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Measurement of finite-frequency current statistics in a single-electron transistor

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arxiv 1201.2163 v1 pith:P3P6L5EX submitted 2012-01-10 cond-mat.mes-hall

classification cond-mat.mes-hall
keywords currentfluctuationselectricaldetectionelectronfrequencyinteractionmeasured
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Electron transport in nano-scale structures is strongly influenced by the Coulomb interaction which gives rise to correlations in the stream of charges and leaves clear fingerprints in the fluctuations of the electrical current. A complete understanding of the underlying physical processes requires measurements of the electrical fluctuations on all time and frequency scales, but experiments have so far been restricted to fixed frequency ranges as broadband detection of current fluctuations is an inherently difficult experimental procedure. Here we demonstrate that the electrical fluctuations in a single electron transistor (SET) can be accurately measured on all relevant frequencies using a nearby quantum point contact for on-chip real-time detection of the current pulses in the SET. We have directly measured the frequency-dependent current statistics and hereby fully characterized the fundamental tunneling processes in the SET. Our experiment paves the way for future investigations of interaction and coherence induced correlation effects in quantum transport.

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    A single NV spin qubit and two-qubit coincidence or Bell-state echoes can isolate fourth-order magnetic noise cumulants, demonstrated on telegraph-noise and critical Ising models.

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