene q...

    2024

  2. [9]

    Electric-field-independent spin-orbit- coupling gap in h-BN-encapsulated bilayer graphene

    Jing, F.-M.; Shen, Z.-X.; Qin, G.-Q.; Zhang, W.-K.; Lin, T.; Cai, R.; Zhang, Z.-Z.; Cao, G.; He, L.; Song, X.- X.; Guo, G.-P. Electric-field-independent spin-orbit- coupling gap in h-BN-encapsulated bilayer graphene. Phys. Rev. Appl.2025,23, 044053

    2025

  3. [10]

    Graphene on transition-metal dichalcogenides: A platform for proximity spin-orbit physics and optospintronics.Phys

    Gmitra, M.; Fabian, J. Graphene on transition-metal dichalcogenides: A platform for proximity spin-orbit physics and optospintronics.Phys. Rev. B2015,92, 155403

  4. [11]

    Trivial and inverted Dirac bands and the emergence of quantum spin Hall states in graphene on transition-metal dichalco- genides.Phys

    Gmitra, M.; Kochan, D.; H¨ ogl, P.; Fabian, J. Trivial and inverted Dirac bands and the emergence of quantum spin Hall states in graphene on transition-metal dichalco- genides.Phys. Rev. B2016,93, 155104

  5. [12]

    H.; Morpurgo, A

    Wang, Z.; Ki, D.-K.; Chen, H.; Berger, H.; MacDon- ald, A. H.; Morpurgo, A. F. Strong interface-induced spin–orbit interaction in graphene on WS 2.Nat. Com- mun.2015,6, 8339

    2015

  6. [13]

    Y.; Mauro, D.; Berger, H.; Levitov, L

    Wang, Z.; Ki, D.-K.; Khoo, J. Y.; Mauro, D.; Berger, H.; Levitov, L. S.; Morpurgo, A. F. Origin and Magnitude of `Designer’ Spin-Orbit Interaction in Graphene on Semi- conducting Transition Metal Dichalcogenides.Phys. Rev. X2016,6, 041020

  7. [14]

    Strong electron-hole symmetric Rashba spin-orbit cou- pling in graphene/monolayer transition metal dichalco- genide heterostructures.Phys

    Yang, B.; Lohmann, M.; Barroso, D.; Liao, I.; Lin, Z.; Liu, Y.; Bartels, L.; Watanabe, K.; Taniguchi, T.; Shi, J. Strong electron-hole symmetric Rashba spin-orbit cou- pling in graphene/monolayer transition metal dichalco- genide heterostructures.Phys. Rev. B2017,96, 041409

  8. [15]

    Magnetotransport in heterostructures of transition metal dichalcogenides and graphene.Phys

    V¨ olkl, T.; Rockinger, T.; Drienovsky, M.; Watanabe, K.; Taniguchi, T.; Weiss, D.; Eroms, J. Magnetotransport in heterostructures of transition metal dichalcogenides and graphene.Phys. Rev. B2017,96, 125405

  9. [16]

    W.; Garcia, J

    Zihlmann, S.; Cummings, A. W.; Garcia, J. H.; Kedves, M.; Watanabe, K.; Taniguchi, T.; Sch¨ onenberger, C.; Makk, P. Large spin relaxation anisotropy and valley-Zeeman spin-orbit coupling in WSe2/graphene/h-BN heterostructures.Phys. Rev. B 2018,97, 075434

    2018

  10. [17]

    Strong Anisotropic Spin-Orbit Interaction Induced in Graphene by Monolayer WS 2

    Wakamura, T.; Reale, F.; Palczynski, P.; Gu´ eron, S.; Mattevi, C.; Bouchiat, H. Strong Anisotropic Spin-Orbit Interaction Induced in Graphene by Monolayer WS 2. Phys. Rev. Lett.2018,120, 106802

    2018

  11. [18]

    The electronic properties of bilayer graphene.Reports on Progress in Physics2013, 76, 056503

    McCann, E.; Koshino, M. The electronic properties of bilayer graphene.Reports on Progress in Physics2013, 76, 056503

  12. [19]

    I.; Xin, N.; Taniguchi, T.; Watanabe, K.; Geim, A

    Slizovskiy, S.; Garcia-Ruiz, A.; Berdyugin, A. I.; Xin, N.; Taniguchi, T.; Watanabe, K.; Geim, A. K.; Drum- mond, N. D.; Fal’ko, V. I. Out-of-Plane Dielectric Suscep- tibility of Graphene in Twistronic and Bernal Bilayers. 7 Nano Lett.2021,21, 6678–6683

    2021

  13. [20]

    Transport Spectroscopy of Ultraclean Tunable Band Gaps in Bilayer Graphene.Adv

    Icking, E.; Banszerus, L.; W¨ ortche, F.; Volmer, F.; Schmidt, P.; Steiner, C.; Engels, S.; Hesselmann, J.; Goldsche, M.; Watanabe, K.; Taniguchi, T.; Volk, C.; Beschoten, B.; Stampfer, C. Transport Spectroscopy of Ultraclean Tunable Band Gaps in Bilayer Graphene.Adv. Electron...

