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Fabrication and Electric Field Dependent Transport Measurements of Mesoscopic Graphite Devices

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arxiv cond-mat/0410314 v1 pith:C4PT6XU3 submitted 2004-10-13 cond-mat.mes-hall

classification cond-mat.mes-hall
keywords graphitedependentdevicesmeasurementssamplesconductanceelectricfield
verification ladder T0 review T1 audit T2 compute T3 formal
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abstract

We have developed a unique micromechanical method to extract extremely thin graphite samples. Graphite crystallites with thicknesses ranging from 10 - 100 nm and lateral size $\sim$ 2 $\mu$m are extracted from bulk. Mesoscopic graphite devices are fabricated from these samples for electric field dependent conductance measurements. Strong conductance modulation as a function of gate voltage is observed in the thinner crystallite devices. The temperature dependent resistivity measurements show more boundary scattering contribution in the thinner graphite samples.

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