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Spin dependent transport in ferromagnetic/superconductor/ferromagnetic single electron transistor

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arxiv cond-mat/0410351 v1 pith:D3RU7BCZ submitted 2004-10-14 cond-mat.mes-hall cond-mat.supr-con

Spin dependent transport in ferromagnetic/superconductor/ferromagnetic single electron transistor

Dawei Wang , Jia G. Lu This is my paper
classification cond-mat.mes-hall cond-mat.supr-con
keywords ferromagneticelectronleadssinglespintransportantiparallelcharacteristics
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Ferromagnetic single electron transistors with Al islands and orthogonal ferromagnetic leads (Co) are fabricated using ebeam lithography followed by shadow evaporation techniques. I-V characteristics exhibit typical single electron tunneling effects. Transport measurements performed in external magnetic field show that, when the two ferromagnetic leads are in antiparallel configuration, spin imbalance leads to a suppression of superconductivity.

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