    2022

  14. [21]

    F.; Levitov, L

    Young, A. F.; Levitov, L. S. Capacitance of graphene bilayer as a probe of layer-specific properties.Phys. Rev. B2011,84, 085441

  15. [22]

    Y.; Morpurgo, A

    Khoo, J. Y.; Morpurgo, A. F.; Levitov, L. On-Demand Spin–Orbit Interaction from Which-Layer Tunability in Bilayer Graphene.Nano Lett.2017,17, 7003–7008

    2017

  16. [23]

    Proximity Effects in Bilayer Graphene on Monolayer WSe 2: Field-Effect Spin Valley Locking, Spin-Orbit Valve, and Spin Transistor.Phys

    Gmitra, M.; Fabian, J. Proximity Effects in Bilayer Graphene on Monolayer WSe 2: Field-Effect Spin Valley Locking, Spin-Orbit Valve, and Spin Transistor.Phys. Rev. Lett.2017,119, 146401

    2017

  17. [24]

    N.; Bockrath, M

    Wang, D.; Che, S.; Cao, G.; Lyu, R.; Watanabe, K.; Taniguchi, T.; Lau, C. N.; Bockrath, M. Quantum Hall Effect Measurement of Spin–Orbit Coupling Strengths in Ultraclean Bilayer Graphene/WSe 2 Heterostructures. Nano Lett.2019,19, 7028–7034

    2019

  18. [25]

    Nanosecond Spin Lifetimes in Single- and Few-Layer Graphene–hBN Heterostructures at Room Temperature.Nano Lett.2014,14, 6050–6055

    Dr¨ ogeler, M.; Volmer, F.; Wolter, M.; Terr´ es, B.; Watan- abe, K.; Taniguchi, T.; G¨ untherodt, G.; Stampfer, C.; Beschoten, B. Nanosecond Spin Lifetimes in Single- and Few-Layer Graphene–hBN Heterostructures at Room Temperature.Nano Lett.2014,14, 6050–6055

    2014

  19. [26]

    Ingla-Ayn´ es, J.; Guimar˜ aes, M. H. D.; Meijerink, R. J.; Zomer, P. J.; van Wees, B. J. 24−µm spin relaxation length in boron nitride encapsulated bilayer graphene. Phys. Rev. B2015,92, 201410

  20. [27]

    CVD Bilayer Graphene Spin Valves with 26µm Spin Diffusion Length at Room Tempera- ture.Nano Lett.2022,22, 4949–4955

    Bisswanger, T.; Winter, Z.; Schmidt, A.; Volmer, F.; Watanabe, K.; Taniguchi, T.; Stampfer, C.; Beschoten, B. CVD Bilayer Graphene Spin Valves with 26µm Spin Diffusion Length at Room Tempera- ture.Nano Lett.2022,22, 4949–4955

    2022

  21. [28]

    Spin- Orbit-Mediated Spin Relaxation in Graphene.Phys

    Huertas-Hernando, D.; Guinea, F.; Brataas, A. Spin- Orbit-Mediated Spin Relaxation in Graphene.Phys. Rev. Lett.2009,103, 146801

    2009

  22. [29]

    Han, W.; Kawakami, R. K. Spin Relaxation in Single- Layer and Bilayer Graphene.Phys. Rev. Lett.2011,107, 047207

    2011

  23. [30]

    M.; Zhumagulov, Y.; Zollner, K.; Yoon, C.; Urbaniak, D.; Geisenhof, F

    Seiler, A. M.; Zhumagulov, Y.; Zollner, K.; Yoon, C.; Urbaniak, D.; Geisenhof, F. R.; Watanabe, K.; Taniguchi, T.; Fabian, J.; Zhang, F.; Weitz, R. T. Layer- selective spin-orbit coupling and strong correlation in bilayer graphene. 2024;http://arxiv.org/abs/2403. 17140, arXiv:...

    2024 arXiv

  24. [31]

    D.; Niese, M.; Taniguchi, T.; Watanabe, K.; Levitov, L.; Ihn, T.; Ensslin, K.; Duprez, H

    Masseroni, M.; Gull, M.; Panigrahi, A.; Jacob- sen, N.; Fischer, F.; Tong, C.; Gerber, J. D.; Niese, M.; Taniguchi, T.; Watanabe, K.; Levitov, L.; Ihn, T.; Ensslin, K.; Duprez, H. Spin-orbit proximity in MoS2/bilayer graphene heterostructures.Nat. Commun. 2024,15, 9251

    2024

  25. [32]

    T.; Allen, M

    Weitz, R. T.; Allen, M. T.; Feldman, B. E.; Martin, J.; Yacoby, A. Broken-Symmetry States in Doubly Gated Suspended Bilayer Graphene.Science2010,330, 812– 816

  26. [33]

    O.; Cui, X.; Lewandowski, C.; Khoo, J

    Island, J. O.; Cui, X.; Lewandowski, C.; Khoo, J. Y.; Spanton, E. M.; Zhou, H.; Rhodes, D.; Hone, J. C.; Taniguchi, T.; Watanabe, K.; Levitov, L. S.; Zale- tel, M. P.; Young, A. F. Spin–orbit-driven band inver- sion in bilayer graphene by the van der Waals proximity effect.Nat...

  27. [34]

    Gate-defined electron–hole double dots in bilayer graphene.Nano Let- ters2018,18, 4785–4790

    Banszerus, L.; Frohn, B.; Epping, A.; Neumaier, D.; Watanabe, K.; Taniguchi, T.; Stampfer, C. Gate-defined electron–hole double dots in bilayer graphene.Nano Let- ters2018,18, 4785–4790

  28. [35]

    Spin and Valley States in Gate-Defined Bilayer Graphene Quan- tum Dots.Phys

    Eich, M.; Herman, F.; Pisoni, R.; Overweg, H.; Kurz- mann, A.; Lee, Y.; Rickhaus, P.; Watanabe, K.; Taniguchi, T.; Sigrist, M.; Ihn, T.; Ensslin, K. Spin and Valley States in Gate-Defined Bilayer Graphene Quan- tum Dots.Phys. Rev. X2018,8, 031023

  29. [36]

    Electron–Hole Crossover in Gate-Controlled Bilayer Graphene Quantum Dots.Nano Lett.2020,20, 7709–7715

    Banszerus, L.; Rothstein, A.; Fabian, T.; M¨ oller, S.; Icking, E.; Trellenkamp, S.; Lentz, F.; Neumaier, D.; Watanabe, K.; Taniguchi, T.; Libisch, F.; Volk, C.; Stampfer, C. Electron–Hole Crossover in Gate-Controlled Bilayer Graphene Quantum Dots.Nano Lett.2020,20, 7709–7715

    2020

  30. [37]

    Excited States in Bilayer Graphene Quantum Dots.Physical Review Letters2019,123, 026803

    Kurzmann, A.; Eich, M.; Overweg, H.; Mangold, M.; Herman, F.; Rickhaus, P.; Pisoni, R.; Lee, Y.; Gar- reis, R.; Tong, C.; Watanabe, K.; Taniguchi, T.; En- sslin, K.; Ihn, T. Excited States in Bilayer Graphene Quantum Dots.Physical Review Letters2019,123, 026803

  31. [38]

    Quartet states in two-electron quantum dots in bilayer graphene.Phys

    Knothe, A.; Fal’ko, V. Quartet states in two-electron quantum dots in bilayer graphene.Phys. Rev. B2020, 101, 235423

  32. [39]

    Impact of competing energy scales on the shell-filling sequence in elliptic bilayer graphene quantum dots.Phys

    M¨ oller, S.; Banszerus, L.; Knothe, A.; Valerius, L.; Hecker, K.; Icking, E.; Watanabe, K.; Taniguchi, T.; Volk, C.; Stampfer, C. Impact of competing energy scales on the shell-filling sequence in elliptic bilayer graphene quantum dots.Phys. Rev. B2023,108, 125128

  33. [40]

    Particle–hole symmetry protects spin-valley blockade in graphene quantum dots.Nature2023,618, 51–56

    Banszerus, L.; M¨ oller, S.; Hecker, K.; Icking, E.; Watan- abe, K.; Taniguchi, T.; Hassler, F.; Volk, C.; Stampfer, C. Particle–hole symmetry protects spin-valley blockade in graphene quantum dots.Nature2023,618, 51–56

  34. [42]

    HNF - Helmholtz Nano Facility.Journal of Large-Scale Research Facilities 2017,3, 112

    Albrecht, W.; Moers, J.; Hermanns, B. HNF - Helmholtz Nano Facility.Journal of Large-Scale Research Facilities 2017,3, 112

    2017

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